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BCX41, BSS64
NPN Silicon AF and Switching Transistors For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX42, BSS63 (PNP)
3
Type BCX41 BSS64 Maximum Ratings Parameter
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 C Junction temperature Storage temperature
Thermal Resistance Junction - soldering point 1) RthJS

2 1
VPS05161
Marking EKs AMs 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SOT23 SOT23
Symbol
VCEO VCBO VEBO
BSS64 80 120 5
800 1 100 200 330 150
BCX41 125 125 5
Unit V
IC ICM IB IBM Ptot Tj Tstg
mA A mA mW C
-65 ... 150
215
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Aug-20-2001
BCX41, BSS64
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 VCB = 100 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 C VCB = 100 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 4 V, IC = 0 Collector cutoff current VCE = 100 V, TA = 85 C VCE = 100 V, TA = 125 C DC current gain 1) IC = 100 A, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 4 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 20 mA, VCE = 1 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V BCX41 BSS64 BSS64 BSS64 BSS64 BCX41 BCX41 BCX41 BCX41 hFE 25 20 63 40 60 80 80 55 ICEO 10 75 BSS64 BCX41 IEBO BSS64 BCX41 ICBO 20 20 100 ICBO 100 100 BSS64 BCX41 V(BR)EBO BSS64 BCX41 V(BR)CBO 120 125 5 V(BR)CEO 80 125 typ. max.
Unit
V
nA
A
nA A
-
1) Pulse test: t 300s, D = 2%
2
Aug-20-2001
BCX41, BSS64
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter saturation voltage1) IC = 300 mA, IB = 30 mA IC = 4 mA, IB = 0.4 mA IC = 50 mA, IB = 15 mA Base-emitter saturation voltage 1) IC = 300 mA, IB = 30 mA AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 12 fT 100 BCX41 BCX41 BSS64 BSS64 VBEsat VCEsat 0.9 0.7 3 1.4 typ. max.
Unit
V
MHz pF
3
Aug-20-2001
BCX41, BSS64
Total power dissipation Ptot = f(TS)
Collector current I C = f (VBE)
VCE = 1V
10 3 mA
BCX 41/BSS 64 EHP00421
360
mW
300 270
C
10 2 5
TA = 150 C 25 C -50 C
P tot
240 210 180 150 120 90 60 30 0 0
10 1 5
10 5
0
10 -1
15 30 45 60 75 90 105 120
C 150 TS
0
1
2
V VBE
3
Permissible pulse load
Ptotmax / PtotDC = f (tp )
10 3 Ptot max 5 Ptot DC
BCX 41/BSS 64 EHP00422
Transition frequency fT = f (IC)
VCE = 5V
10 3 MHz
T
BCX 41/BSS 64 EHP00423
tp D= T
tp
fT
5
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
5
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
10 1 10 0
5 10 1
5
10 2
mA
10 3
C
4
Aug-20-2001
BCX41, BSS64
Base-emitter saturation voltage
IC = f (VBEsat ), hFE = 10
10 3 mA
BCX 41/BSS 64 EHP00424
Collector-emitter saturation voltage
IC = f (VCEsat), h FE = 10
10 mA
3 BCX 41/BSS 64 EHP00425
C
10 2 5
150 C 25 C -50 C
C
10 5
2
150 C 25 C -50 C
10 1 5
10 5
1
10 5
0
10 5
0
10 -1
10 -1
0
1
2
V VBE sat
3
0
200
400
600 mV 800 VCE sat
Collector cutoff current ICBO = f (TA)
VCB = 80V
10 4 nA
BCX 41/BSS 64 EHP00426
DC current gain hFE = f (I C)
VCE = 1V
10 3
BCX 41/BSS 64 EHP00427
CB0
10 3 5 10 2 5 10 1 5 10
0
max
h FE
5
150 C 25 C -50 C 10 2
typ
5
5 10 -1
10 1 10 -1
0
50
100
C TA
150
5 10 0
5 10 1
5 10 2
mA 10 3
C
5
Aug-20-2001

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