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| Silicon NPN Transistor Da t a S h e e t 2N2060 Description Semicoa Semiconductors offers: Screening and processing per MIL-PRF-19500 Appendix E JAN level (2N2060J) JANTX level (2N2060JX) JANTXV level (2N2060JV) QCI to the applicable level 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV Radiation testing (total dose) upon request Applications Matched, Dual Transistors Low power NPN silicon transistor Features Benefits Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Collector-Emitter Voltage Collector-Base Voltage Parameter Symbol VCEO VCBO Hermetically sealed TO-77 metal can Also available in chip configuration Chip geometry 0410 Reference document: MIL-PRF-19500/270 Qualification Levels: JAN, JANTX, and JANTXV Radiation testing available TC = 25 C unless otherwise specified Rating 60 100 Volts Volts Volts mA mW mW mW/ C mW/ C W W mW/ C mW/ C C Unit Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25 C Derate linearly above 25 C Power Dissipation, TC = 25 C Derate linearly above 25 C Operating Junction Temperature Storage Temperature Copyright Rev. G 2002 VEBO IC PT PT TJ TSTG Semicoa Semiconductors, Inc. 7 500 540 one section 600 both sections 3.08 one section 3.48 both sections 1.5 one section 2.12 both sections 8.6 one section 12.1 both sections -65 to +200 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 1 Silicon NPN Transistor Da t a S h e e t 2N2060 ELECTRICAL CHARACTERISTICS Off Characteristics Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current On Characteristics Parameter Symbol hFE1 hFE2 hFE3 hFE4 hFE5 |VBE1 - VBE2|1 |VBE1 - VBE2|2 |VBE1 - VBE2|1 |VBE1 - VBE2|2 Test Conditions IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 mA, VCE = 5 Volts IC = 100 A, VCE = 5 Volts TA = -55 C VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 1 mA VCE = 5 Volts, IC = 100 A TA = 25 C and -55 C VCE = 5 Volts, IC = 1 mA TA = 25 C and +125 C Symbol V(BR)CEO V(BR)CER ICBO1 ICBO2 ICBO3 ICEO ICEX ICES IEBO1 IEBO2 Test Conditions IC = 30 mA IC = 10 mA, RBE = 10 VCB = 100 Volts VCB = 80 Volts VCB = 80 Volts, TA = 150 C VCE = xx Volts VCE = xx Volts, VEB = x Volts VCE = xx Volts VEB = 7 Volts VEB = 5 Volts Min 60 80 characteristics specified at TA = 25 C Typ Max Units Volts Volts A nA A A A nA 10 2 10 10 2 Pulse Test: Pulse Width = 300 s, Duty Cycle A nA 2.0% Min 25 30 40 50 10 Typ Max 75 90 120 150 Units DC Current Gain Base-Emitter Voltage Differential Base-Emitter Voltage Differential change with temperature 5 .8 1 mVolts mVolts Copyright Rev. G 2002 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Semicoa Semiconductors, Inc. www.SEMICOA.com Page 2 of 2 Silicon NPN Transistor Da t a S h e e t Dynamic Characteristics Parameter Magnitude Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Open Circuit Output Capacitance Open Circuit Input Capacitance Noise Figure Short Circuit Input Impedance Short Circuit Input Impedance Open Circuit Output Admittance Symbol |hFE| hFE COBO CIBO NF1 NF2 hib hie hoe Test Conditions VCE = 10 Volts, IC = 50 mA, f = 20 MHz VCE = 5 Volts, IC = 1 mA, f = 1 kHz VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz VCE = 10 Volts, IC = 300 A, f = 1 kHz, Rg = 510 VCE = 10 Volts, IC = 300 A, f = 10 kHz, Rg = 1 k VCB = 5V, IC = 1mA, f = 1kHz VCB = 5V, IC = 1mA, f = 1kHz VCB = 5V, IC = 1mA, f = 1kHz Min 3 50 Typ Max 25 150 15 85 8 8 20 1 30 4 16 pF pF 2N2060 Units dB k mhos Copyright Rev. G 2002 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Semicoa Semiconductors, Inc. www.SEMICOA.com Page 3 of 3 |
Price & Availability of 2N2060
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