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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1807
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1807 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as DC/DC converters and power management of notebook computers and so on.
8
PACKAGE DRAWING (Unit: mm)
5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
1.2 MAX. 1.0 0.05 0.25 3 +5 -3 0.1 0.05 0.5 0.6 +0.15 -0.1
FEATURES
* 4.0 V drive available * Low on-state resistance RDS(on)1 = 10 m MAX. (VGS = 10 V, ID = 6.0 A) RDS(on)2 = 14 m MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)3 = 16 m MAX. (VGS = 4.0 V, ID = 6.0 A) * Built-in G-S protection diode against ESD
1 4
0.145 0.055
3.15 0.15 3.0 0.1
6.4 0.2 4.4 0.1 1.0 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE
0.65 0.8 MAX.
0.1
PA1807GR-9JG
Power TSSOP8
0.27 +0.03 -0.08
0.10 M
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Drain Current (pulse)
Note1 Note2
EQUIVALENT CIRCUIT
30 20 12 48 2.0 150 -55 to +150 V V A A W C C
Gate Protection Diode Source Gate Body Diode Drain
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
Total Power Dissipation Channel Temperature Storage Temperature
Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on ceramic substrate of 5000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
2
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G16249EJ1V0DS00 (1st edition) Date Published August 2002 NS CP(K) Printed in Japan
(c)
2002
PA1807
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 24 V VGS = 10 V ID = 12 A IF = 12 A, VGS = 0 V IF = 12 A, VGS = 0 V di/dt = 100 A/s TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 6.0 A VGS = 10 V, ID = 6.0 A VGS = 4.5 V, ID = 6.0 A VGS = 4.0 V, ID = 6.0 A VDS = 10 V VGS = 0 V f = 1.0 MHz VDD = 15 V, ID = 6.0 A VGS = 10 V RG = 10 1.5 7.0 2.0 15 8.1 10.5 12 1000 390 140 16 11 46 11.5 19 3.1 5.0 0.82 32 24 10 14 16 MIN. TYP. MAX. 1.0 10 2.5 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1% ID
Wave Form
VGS VGS
Wave Form
IG = 2 mA VGS
90%
RL VDD
0
10%
PG.
90% 90%
50
ID
0 10% 10%
td(on) ton
tr td(off)
toff
tf
2
Data Sheet G16249EJ1V0DS
PA1807
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
2.5
PT - Total Power Dissipation - W
Mounted on ceramic substrate 2 of 5000 mm x 1.1 mm 2 Mounted on FR-4 board 2 of 2500 mm x 1.6 mm
1.5
1
0.5
0 0 25 50 75 100 125 150 175
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA
100 ID(DC) 10 ID(pulse) PW = 1 ms
ID - Drain Current - A
1
RDS(on) Limited (VGS = 10 V) DC 100 ms
10 ms
0.1 Single pulse Mounted on ceramic substrate of 5000 mm 2 x 1.1 mm 0.1 1 10 100
0.01
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W
1000 Single pulse Mounted on FR-4 board of 2500 mm2 x 1.6 mm 125C/W
100
10
Mounted on ceramic substrate 2 of 5000 mm x 1.1 mm 62.5C/W
1
1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s
Data Sheet G16249EJ1V0DS
3
PA1807
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
50 Pulsed 4.5 V
FORWARD TRANSFER CHARACTERISTICS
100 10 VDS = 10 V Pulsed
ID - Drain Current - A
VGS = 10 V 30
ID - Drain Current - A
40
4.0 V
1 0.1 0.01 0.001 0.0001 TA = 125C 75C 25C -25C
20
10
0 0 0.2 0.4 0.6 0.8 1
1
1.5
2
2.5
3
3.5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
2.4
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S
100 VDS = 10 V Pulsed
VGS(off) - Gate Cut-off Voltage - V
2.2 2 1.8 1.6 1.4 1.2 -50 0 50
VDS = 10 V ID = 1.0 mA
10 TA = -25C 25C 75C 125C
1
100
150
0.1 0.01
0.1
1
10
100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
20 ID = 6.0 A Pulsed 16 VGS = 4.0 V 4.5 V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
20 Pulsed 16
12 10 V 8
12 ID = 6.0 A 8
4
4
0 -50 0 50 100 150
0 0 2 4 6 8 10
Tch - Channel Temperature - C
VGS - Gate to Source Voltage - V
4
Data Sheet G16249EJ1V0DS
PA1807
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
20 Pulsed 16 VGS = 4.0 V 12 4.5 V 8 10 V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1.0 MHz
1000
Ciss
Coss 100 Crss
4
0 0.01
10
0.1 1 10 100
0.1
1
10
100
ID - Drain Current - A
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
10000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 Pulsed
td(on), tr, td(off), tf - Switching Time - ns
1000
IF - Diode Forward Current - A
VDD = 15 V VGS = 10 V RG = 10 tf
10
100 td(off) td(on) 10 tr 1 0.01
1
VGS = 0 V
0.1
0.01 0.1 1 10 100 0.5 0.6 0.7 0.8 0.9 1
ID - Drain Current - A
VF(S-D) - Source to Drain Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
10 ID = 12 A 8 VDD = 24 V 15 V 6.0 V
VGS - Gate to Source Voltage - V
6
4
2
0 0 5 10 15 20
QG - Gate Charge - nC
Data Sheet G16249EJ1V0DS
5
PA1807
* The information in this document is current as of August, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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