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| MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG600Q1US59A FEATURE The electrodes are isolated from case. Enhancement-mode Integrates fault-signal output circuit in package. (Short-Circuit and Over-Current) UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION General purpose inverters, servo drives and motor controls OUTLINE DRAWING & EQUIVALENT CIRCUIT Dimensions in mm 4-6.50.3 1180.8 1040.6 G JAPAN C C SEN SEN 110.6 110.6 470.6 540.6 680.8 C E 4-M6 C E 3-M4 E E E E G Equivalent Circuit 260.6 440.6 100.6 8.50.6 25.5 -1 1160.8 Weight: 420g 22.5 -1 20 660.8 3.50.5 +2 +2.3 -1 +2 Dec.2005 MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MAXIMUM RATINGS (Ta = 25C) Symbol VCES VGES VSES IC ICP IF IFM PC Tj Tstg Vlsol -- -- Parameter Collector-emitter voltage Gate-emitter voltage Sense-emitter voltage Collector DC current 1ms Forward DC current 1ms Collector power dissipation Junction temperature Storage temperature range Isolation voltage Screw Terminal (M4/M6) torque Mounting Conditions Ratings 1200 20 40 600 1200 600 1200 2750 150 -40 ~ 125 2500 (AC 1 minute) 2/3 3 Unit V V V A A W C C V N*m TC = 25C ELECTRICAL CHARACTERISTICS (Ta = 25C) Symbol IGES ICES VGE(off) VCE(sat) Cies td(on) tr ton td(off) tf toff VF trr ISES IC(SEN-START) VSEN Rth(j-c) Parameter Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching Turn-on time Turn-off delay time time Fall time Turn-off time Forward voltage Reverse recovery time Sense leakage current Sense Sense start current Sense voltage Thermal resistance Test conditions VGE = 20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 600mA, VCE = 5V IC = 600A, Tj = 25C VCE = 10V, VGE = 0, f = 1MHz Inductive load VCC = 600V IC = 600A VGE = 15V RG = 2 IF = 600A, VGE = 0 IF = 600A, VGE = -15V, di/dt = 300A/s VSEN - E = 40V, VCE = 0, VGE = 0 VGE = 15V, VSE = 14.8V VGE = 15V, IC = 2400A Transistor stage Diode stage Min. -- -- 4.0 -- -- -- -- -- -- -- -- -- -- -- 1050 -- -- -- Limits Typ. -- -- -- 2.5 100000 0.2 0.1 0.3 1.15 0.15 1.3 2.3 -- -- -- -- -- -- Max. 500 1.0 7.0 3.5 -- -- -- -- -- 0.3 -- 3.2 0.5 200 -- 13.2 0.045 0.125 Unit nA mA V V pF s (Note 1) (Note 1) (Note 2) (Note 2) V s nA A V C/W Dec.2005 MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Note 1: Switching time and reverse recovery time test circuit and timing chart Switching time test circuit Timing chart VGE 10% 90% RG -VGE IF VCC IC L Irr IC trr 90% Irr 20% Irr 90% RG 10% td(on) td(off) tf 10% Note 2: Sense start current and sense voltage test circuit Test circuit *Measurement in the complete charge period. Timing chart Complete charge period VGE IC Inductance 2400A IC(SEN-START) 15V 330 VSE IC VSE 14.8V 15V VSEN Dec.2005 MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Rank symbol 22 23 24 25 26 27 28 29 30 31 32 33 34 MIN. 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 MAX. 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 Rank symbol B C D E F G H I MIN. 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 MAX. 