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| AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOD417 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = -30V (V GS = -10V) ID = -25A RDS(ON) < 34m (VGS = -10V) RDS(ON) < 55m (VGS = -4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C C C Maximum -30 20 -25 -20 -60 -14 30 50 25 5 3.2 -55 to 175 Units V V A A mJ W W C TA=25C G TA=100C ID IDM IAR EAR PD PDSM TJ, TSTG Repetitive avalanche energy L=0.3mH TC=25C Power Dissipation B TC=100C TA=25C TA=70C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case D Symbol t 10s Steady-State Steady-State RJA RJL Typ 16.7 40 2.5 Max 25 50 3 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD417 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-7A Forward Transconductance VDS=-5V, ID=-20A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C -1 -60 27 36 40 18 -0.75 -1 -6 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 140 90 6 16.2 VGS=-10V, VDS=-15V, ID=-20A 8.2 2.9 3.6 8 VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 IF=-20A, dI/dt=100A/s 30 22 26 23 14 9 55 34 -1.9 Min -30 -1 -5 100 -3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation P DSM is based on R JA (<10s) and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0: Oct. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 -10V 50 40 -ID (A) 30 20 10 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 60 Normalized On-Resistance 55 50 RDS(ON) (m) 45 40 35 30 25 20 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 ID=-20A 70 60 RDS(ON) (m) 50 40 30 20 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C -40C 1.0E+01 VGS=-10V VGS=-4.5V 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-10V ID=-20A -6V ID=-10mA, 25 VDS=-5V VGS=0V 20 -4.5V -ID(A) VGS=-3.5V 15 10 125C 5 25C -40C 2.5 3 3.5 4 4.5 5 0 1 1.5 2 -VGS(Volts) Figure 2: Transfer Characteristics 850 185 90 VGS=-4.5V ID=-7A 125C Alpha & Omega Semiconductor, Ltd. AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-20A 1500 8 -VGS (Volts) ID=-10mA, VGS=0V Capacitance (pF) 1250 Ciss 1000 750 500 Crss 250 0 Coss 6 4 2 0 0 3 6 9 12 15 18 -Qg (nC) Figure 7: Gate-Charge Characteristics 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 RDS(ON) limited DC 200 160 Power (W) 120 80 40 0 0.0001 850 185 90 10s 100s TJ(Max)=175C TC=25C TJ(Max)=175C TC=25C 0.1 1 VDS (Volts) 10 100 0.001 0.01 0.1 1 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=Tc+PDM.ZJC.RJC RJC=3C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse 0.01 0.00001 T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD417 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 -ID(A), Peak Avalanche Current 100 80 TA=25C 60 40 TA=150C 20 0 0.000001 60 Power Dissipation (W) ID=-10mA, VGS=0V 50 40 30 20 10 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability TCASE (C) Figure 13: Power De-rating (Note B) 30 25 Current rating 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 60 50 40 Power (W) 30 20 10 0 0.001 850 185 90 TA=25C 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.001 0.00001 Ton 0.001 0.01 0.1 1 10 0.01 T 100 1000 0.0001 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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