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| CMOSH-4E SURFACE MOUNT ENHANCED SPECIFICATION SILICON SCHOTTKY DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-4E is an Enhanced version of the CMOSH-3 Silicon Schottky Diode in an SOD-523 Surface Mount Package. ENHANCED SPECIFICATIONS: IF from 100 mA max to 200 mA max. SOD-523 CASE BVR from 30V min to 40 V min. VF from 1.0 V max to 0.8 V max. MARKING CODE: 4E MAXIMUM RATINGS: (TA=25C) SYMBOL VRRM IF IFRM IFSM PD TJ, Tstg JA (TA=25C unless otherwise noted) MIN UNITS V mA mA mA mW C C/W Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Forward Surge Current, tp=10ms 40 200 350 750 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS: SYMBOL IR IR BVR VF TEST CONDITIONS VR=25V VR=25V, TA=100C IR=100A IF=2.0mA IF=15mA IF=100mA IF=200mA VR=1.0V, f=1 MHz TYP 90 MAX 500 100 0.33 0.42 0.80 1.0 5.0 UNITS nA A V V V V V pF ns 40 VF VF VF trr 25 50 0.29 0.37 0.61 0.65 7.0 CT IF=IR=10mA, Irr=1.0mA, RL=100 Enhanced specification. Additional Enhanced specification. R1 (24-May 2004) Central TM CMOSH-4E SURFACE MOUNT ENHANCED SPECIFICATION SILICON SCHOTTKY DIODE Semiconductor Corp. SOD-523 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: 4E R1 (24-May 2004) |
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