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| NZT560/NZT560A NZT560/NZT560A NPN Low Saturation Transistor * These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. 3 2 1 4 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range NZT560/NZT560A 60 80 5 3 - 55 ~ +150 Units V V V A C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25C unless otherwise noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter IC = 10mA IC = 100A IE = 100A VCB = 30V VCB = 30V, TA = 100C VEB = 4V IC = 100mA, VCE = 2V IC = 500mA, VCE = 2V IC = 1A, VCE = 2V IC = 3A, VCE = 2V VCE(sat) Collector-Emitter Saturation Voltage IC = 1A, IB = 100mA IC = 3A, IB = 300mA IC = 1A, IB = 100mA IC = 1A, VCE = 2V VCB = 10V, IE = 0, f = 1MHz IC = 100mA, VCE = 5V, f = 100MHz 75 NZT560 NZT560A 70 100 250 80 25 Test Conditions Min. 60 80 5 100 10 100 Typ. Max. Units V V V V nA A nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain On Characteristics * NZT560 NZT560A 300 550 300 450 400 1.25 1 30 mV mV mV V V pF MHz VBE(sat) VBE(on) Cobo fT Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Transition Frequency Small Signal Characteristics * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2003 Fairchild Semiconductor Corporation Rev. C3, January 2003 NZT560/NZT560A Thermal Characteristics TA=25C unless otherwise noted Symbol PD RJA Parameter Total Device Dissipation Thermal Resistance, Junction to Ambient Max. NZT560 1 125 NZT560A Units W C/W (c)2003 Fairchild Semiconductor Corporation Rev. C3, January 2003 NZT560/NZT560A Typical Characteristics = 10 VBESAT-BASE-EMITTER SATURATION VOLTAGE(V) = 10 VBEON- BASE-EMITTER ON VOLTAGE (V) = 10 1.4 1.2 = 10 = 10 1.4 Vce = 2.0V 1.2 1 - 40 C 1 - 40 C 0.8 0.6 0.4 0.2 0.001 25 C 0.8 0.6 0.4 0.2 0.0001 25 C 125 C 125 C 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 Figure 1. Base-Emitter Saturation Voltage vs Collector Current VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Figure 2. Base-Emitter On Voltag vs Collector Current = 10 0.8 450 400 CAPACITANCE (pf) 350 300 250 200 150 100 50 C obo C ibo = 10 = 10 = 10 = 10 25C f = 1.0 MHz 0.6 125C 0.4 - 40C 0.2 0 0.001 0.01 0.1 1 (mA) I C- COLLECTOR CURRENT (mA) 10 0 0.1 0.2 0.5 1 2 5 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 Figure 3. Collector-Emitter Saturation Voltage vs Collector Current Figure 4. Input/Output Capacitance vs Reverse Bias Voltage 700 600 Vce = 2.0V hFE - CURRENT GAIN H FE 125C 500 400 25C 300 - 40C 200 100 0 0 0.5 1 1.5 2 2.5 3 I C - COLLECTOR CURRENT (mA) 3.5 Figure 5. Current Gain vs Collector Current (c)2003 Fairchild Semiconductor Corporation Rev. C3, January 2003 NZT560/NZT560A Package Dimensions SOT-223 0.08MAX 3.00 0.10 MAX1.80 1.75 0.20 3.50 0.20 (0.60) 0.65 0.20 +0.04 0.06 -0.02 2.30 TYP (0.95) 4.60 0.25 0.70 0.10 (0.95) +0.10 0.25 -0.05 (0.60) 0~ 10 1.60 0.20 (0.46) (0.89) 6.50 0.20 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. C3, January 2003 7.00 0.30 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I1 |
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