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FLM1011-12F
X, Ku-Band Internally Matched FET FEATURES
* * * * * * * High Output Power: P1dB = 40.5dBm (Typ.) High Gain: G1dB = 6.0dB (Typ.) High PAE: add = 25% (Typ.) Low IM3 = -45dBc@Po = 29.5dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed
DESCRIPTION
The FLM1011-12F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C)
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25C Condition Rating 15 -5 57.6 -65 to +175 175 Unit V V W C C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with gate resistance of 50.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C)
Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IB Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G IM3 Rth Tch f = 11.7GHz, f = 10MHz 2-Tone Test Pout = 29.5 dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS = 10V f = 10.7 ~ 11.7 GHz IDS = 0.6 IDSS(Typ.) ZS = ZL = 50 Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 3600mA VDS = 5V, IDS = 300mA IGS = -340A Min. -0.5 -5 39.5 5.0 -42 Limit Typ. Max. 6000 5000 -1.5 40.5 6.0 3600 25 -45 2.3 9000 -3.0 4500 0.6 2.6 80 Unit mA mS V V dBm dB mA % dB dBc C/W C
G.C.P.: Gain Compression Point
Edition 1.3 August 2004
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FLM1011-12F
X, Ku-Band Internally Matched FET
POWER DERATING CURVE
OUTPUT POWER & IM3 vs. INPUT POWER
35
VDS=10V f1 = 11.7 GHz f2 = 11.71 GHz 2-tone test
Pout
Total Power Dissipation (W)
60
Output Power (S.C.L.) (dBc)
33 31 29
45
-20 -30
IM3
30
15
27
-40 -50
25
0 50 100 150 200
19
21
23
25
27
29
Case Temperature (C)
Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
VDS=10V,
40
OUTPUT POWER vs. INPUT POWER
41
P1dB
Pin=36dBm 34dBm 32dBm 30dBm 28dBm 26dBm 24dBm 22dBm 20dBm
39
VDS=10V f = 11.2 GHz
Output Power (dBm)
36 34 32 30 28
Output Power (dBm)
38
37 35 33 31 29 27 24 26 28 30 32 34
add
Pout
40 30 20 10
10.8
11.1
11.2
11.4
11.6
11.8
Frequency (GHz)
Input Power (dBm)
2
add (%)
IM3 (dBc)
FLM1011-12F
X, Ku-Band Internally Matched FET
+j50 +j100 +j25
10.5 GHz 10.7
+j10
11.9
10.9 11.1 11.3 10.5 GHz 250 10.7
+j250
0.1
SCALE FOR |S12|
S11 S22
+90
0.2
S21 S12
10.5 GHz 10.7 10.9 10.7 10.9 11.1
10.5 GHz
0
10
11.7
50
180 5
4
3
2
1
0
11.5 11.5 11.3 11.7 10.9 11.9 11.1
SCALE FOR |S21|
-j10
-j250
11.1 11.3 11.3 11.5 11.7 11.5 11.9 11.9 11.7
-j25 -j50
-j100 -90
FREQUENCY (MHZ)
10500 10600 10700 10800 10900 11000 11100 11200 11300 11400 11500 11600 11700 11800 11900
S11 MAG
.575 .549 .522 .487 .457 .421 .387 .355 .321 .292 .265 .240 .219 .205 .211
ANG
98.6 87.9 77.4 66.0 55.0 43.3 31.8 19.5 7.4 -5.8 -20.2 -37.0 -55.9 -78.7 -103.2
S-PARAMETERS VDS = 10V, IDS = 3600mA S21 S12 MAG ANG MAG ANG
2.142 2.158 2.223 2.316 2.337 2.326 2.263 2.257 2.282 2.302 2.269 2.247 2.235 2.204 2.117 44.3 36.2 28.8 18.9 8.9 -1.7 -11.0 -19.0 -27.7 -37.1 -47.2 -56.4 -66.2 -77.3 -87.2 .054 .065 .066 .074 .078 .083 .085 .086 .089 .092 .093 .092 .098 .097 .101 23.7 19.5 3.2 -1.4 -14.3 -19.7 -32.4 -38.8 -47.0 -55.5 -61.9 -70.6 -78.0 -86.7 -96.5
S22 MAG
.389 .362 .315 .278 .247 .222 .200 .180 .162 .148 .136 .136 .139 .137 .137
ANG
6.8 -3.3 -14.9 -29.5 -44.1 -61.7 -78.4 -98.7 -116.7 -137.7 -161.2 177.0 155.0 133.9 111.5
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FLM1011-12F
X, Ku-Band Internally Matched FET
Case Style "IB" Metal-Ceramic Hermetic Package
2.0 Min. (0.079) 2-R 1.60.15 (0.063) 1 2 0.1 (0.004) 3 0.6 (0.024) 2.0 Min. (0.079) 2.60.15 (0.102) 5.2 Max. (0.205) 10.7 (0.421) 0.2 Max. (0.008) 1.45 (0.059) 12.90.2 (0.508)
12.0 (0.422) 17.00.15 (0.669) 21.00.15 (0.827)
1. Gate 2. Source (Flange) 3. Drain
Unit: mm(inches)
For further information please contact:
CAUTION
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111
www.us.eudyna.com
* Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Eudyna Devices Europe Ltd.
Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd. Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921
Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
Eudyna Devices Inc.
Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170
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