 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| x P-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.45 MAX x Ultra High-Speed Switching x SOT-89 Package s Applications q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s General Description The XP162A02D5PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-89 package makes high density mounting possible. s Features Low on-state resistance: Rds(on)=0.45(Vgs=-4.5V) Rds(on)=0.8(Vgs=-2.5V) Ultra high-speed switching Operational Voltage: -2.5V High density mounting: SOT-89 u s Pin Configuration s Pin Assignment PIN NUMBER 1 2 3 1 G 2 D 3 S PIN NAME G D S FUNCTION Gate Drain Source SOT-89 (TOP VIEW) s Equivalent Circuit s Absolute Maximum Ratings PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 12 -1.5 -4.5 -1.5 2 150 -55~150 Ta=25: UNITS V V A A A W : : 1 2 3 Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature P-Channel MOS FET (1 device built-in) Note: When implemented on a glass epoxy PCB s Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=-20V, Vgs=0V Vgs=12V, Vds=0V Id=-1mA, Vds=-10V Id=-0.8A, Vgs=-4.5V Id=-0.8A, Vgs=-2.5V Id=-0.8A, Vds=-10V If=-1.5A, Vgs=0V MIN TYP MAX -10 1 -0.5 0.35 0.6 1.5 -1.1 -1.2 0.45 0.8 UNITS A A V S V Dynamic characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=-10V, Vgs=0V f=1MHz MIN TYP 180 100 35 MAX Ta=25: UNITS pF pF pF u Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=-5V, Id=-0.8A Vdd=-10V CONDITIONS MIN TYP 10 15 20 30 MAX Ta=25: UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance (channel-surroundings) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS C/W Drain Current vs. Drain /Source Voltage Pulse Test, Ta=25: Drain Current vs. Gate/Source Voltage Drain Current:Id (A) Drain Current:Id (A) Drain/Source Voltage:Vds (V) Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance vs. Gate/Source Voltage Pulse Test, Ta=25: Drain/Source On-State Resistance vs. Drain Current Pulse Test, Ta=25: u Drain /Source On-State Resistance :Rds (on) () Drain/Source On-State Resistance :Rds (on) () Gate/Source Voltage:Vgs (V) Drain Current:Id (A) Drain/Source On-State Resistance vs. Ambient Temp. Pulse Test Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Vds=-10V, Id=-1mA Ambient Temperature:Topr (:) Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V) Drain/Source On-State Resistance :Rds (on) () Ambient Temperature:Topr (:) Drain/Source Voltage vs. Capacitance Vgs=0V, f=1MHz Switching Time vs. Drain Current Vgs=-5V, Vdd -10V, PW=10sec. duty 1% Capacitance:Ciss, Coss, Crss (pF) Drain/Source Voltage:Vds (V) Switching Time:t (ns) Drain Current:Id (A) Gate/Source Voltage vs. Gate Charge Vds=-10V, Id=-0.8A Reverse Drain Current vs. Source/Drain Voltage Pulse Test Reverse Drain Current:Idr (A) Gate/Source Voltage:Vgs (V) u Gate Charge:Qg (nc) Source/Drain Voltage:Vsd (V) Standardized Transition Thermal Resistance vs. Pulse Width Rth (ch-a)=62.5C/W, (Implemented on a glass epoxy PCB) Single Pulse Pulse Width:PW (sec) P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.28 (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP162A11COPR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.15 ( Vgs = -10V ) Rds (on) = 0.28 ( Vgs = -4.5V ) Ultra high-speed switching Operational Voltage : -4.5V Gate protect diode built-in High density mounting : SOT - 89 Pin Configuration Pin Assignment PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source u 1 G 2 D 3 S SOT - 89 Top View Equivalent Circuit Absolute Maximum Ratings Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -30 + 20 -2.5 -10 -2.5 2 150 -55 to 150 UNITS V V A A A W O 1 2 P - Channel MOS FET ( 1 device built-in ) 3 Channel Temperature Storage Temperature C C O ( note ) : When implemented on a ceramic PCB Electrical Characteristics DC characteristics Ta=25C PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 30 , Vgs = 0V Vgs = 20 , Vds = 0V Id = -1mA , Vds = - 10V Id = - 1.5A , Vgs = - 10V Id = - 1.5A , Vgs = - 4.5V Id = - 1.5A , Vds = - 10V If = - 2.5A , Vgs = 0V - 1.0 0.11 0.2 2.5 - 0.85 - 1.1 MIN TYP MAX - 10 10 - 2.5 0.15 0.28 UNITS A A V S V Dynamic characteristics Ta=25C PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds = - 10V , Vgs = 0V f = 1 MHz CONDITIONS MIN TYP 280 200 90 MAX UNITS pF pF pF u Switching characteristics Ta=25C PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 1.5A Vdd = - 10V CONDITIONS MIN TYP 10 30 20 35 MAX UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a ceramic PCB MIN TYP 62.5 MAX UNITS C / W Electrical Characteristics Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Drain Current u Drain/Source On-State Resistance vs. Ambient Temp Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Electrical Characteristics Drain/Source Voltage vs. Capacitance Switching Time vs. Drain Current Gate/Source Voltage vs. Gate Charge Reverse Drain Current vs. Source/Drain Voltage u Standardized Transition Thermal Resistance vs. Pulse Width P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.17 (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP162A12A6PR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-89 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.17 ( Vgs = -4.5V ) Rds (on) = 0.3 ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V Gate protect diode built-in High density mounting : SOT - 89 u Pin Configuration Pin Assignment PIN NUMBER 1 2 3 PIN NAME G D S FUNCTION Gate Drain Source 1 G 2 D 3 S SOT - 89 Top View Equivalent Circuit Absolute Maximum Ratings Ta=25 C O PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 + 12 -2.5 -10 -2.5 2 150 -55 to 150 UNITS V V A A A W C C 1 2 P - Channel MOS FET ( 1 device built-in ) 3 Channel Temperature Storage Temperature O O ( note ) : When implemented on a ceramic PCB Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 20 , Vgs = 0V Vgs = 12 , Vds = 0V Id = -1mA , Vds = - 10V Id = - 1.5A , Vgs = - 4.5V Id = - 1.5A , Vgs = - 2.5V Id = - 1.5A , Vds = - 10V If = - 2.5A , Vgs = 0V - 0.5 0.13 0.22 4 - 0.85 - 1.1 MIN TYP MAX - 10 10 - 1.2 0.17 0.3 Ta=25C UNITS A A V S V Dynamic characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds = - 10V , Vgs = 0V f = 1 MHz CONDITIONS MIN TYP 310 200 90 MAX Ta=25C UNITS pF pF pF u Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 1.5A Vdd = - 10V CONDITIONS MIN TYP 5 15 55 55 MAX Ta=25C UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a ceramic PCB MIN TYP 62.5 MAX UNITS C / W Electrical Characteristics Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Drain Current u Drain/Source On-State Resistance vs. Ambient Temp. Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Electrical Characteristics Capacitance vs. Drain/Source Voltage Switching Time vs. Drain Current Gate/Source Voltage vs. Gate Charge Reverse Drain Current vs. Source/Drain Voltage u Standardized Transition Thermal Resistance vs. Pulse Width Single Pulse |
Price & Availability of TOR070
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |