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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW97 HF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
HF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is made to withstand severe load-mismatch conditions. All leads are isolated from the flange. The transistors are supplied in matched hFE groups.
BLW97
QUICK REFERENCE DATA R.F. performance up to Th = 25 C MODE OF OPERATION s.s.b. (class-AB) PIN CONFIGURATION VCE V 28 IC(ZS) A 0,1 f MHz 1,6 - 28 PL W 175 (PEP) Gp dB > 11,5 dt % > 40 d3 dB < -30 d5 dB < -30
PINNING - SOT121B. PIN DESCRIPTION collector emitter base emitter
handbook, halfpage 4
3
1 2 3 4
1
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value) VBE = 0 open base Emitter-base voltage (open collector) Collector current average peak value; f > 1 MHz Total d.c. power dissipation at Th = 25C R.F. power dissipation f > 1 MHz; Th = 25C Storage temperature Operating junction temperature Ptot(rf) Tstg Tj max. max. IC(AV) ICM Ptot(d.c.) max. max. max. VCESM VCEO VEBO max. max. max.
BLW97
65 V 33 V 4V 15 A 50 A 190 W 230 W 200 C
-65 to + 150 C
102 handbook, halfpage
MGP703
handbook, halfpage
350
MGP704
IC (A)
Ptot (W) 250
10
Th = 70 C
Tmb = 25 C
150
1
1
10
VCE (V)
102
50 0 40 80 Th (C) 120
I Continuous d.c. operation II Continuous r.f. operation (f > 1 Mhz). III Short-time operation during mismatch; (f > 1 MHz).
Fig.2 D.C. SOAR.
Fig.3
Power/temperature derating curves.
THERMAL RESISTANCE (dissipation = 120 W; Th = 25 C i.e. Tmb = 49 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(rf) Rth mb-h = = 0,48 K/W 0,20 K/W Rth j-mb(dc) = 0,63 K/W
August 1986
3
Philips Semiconductors
Product specification
HF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 50 mA IC = 100 mA; open base Emitter-base breakdown voltage IE = 20 mA; open collector Collector cut-off current VCE = 33 V; VBE = 0 Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) IC = 10 A; VCE = 5 V D.C. current gain ratio of matched IC = 10 A; VCE = 5 V Collector-emitter saturation IC = 25 A; IB = 5 A Transition frequency at f = 100 MHz(2) -IE = 10 A; VCB = 28 V -IE = 20 A; VCB = 28 V Collector capacitance at f = 1 MHz IE = ie = 0; VCB = 28 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 28 V Collector-flange capacitance Notes 1. Measured under pulse conditions: tp = 500 s. 2. Measured under pulse conditions: tp = 300 s; = 0,02. Cre Ccf typ. typ. Cc typ. fT fT typ. typ. voltage(1) VCEsat typ. devices(1) hFE1/hFE2 < hFE ESBO ESBR > > typ. 15 ICES < V(BR)EBO > V(BR)CES V(BR)CEO > >
BLW97
65 V 33 V 4V 20 mA 20 mJ 20 mJ 30 to 50 1,2 2,4 V 230 MHz 235 MHz 380 pF 235 pF 4,5 pF
August 1986
4
Philips Semiconductors
Product specification
HF power transistor
BLW97
handbook, halfpage
50
MGP705
handbook, halfpage
260
MGP706
VCE = 28 V hFE
fT (MHz) 220
VCB = 28 V
15 V
40 typ 180 15 V 30 140 typ 5V 20 0 10 20 IC (A) 30 100 0 10 -IE (A) 20 5V
Fig.4 Tj = 25 C.
Fig.5 Tj = 25 C; f = 100 MHz; tp = 300 s.
handbook, halfpage
1000
MGP707
handbook, halfpage
10
MGP708
Cc (pF) 800
IC (A) 1 Th = 70 C 25 C
600 10-1 typ
typ 400
200 0 20 VCB (V) 40
10-2 500
900
VBE (mV)
1300
Fig.6 IE = ie = 0; f = 1 MHz; Tj = 25 C.
Fig.7 VCE = 28 V.
August 1986
5
Philips Semiconductors
Product specification
HF power transistor
APPLICATION INFORMATION R.F. performance in s.s.b. class-AB operation (linear power amplifier). VCE = 28 V; Th = 25 C; f1 = 28,000 MHz; f2 = 28,001 MHz. OUTPUT POWER W 175 (PEP) Note > Gp dB 11,5 > typ. 13,0 dt % 40 < typ. 50 IC A 7,8 < typ. 6,3 d3(1) dB -30 < typ. -34 d5(1) dB -30 typ. -38
BLW97
IC(ZS) A 0,1
1. The stated intermodulation distortion levels are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
handbook, full pagewidth
C10 C1 L4 L1 C2 C3 C4 R2 L2 C8 R1 T.U.T. L3 C7 C11 C6 C14 C12 C13 50
50
C9 C5 L5
R3
VBB
VCC
MGP709
Fig.8 Class-AB (s.s.b.) test circuit.
August 1986
6
Philips Semiconductors
Product specification
HF power transistor
List of components: C1 C2 C3 C4 C5 C6 C7 C8 C9 = 47 pF (500 V) multilayer ceramic chip capacitor(1) = 100 pF film dielectric trimmer = 2 x 130 pF (300 V) multilayer ceramic chip capacitors in parallel(1) = 280 pF film dielectric trimmer = 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103 = 2 x 180 pF (300 V) multilayer ceramic chip capacitors in parallel(1) = 100 nF (50 V) multilayer ceramic chip capacitor 2222 856 48104 = 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103 = 2,2 F - 63 V solid aluminium electrolytic capacitor
BLW97
C10 = 5 x 82 pF (500 V) multilayer ceramic chip capacitors in parallel(1) C11 = 250 pF air dielectric trimmer C12 = 5 x 33 pF ceramic feed-through capacitors mounted in parallel on a brass plate C13 = 100 pF air dielectric trimmer C14 = 3 x 91 pF (500 V) multilayer ceramic chip capacitors in parallel(1) R1 R2 R3 L1 L2 L3 L4 L5 Note 1. American Technical Ceramics capacitor or capacitor of same quality. = 0,7 - 7 W (7 x 4,7 - 1 W carbon resistors in parallel) = 27 - 0,25 W carbon resistor = 4,7 - 0,25 W carbon resistor = 73 nH; 4 turns Cu wire (1,5 mm); int. dia. 7 mm; length 9,4 mm; leads 2 x 5 mm = Ferroxcube wide-band h.f. choke grade 3B (cat. no. 4312 020 36640); 6 leads in parallel = 70,4 nH; 4 turns Cu wire (2 mm); int. dia. 7 mm; length 14,8 mm; leads 2 x 5 mm = 83,5 nH; 4 turns Cu wire (2 mm); int. dia. 8 mm; length 15 mm; leads 2 x 5 mm = Ferroxcube wide-band h.f. choke grade 3 B (cat. no. 4312 020 36640) with 6 leads in parallel
August 1986
7
Philips Semiconductors
Product specification
HF power transistor
BLW97
handbook, halfpage
-20
MGP710
handbook, halfpage
16
MGP711
80 c dt (%)
d3, d5 (dB) typ -40
d3 d5
GP (dB) 12
GP
60 c dt typ
8
40
-60 4 20
-80
0 0 120 PL (W) P.E.P. 240 0 120 PL (W) P.E.P. 240
0
VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C.
VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C.
Fig.9
Intermodulation distortion (see note on preceding page).
Fig.10 Power gain and double-tone efficiency.
RUGGEDNESS The BLW97 is capable of withstanding full load mismatch (VSWR = 50 through all phases) up to 150 W (P.E.P.) or a load mismatch (VSWR = 5 through all phases) up to 175 W (P.E.P.) under the following conditions: VCE = 28 V; f = 28 MHz; Th = 25 C; Rth mb-h = 0,2 K/W. Figures 11 and 12 t typical curves which are valid for one transistor of a push-pull amplifier in s.s.b. class-AB operation.
30
MGP712
handbook, halfpage
GP (dB)
20 typ
10 1 10 f (MHz)
102
VCE = 28 V; IC(ZS) = 0,1 A; PL = 175 W(PEP); Th = 25 C; ZL = 1,55
Fig.11 Power gain.
August 1986
8
Philips Semiconductors
Product specification
HF power transistor
BLW97
handbook, halfpage
4
MGP713
handbook, halfpage
1
MGP714
ri, -xi ()
ri
ri, xi () 0.5
xi
-xi 2 typ 0 typ
ri
0 1 10 f (MHz)
102
-0.5 25
75
f (MHz)
125
VCE = 28 V; IC(ZS) = 0,1 A; PL = 175 W(PEP); Th = 25 C; ZL = 1,55
VCE = 28 V; PL = 175 W; Th = 25 C; class-B operation.
Fig.12 Input impedance (series components).
Fig.13 Input impedance (series components).
handbook, halfpage
3
MGP715
1.5 XL ()
handbook, halfpage
20
MGP716
RL () 2 RL
GP (dB) 15
1.0
1
typ
0.5
10
typ
XL 0 25 0 75 f (MHz) 125 5 25 75 f (MHz) 125
VCE = 28 V; PL = 175 W; Th = 25 C; class-B operation.
VCE = 28 V; PL = 175 W; Th = 25 C; class-B operation.
Fig.14 Load impedance (series components).
Fig.15 Power gain.
August 1986
9
Philips Semiconductors
Product specification
HF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLW97
SOT121B
D
A F q U1 C B
H L b
c
4
3
w2 M C A
p
U2
D1
U3
w1 M A B
1
H
2
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 6.17 0.286 0.243 b 5.82 5.56 c 0.16 0.10 D D1 F 2.67 2.41 H 28.45 25.52 L 7.93 6.32 p 3.30 3.05 Q 4.45 3.91 q 18.42 U1 24.90 24.63 0.98 0.97 U2 6.48 6.22 0.255 0.245 U3 12.32 12.06 0.485 0.475 w1 0.51 0.02 w2 1.02 45 0.312 0.130 0.249 0.120 0.175 0.725 0.154 0.04
12.86 12.83 12.59 12.57
0.229 0.006 0.219 0.004
0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005
OUTLINE VERSION SOT121B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
10
Philips Semiconductors
Product specification
HF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW97
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
11

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