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BAT14...
Silicon Schottky Diode DBS mixer applications up to 12 GHz Low noise figure Low barrier type

1
BAT14-03W
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BAT14-03W Package SOD323 Configuration single LS(nH) Marking 1.8 O/white
Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol VR IF Ptot Tj Top Tstg Symbol RthJS Value Unit
Diode reverse voltage Forward current Total power dissipation Junction temperature Operating temperature range Storage temperature
Thermal Resistance Parameter TS
4 90 100 150 -55 ... 125 -55 ... 150
V mA mW C
85 C
1For
calculation of RthJA please refer to Application Note Thermal Resistance
1
Junction - soldering point1)
Value
Unit
690
K/W
Feb-03-2003
BAT14...
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 10 A Forward voltage IF = 1 mA IF = 10 mA
AC Characteristics Diode capacitance VR = 0 , f = 1 MHz IF = 10mA / 50mA Differential forward resistance CT RF 0.22 5.5 0.35 pF
Symbol min. V(BR) VF 0.36 0.48 4
Values typ. max. -
Unit
V
0.43 0.55
0.52 0.66
2
Feb-03-2003
BAT14...
Diode capacitance CT = f = 1MHz
0.5
pF
TA = Parameter
10 1
A
0.4 10 0.35
0
CT
0.3 0.25 0.2 0.15 0.1 0.05 0 0
V
IR
10 -1
10 -2
0.5
1
1.5
2
2.5
3
3.5
4
5
10 -3 1
1.5
2
2.5
3
VF
10
mA
2
10
1
IF
10
0
10
-1
10
-2
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Forward current IF =
(V F)
-40C 25C 85C 125C
V
1
VF
3
(VR )
Reverse current IR =
(VR)
TA =125C
TA =85C
TA =25C
3.5
4
4.5
V
5.5
VR
Feb-03-2003

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