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| DISCRETE SEMICONDUCTORS DATA SHEET BF861A; BF861B; BF861C N-channel junction FETs Product specification Supersedes data of 1995 Apr 14 File under Discrete Semiconductors, SC07 1997 Sep 04 Philips Semiconductors Product specification N-channel junction FETs FEATURES * High transfer admittance * Low input capacitance * Low feedback capacitance * Low noise. APPLICATIONS * Preamplifiers for AM tuners in car radios. DESCRIPTION N-channel symmetrical junction field effect transistors in a SOT23 package. PINNING - SOT23 PIN 1 2 3 SYMBOL s d g drain gate DESCRIPTION source BF861A; BF861B; BF861C handbook, halfpage 2 1 g d s 3 Top view MAM036 Marking codes: BF861A: M33. BF861B: M34. BF861C: M35. Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS IDSS PARAMETER drain-source voltage (DC) drain current BF861A BF861B BF861C Ptot yfs total power dissipation forward transfer admittance BF861A BF861B BF861C Ciss Crss input capacitance reverse transfer capacitance f = 1 MHz f = 1 MHz up to Tamb = 25 C VGS = 0; VDS = 8 V 12 16 20 - - 20 25 30 10 2.7 mS mS mS pF pF VGS = 0; VDS = 8 V 2 6 12 - 6.5 15 25 250 mA mA mA mW CONDITIONS - MIN. MAX. 25 V UNIT 1997 Sep 04 2 Philips Semiconductors Product specification N-channel junction FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VDGO IG Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER drain-source voltage (DC) gate-source voltage drain-gate voltage (DC) forward gate current (DC) total power dissipation storage temperature operating junction temperature open drain open source BF861A; BF861B; BF861C CONDITIONS - - - - up to Tamb = 25 C; note 1 - MIN. MAX. 25 25 25 10 250 +150 150 V V V UNIT mA mW C C -65 - 300 P tot (mW) MRC166 200 100 00 50 100 Tamb ( oC) 150 Fig.2 Power derating curve. 1997 Sep 04 3 Philips Semiconductors Product specification N-channel junction FETs THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 C; VDS = 8 V; VGS = 0; unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source cut-off voltage BF861A BF861B BF861C VGSS IDSS gate-source forward voltage drain current BF861A BF861B BF861C IGSS yfs gate cut-off current forward transfer admittance BF861A BF861B BF861C gos common source output conductance BF861A BF861B BF861C Ciss Crss Vn/B input capacitance reverse transfer capacitance equivalent input noise voltage f = 1 MHz f = 1 MHz VGS = 0; f = 1 MHz VGS = -20 V; VDS = 0 VDS = 0; IG = 1 mA CONDITIONS ID = 1 A PARAMETER thermal resistance from junction to ambient; note 1 BF861A; BF861B; BF861C VALUE 500 UNIT K/W MIN. -25 -0.2 -0.5 -0.8 - 2 6 12 - 12 16 20 - - - - - - - - - - - - TYP. - MAX. V V V V V UNIT gate-source breakdown voltage IG = -1 A -1 -1.5 -2 1 6.5 15 25 -1 20 25 30 mA mA mA nA mS mS mS - - - - - - - - - - 2.1 1.5 200 250 300 10 2.7 - S S S pF pF nV/Hz 1997 Sep 04 4 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C 30 I DSS (mA) 20 MBD461 handbook, halfpage 300 MBD462 gos (S) 200 10 100 0 0 0.5 1 1.5 2 V GSoff (V) 0 0 5 10 15 20 I DSS (mA) 25 VDS = 8 V. VDS = 8 V. VGS = 0. Fig.3 Drain current as a function of gate-source cut-off voltage; typical values. Fig.4 Common-source output conductance as a function of drain current; typical values. handbook, halfpage 30 MBD463 MBD464 handbook, halfpage 25 y fs (mS) 20 y fs (mS) 20 BF861C BF861B BF861A 15 10 10 5 0 0 5 10 15 20 I DSS (mA) 25 0 0 5 10 15 I D (mA) 20 VDS = 8 V. VGS = 0. VDS = 8 V. Fig.5 Forward transfer admittance as a function of drain current; typical values. Fig.6 Forward transfer admittance as a function of drain current; typical values. 