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IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 2.41 (0.095) 0.127 (0.005) 3.175 (0.125) Max. P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 3.05 (0.120) 1 3 10.16 (0.400) 5.72 (.225) 2 -100V -11A 0.30 0.76 (0.030) min. 0.127 (0.005) 16 PLCS 0.50(0.020) 7.26 (0.286) 0.127 (0.005) 0.50 (0.020) max. * HERMETICALLY SEALED * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT * SCREENING OPTIONS AVAILABLE SMD05 (TO-276AA) IRF9130SMD05 PAD1 = GATE PAD 2 DRAIN PAD3 = SOURCE * ALL LEADS ISOLATED FROM CASE IRFNJ9130 PAD1 = SOURCE PAD 2 = DRAIN PAD3 = GATE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RJC Gate - Source Voltage Continuous Drain Current @ Tcase = 25C Continuous Drain Current @ Tcase = 100C Pulsed Drain Current Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case 20V -11A -7A -50A 45W 0.36W/C -55 to 150C 2.8C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Document Number 5544 Issue 1 IRFNJ9130 IRF9130SMD05 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS = -11A VGS = 0 IS = -11A TJ = 25C di / dt -100A/s VDD 150V TJ = 25C Test Conditions VGS = 0 ID = -1mA VGS = -10V VGS = -10V VDS = VGS VDS -15V VGS = 0 VGS = -20V VGS = 20V VGS = 0 VDS = 25V f = 1MHz VGS = -10V VDS = -50V ID = -11A VDD = -50V ID = -11A RG = 7.5 ID = -7A ID = -11A ID = -250A IDS = -7A VDS = -80V TJ = 125C ID = -1mA Min. -100 Typ. Max. Unit V BVDSS Temperature Coefficient of Reference to 25C -0.1 0.30 0.35 -2 3 -25 -250 -100 100 860 350 125 29 7.1 21 60 140 140 140 -11 -50 -4.7 250 3 -4 V / C V S( A nA )( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr pF nC ns A V ns C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk Document Number 5544 Issue 1 |
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