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AOD4120 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4120 is Pb-free (meets ROHS & Sony 259 specifications). AOD4120L is a Green Product ordering option. AOD4120 and AOD4120L are electrically identical.
TO-252 D-PAK
Features
1.4
VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON) <18 m (VGS = 10V) RDS(ON) <25 m (VGS = 4.5V) RDS(ON) <75 m (VGS = 2.5V) 193 UIS Tested 18 Rg,Ciss,Coss,Crss Tested
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
C C C
Maximum 20 16 25 23 75 13 25 33 16.7 2.5 1.7 -55 to 175
Units V V A A mJ W W C
TC=25C
G
TC=100C
ID IDM IAR EAR PD PDSM TJ, TSTG
Repetitive avalanche energy L=0.3mH TC=25C Power Dissipation B Power Dissipation
A
TC=100C TA=25C TA=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient B Maximum Junction-to-Case
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 17 40 3.6
Max 25 50 4.5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOD4120
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250uA, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=16V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=10A VGS=2.5V, ID=4A gFS VSD IS Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V G Maximum Body-Diode Continuous Current 0.6 75 14 21 20 57 19 0.77 1 30 900 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 162 105 1.8 15 VGS=10V, VDS=10V, ID=20A 7.2 1.8 2.8 4.5 VGS=10V, VDS=10V, RL=0.5, RGEN=3 IF=20A, dI/dt=100A/s 9.2 18.7 3.3 18 9.5 2.7 18 9 25 75 S V A pF pF pF nC nC nC nC ns ns ns ns ns nC 18 m 1.26 Min 20 1 5 100 2 Typ Max Units V uA nA V A
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with of T A =25C. The Power dissipation P DSM is based on R JA and the maximum allowed junction temperature 0 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0: Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOD4120
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V 30 8V 6V 25 20 ID(A) 4.5V 15 10 5 VGS=3V 0 VDS=5V 25C -40C 125C
80 60 40 20 0 0
ID (A)
1.4 494 692 593 830
3.5V
2 3 4 VDS (Volts) Fig 1: On-Region Characteristics
1
5
1
3 4 VGS(Volts) Figure 2: Transfer Characteristics
2
5
80 70 60 RDS(ON) (m) 50 40 30 20 10 0 0 5 10 15 20 25 30 VGS=10V VGS=4.5V VGS=2.5V
1.60 Normalized On-Resistance
193 18
VGS=10V, 20A 1.40 VGS=4.5V, 10A
1.20
1.00
VGS=2.5V, 4A
0.80
0.60 -50 -25 0 25 50
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
59 75 142
100
125
150
175
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
35 ID=20A 30
100 10 1 125C -40C
RDS(ON) (m)
IS (A)
25
125C
0.1 0.01
20 25C 15
0.001 0.0001
25C
10 3 4 5 6 7 8 9 10
0.00001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOD4120
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 200 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 100 0 0 Crss 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 5 20 VDS=12.5V ID=20A 1400 1200 Ciss Capacitance (pF) 1000 800 600 400 Coss
1.4 494 692 593 830
193 18
10s 100s Power (W)
200 160 120 80 40
TJ(Max)=175C TC=25C
10 ID (Amps) RDS(ON) limited 1
DC
1ms
TJ(Max)=175C, TC=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100
0 0.0001
0.001
0.01
59 0.1
1
10
Pulse Width (s) 142 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
10 ZJC Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=4.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOD4120
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35 ID(A), Peak Avalanche Current 30 25 TA=25C 20 15 10 0.000001 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability
tA =
L ID
Power Dissipation (W)
40 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
BV - VDD
1.4 494 692 593 830
30 25 Current rating ID(A) Power (W) 20 15 10
50 40 30 20 10
193 18
TA=25C
5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
0 0.01
0.1
1
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
59 10 142
100
1000
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 0.01 0.1 1 PD Ton 10
0.01 Single Pulse 0.001 0.00001 0.0001 0.001
T 100 1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.

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