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 VCE(sat), VF Rank JAPAN C E C E E Serial No. MG600Q1US59 T52AA1 Lot No. G SEN 25F 000001 Dec.2005 MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS PERFORMANCE CURVES IC - VCE 1200 COLLECTOR CURRENT IC (A) IC - VCE 1200 COLLECTOR CURRENT IC (A) Common emitter Tj = 25C 15 12 10 Common emitter Tj = 125C 1000 800 600 400 15 12 10 1000 800 VGE = 20V 600 400 8 200 0 9 VGE = 20V 9 8 200 0 0 1 2 3 4 5 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - VGE COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - VGE COLLECTOR-EMITTER VOLTAGE VCE (V) 10 10 8 8 6 6 4 600A 2 Common emitter Tj = 25C 0 0 4 8 12 1200A 4 600A 2 Common emitter Tj = 125C 0 0 4 8 12 1200A IC = 300A IC = 300A 16 20 16 20 GATE-EMITTER VOLTAGE VGE (V) GATE-EMITTER VOLTAGE VGE (V) IC - VGE 1200 COLLECTOR CURRENT IC (A) IF - VF 1200 FORWARD CURRENT IF (A) Common emitter VCE = 5V Common cathode VGE = 0 1000 800 600 400 200 0 1000 800 600 400 200 0 125C Tj = 25C 125C Tj = 25C 0 2 4 6 8 10 12 0 0.5 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) FORWARD VOLTAGE VF (V) Dec.2005 MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS SW time - RG 104 7 5 3 2 SW time - IC 104 Tj = 25C Tj = 125C toff td(off) ton toff td(off) ton td(on) 7 5 SWITCHING TIME (ns) 103 7 5 3 2 SWITCHING TIME (ns) 3 2 103 7 5 3 2 td(on) 102 Common emitter 3 VCC = 600V 2 IC = 600A VGE = 15V 101 0 4 8 7 5 tr tf Tj = 25C Tj = 125C 12 16 102 7 5 3 2 tr Common emitter VCC = 600V RG = 2 VGE = 15V 300 400 500 600 tf 0 100 200 101 GATE RESISTANCE RG () COLLECTOR CURRENT IC (A) SW loss - RG 103 103 Eoff SW loss - IC Common emitter VCC = 600V 3 RG = 2 2 VGE = 15V Tj = 25C 102 Tj = 125C 7 7 5 5 3 2 SWITCHING LOSS Eon, Eoff (mJ) 3 2 SWITCHING LOSS Eon, Eoff (mJ) 7 5 Eoff 102 7 5 3 2 101 7 5 3 2 Eon 100 Common emitter VCC = 600V IC = 600A VGE = 15V Tj = 25C Tj = 125C 4 8 12 16 101 7 5 3 2 Eon 0 100 0 100 200 300 400 500 600 GATE RESISTANCE RG () COLLECTOR CURRENT IC (A) PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) 103 7 5 3 2 PEAK REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) Irr, trr - RG Irr, trr - IF 103 7 5 3 2 Irr Irr trr 102 7 5 3 2 102 7 5 3 2 trr Common emitter VCC = 600V RG = 2 VGE = 15V Tj = 25C Tj = 125C 0 100 200 300 400 500 600 101 Common emitter VCC = 600V IC = 600A VGE = 15V Tj = 25C Tj = 125C 0 4 8 12 16 101 GATE RESISTANCE RG () FORWARD CURRENT IF (A) Dec.2005 MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Edsw - RG REVERSE RECOVERY LOSS Edsw (mJ) REVERSE RECOVERY LOSS Edsw (mJ) Edsw - IF 102 7 5 3 2 102 7 5 3 2 101 7 5 3 2 101 7 5 3 2 100 Common emitter VCC = 600V IC = 600A VGE = 15V Tj = 25C Tj = 125C 0 4 8 12 16 100 Common emitter VCC = 600V RG = 2 VGE = 15V Tj = 25C Tj = 125C 0 100 200 300 400 500 600 GATE RESISTANCE RG () FORWARD CURRENT IF (A) VCE, VGE - QG COLLECTOR-EMITTER VOLTAGE VCE (V) C - VCE 20 GATE-EMITTER VOLTAGE VGE (V) 1000 106 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 CAPACITANCE C (pF) 800 VCE =0V 600 600 16 105 Cies 12 104 Coes 400 200 200 400 8 0 0 Common emitter 4 RL = 1 Tj = 25C 0 1000 2000 3000 4000 5000 6000 7000 CHARGE QG (nC) 103 VGE = 0V f = 1MHz TC = 25C 2 3 5 7 101 2 3 Cres 102 0 10 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Rth - tW 100 TRANSIENT THERMAL RESISTANCE Rth(j-c) (C/W) 7 TC = 25C 5 3 2 7 5 3 2 DIODE STAGE 10-1 10-2 7 5 3 2 TRANSISTOR STAGE 10-3 -3 10 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 PULSE WIDTH tW (s) Dec.2005 |
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