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| LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 3 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol V V V CEO CBO EBO Value 25 30 3.0 Unit Vdc Vdc Vdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ , Tstg 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING MMBTH10LT1 = 3EM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I C = 1.0 mAdc, I B= 0 ) Collector-Base Breakdown Voltage (I C = 100 Adc , I E = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc , I C= 0) Collector Cutoff Current ( V CB = 25Vdc , I E = 0 ) Emitter Cutoff Current ( V EB = 2.0Vdc , I C= 0 ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CBO V (BR)EBO I CBO I EBO 30 3.0 -- -- -- -- -- -- 100 100 Vdc Vdc nAdc nAdc V (BR)CEO 25 -- -- Vdc -- -- M33-1/4 LESHAN RADIO COMPANY, LTD. MMBTH10LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = 4.0 mAdc, V CE = 10 Vdc) Collector-Emitter Saturation Voltage (I C = 4.0mAdc, I B = 0.4 mAdc) Base-Emitter On Voltage (I C = 4.0mAdc, V CE = 10Vdc) hFE VCE(sat) V BE 60 -- -- -- -- -- -- 0.5 0.95 -- Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product (V CE = 10 Vdc, I C = 4.0mAdc, f = 100MHz) Collector -Base Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Collector -Base Feedback Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz) Collector Base Time Constant ( I C = 4.0mAdc,V CB=10 Vdc, f = 31.8 MHz) fT C cb C rb 650 -- -- -- -- -- -- -- -- 0.7 0.65 9.0 MHz pF pF ps rb' C C M33-2/4 LESHAN RADIO COMPANY, LTD. MMBTH10LT1 TYPICAL CHARACTERISTICS COMMON-BASE y PARAMETERS versus FREQUENCY (V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25C) yib , INPUT ADMITTANCE 80 70 0 y ib , INPUT ADMITTANCE(mmhos) g ib -10 60 -b ib 40 30 20 10 0 100 jb ib (mmhos) 50 -20 1000MHz -30 -40 700 400 200 100 -50 200 300 400 500 700 1000 -60 0 10 20 30 40 50 60 70 80 f, FREQUENCY (MHz) g ib (mmhos) Figure 1. Rectangular Form Figure 2. Polar Form y fb , FORWARD TRANSFER ADMITTANCE y ib , FORWARD TRANSFER ADMITTANCE (mmhos) 70 60 50 40 30 20 10 0 -10 -20 -30 100 200 300 400 500 700 1000 60 b fb 200 50 400 600 700 100 -g fb jb fb(mmhos) 40 30 1000MHz 20 10 70 60 50 40 30 20 10 0 10 20 30 f, FREQUENCY (MHz) g fb (mmhos) Figure 3. Rectangular Form Figure 4. Polar Form M33-3/4 LESHAN RADIO COMPANY, LTD. MMBTH10LT1 TYPICAL CHARACTERISTICS COMMON-BASE y PARAMETERS versus FREQUENCY (V CB = 10 Vdc, I C = 4.0 mAdc, T A = 25C) y rb , REVERSE TRANSFER ADMITTANCE (mmhos) y rb , REVERSE TRANSFER ADMITTANCE 5.0 0 100 4.0 -1.0 200 MPS H11 jb rb (mmhos) 3.0 -2.0 400 -b rb 2.0 -b rb MPS H1 -g rb -3.0 700 -4.0 1.0 1000MHz -5.0 700 1000 2.0 1.8 1.2 0.8 0.4 0 0.4 0.8 1.2 1.6 2.0 0 100 200 300 400 500 f, FREQUENCY (MHz) g rb (mmhos) Figure 5. Rectangular Form Figure 6. Polar Form y ob , OUTPUT ADMITTANCE y ob , OUTPUT ADMITTANCE (mmhos) 10 9.0 8.0 10 1000MHz 8.0 6.0 5.0 4.0 3.0 jb ob (mmhos) 7.0 700 6.0 b ob 4.0 400 200 2.0 1.0 0 100 200 300 400 500 700 1000 2.0 g ob 0 0 100 2.0 4.0 6.0 8.0 10 f , FREQUENCY (MHz) g ob (mmhos) Figure 7. Rectangular Form Figure 8. Polar Form M33-4/4 |
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