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| MCC Features * * * * omponents 21201 Itasca Street Chatsworth !"# $ % !"# MPSA13 MPSA14 Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC NPN Silicon Darlington Transistor TO-92 A E Pin Configuration Bottom View C B E Maximum Ratings Symbol V CES V CBO V EBO IC PD PD TJ TSTG Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Total Device Dissipation @T =25OC A Derate above 25OC Total Device Dissipation @T =25OC A Derate above 25OC Junction Temperature Storage Temperature Parameter Collector-Emitter Breakdown Voltage (IC=100uAdc, IB =0) Collector Cutoff Current (VCB=30Vdc, IE =0) Emitter Cutoff Current (V EB =10Vdc, IC=0) DC Current Gain (IC=10mAdc, V CE=5.0Vdc) Rating 30 30 10 500 625 5.0 1.5 12 -55 to +150 -55 to +150 Min 30 100 100 Max Unit V V V mA mW mW/ OC W mW/ OC O C O C Units Vdc nAdc nAdc B C Electrical Characteristics @ 25OC Unless Otherwise Specified OFF CHARACTERISTICS V(BR)CES ICBO IEBO D ON CHARACTERISTICS(1) hFE(1) MPSA13 MPSA14 5000 10000 10000 20000 1.5 2.0 Vdc Vdc G DIMENSIONS INCHES MIN .175 .175 .500 .016 .135 .095 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 hFE(2) VCE(sat) VBE(on) DC Current Gain (IC=100mAdc, V CE=5.0Vdc) MPSA 13 MPSA14 Collector-Emitter Saturation Voltage (IC=100mAdc, IB =0.1mAdc) Base-Emitter Saturation Voltage (IC=100mAdc, V CE=5.0Vdc) DIM A B C D E G MAX .185 .185 --.020 .145 .105 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE SMALL-SIGNAL CHARACTERISTICS fT 1. Current-Gain - Bandwidth Product (2) (IC=10mAdc, V CE=5.0Vdc, f=100MHz) Pulse Test: Pulse Width<300us, Duty Cycle<2.0% f T =|hfe| x ftest 125 MHz 2. www.mccsemi.com MPSA13 thru MPSA14 MCC RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 500 200 100 BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 BANDWIDTH = 1.0 Hz en, NOISE VOLTAGE (nV) IC = 1.0 mA 10 A 50 100 A 20 10 5.0 10 20 50 100 200 IC = 1.0 mA 100 A 10 A 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k Figure 2. Noise Voltage Figure 3. Noise Current VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) 200 BANDWIDTH = 10 Hz TO 15.7 kHz NF, NOISE FIGURE (dB) IC = 10 A 14 12 10 8.0 6.0 4.0 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 1000 0 1.0 2.0 5.0 IC = 1.0 mA 100 A BANDWIDTH = 10 Hz TO 15.7 kHz 100 70 50 30 20 10 A 100 A 1.0 mA 10 1.0 2.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 1000 Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure www.mccsemi.com MPSA13 thru MPSA14 20 TJ = 25C |h fe |, SMALL-SIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C MCC 2.0 C, CAPACITANCE (pF) 10 7.0 5.0 Cibo Cobo 1.0 0.8 0.6 0.4 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 40 0.2 0.5 1.0 2.0 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 6. Capacitance Figure 7. High Frequency Current Gain TJ = 125C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 k 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 3.0 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0.1 0.2 IC = 10 mA 50 mA 250 mA 500 mA hFE, DC CURRENT GAIN 25C -55C VCE = 5.0 V 500 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) 500 1000 Figure 8. DC Current Gain Figure 9. Collector Saturation Region RV, TEMPERATURE COEFFICIENTS (mV/C) 1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 0.8 0.6 -1.0 -2.0 -3.0 *APPLIES FOR IC/IB hFE/3.0 *RqVC FOR VCE(sat) 25C TO 125C -55C TO 25C 25C TO 125C -4.0 qVB FOR VBE -5.0 -6.0 5.0 7.0 10 -55C TO 25C VCE(sat) @ IC/IB = 1000 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 Figure 10. "On" Voltages Figure 11. Temperature Coefficients www.mccsemi.com MPSA13 thru MPSA14 MCC r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.05 SINGLE PULSE SINGLE PULSE ZJC(t) = r(t) * RJC TJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25C TC = 25C 1.0 ms 100 s 1.0 s FIGURE A tP PP PP t1 1/f 40 t DUTY CYCLE + t1 f + 1 tP PEAK PULSE POWER = PP 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data www.mccsemi.com |
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