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Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 9.90.3 4.60.2 2.90.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.00.5 3.20.1 13.70.2 4.20.2 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 s Absolute Maximum Ratings (TC = 25C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 600 30 5 10 62.5 40 2 150 -55 to +150 Unit V V A A mJ W C C 1 2 2.540.3 3 5.080.5 1: Gate 2: Drain 3: Source TO-220D Package Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature * TC = 25C Ta = 25C L = 5mH, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VDD = 200V, ID = 3A VGS = 10V, RL = 66.6 Conditions VDS = 480V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 3A VDS = 25V, ID = 3A IDR = 5A, VGS = 0 1200 VDS = 20V, VGS = 0, f = 1MHz 140 40 20 30 150 50 1.7 600 2 0.85 3.4 -1.6 5 1.5 min typ max 100 1 Unit A A V V S V pF pF pF ns ns ns ns Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time 1 Power F-MOS FETs Area of safe operation (ASO) 100 30 10 t=1ms 3 1 0.3 100ms 0.1 0.03 0.01 1 3 10 30 100 300 1000 DC 10ms 60 2SK3049 PD Ta 10 (1) TC=Ta (2) Without heat sink IAS max. IAS L-load TC=25C Allowable power dissipation PD (W) Non repetitive pulse TC=25C Avalanche current IAS (A) 50 3 62.5mJ Drain current ID (A) 40 (1) 30 1 0.3 20 0.1 10 (2) 0 0 20 40 60 80 100 120 140 160 0.03 0.01 0.1 0.3 1 3 10 Drain to source voltage VDS (V) Ambient temperature Ta (C) L-load (mH) ID VGS VDS=25V RDS(on) ID Drain to source ON-resistance RDS(on) () 2.5 5 | Yfs | ID Forward transfer admittance |Yfs| (S) VGS=10V VDS=25V TC=0C 4 25C 100C 3 10 8 2.0 TC=100C Drain current ID (A) TC=100C 6 1.5 25C 1.0 0C 4 25C 0C 2 2 0.5 1 0 0 2 4 6 8 10 0 0 2 4 6 8 0 0 2 4 6 8 Gate to source voltage VGS (V) Drain current ID (A) Drain current ID (A) Rth(t) t 102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) Thermal resistance Rth(t) (C/W) 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 2 |
Price & Availability of 2SK30 |
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