1997 Sep 04 5 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C MBD465 MBD466 handbook, halfpage 5 ID (mA) handbook, halfpage 5 ID (mA) V GS = 0 V 4 4 3 3 100 mV 2 2 200 mV 1 1 300 mV 0 1 0.8 0.6 0.4 0.2 0 VGS (V) 0 0 2 4 6 8 10 V DS (V) BF861A VDS = 8 V. BF861A VDS = 8 V. Fig.7 Typical input characteristics. Fig.8 Typical output characteristics. MBD467 MBD468 handbook, halfpage 10 ID (mA) handbook, halfpage 10 ID (mA) 8 8 V GS = 0 V 6 6 100 mV 200 mV 4 4 300 mV 2 2 400 mV 500 mV 0 1 0.8 0.6 0.4 0.2 0 VGS (V) 0 0 2 4 6 8 10 V DS (V) BF861B VDS = 8 V. BF861B VDS = 8 V. Fig.9 Typical input characteristics. Fig.10 Typical output characteristics. 1997 Sep 04 6 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C MBD469 MBD470 handbook, halfpage 20 ID (mA) handbook, halfpage 20 ID (mA) V GS = 0 V 200 mV 400 mV 16 16 12 12 600 mV 800 mV 8 8 1V 4 4 0 2.5 2 1.5 1 0.5 0 VGS (V) 0 0 2 4 6 8 10 V DS (V) BF861C VDS = 8 V. BF861C VDS = 8 V. Fig.11 Typical input characteristics. Fig.12 Typical output characteristics. handbook, halfpage 10 MBD471 Cis ,C rs (pF) 8 10 2 handbook, halfpage I D = 10 mA IG (nA) 1 10 MBD472 1 mA 0.1 mA 6 C is 10 1 10 2 10 3 10 4 I GSS 4 C rs 2 0 8 6 4 2 VGS (V) 0 10 5 0 5 10 15 20 25 VDG (V) VDS = 8 V. f = 1 MHz. VDS = 8 V. Fig.13 Input and reverse transfer capacitance as functions of gate-source voltage; typical values. Fig.14 Gate current as a function of drain-gate voltage; typical values. 1997 Sep 04 7 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C handbook, halfpage 8 MBD473 10 2 g is,b is (mS) MBD474 Vn/ B (nV/ Hz) 6 10 b is 4 g is 1 2 0 10 2 10 1 1 10 10 2 10 3 f (kHz) 10 1 10 10 2 f (MHz) 10 3 VDS = 8 V. VGS = 0. VDS = 8 V. VGS = 0. Tamb = 25 C. Fig.15 Equivalent input noise as a function of frequency; typical values. Fig.16 Common-source input admittance; typical values. 10 2 handbook, halfpage grs,b rs (mS) 10 MBD475 10 2 handbook, halfpage MBD476 gfs ,b fs (mS) g fs 1 b rs 10 10 1 g rs b fs 10 2 10 1 10 2 f (MHz) 10 3 10 10 2 f (MHz) 10 3 VDS = 8 V. VGS = 0. Tamb = 25 C. VDS = 8 V. VGS = 0. Tamb = 25 C. Fig.17 Common-source reverse admittance; typical values. Fig.18 Common-source forward transfer admittance; typical values. 1997 Sep 04 8 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C 10 2 g os,bos (mS) MBD477 10 b os 1 g os 10 1 10 10 2 f (MHz) 10 3 VDS = 8 V. VGS = 0. Tamb = 25 C. Fig.19 Common-source output admittance; typical values. 1997 Sep 04 9 Philips Semiconductors Product specification N-channel junction FETs PACKAGE OUTLINE BF861A; BF861B; BF861C handbook, full pagewidth 3.0 2.8 0.150 0.090 1.9 0.95 2 0.1 max 10 o max 3 1.1 max 30 o max 0.48 0.38 TOP VIEW 0.1 M A B 1 B A 0.2 M A 0.55 0.45 10 o max 1.4 1.2 2.5 max MBC846 Dimensions in mm. Fig.20 SOT23. 1997 Sep 04 10 Philips Semiconductors Product specification N-channel junction FETs DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BF861A; BF861B; BF861C This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Sep 04 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997 Internet: http://www.semiconductors.philips.com SCA55 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 117067/00/03/pp12 Date of release: 1997 Sep 04 Document order number: 9397 750 02667 |
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