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| Transistors 2SB0710, 2SB0710A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD0602 and 2SD0602A I Features * Large collector current IC * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.40+0.10 -0.05 3 0.16+0.10 -0.06 1.50+0.25 -0.05 2.8+0.2 -0.3 2 (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10 1.1+0.2 -0.1 Parameter Collector to base voltage Collector to emitter voltage 2SB0710 2SB0710A 2SB0710 2SB0710A Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -30 -60 -25 -50 -5 -1 -500 200 150 -55 to +150 Unit V V 1: Base 2: Emitter 3: Collector 0 to 0.1 1.1+0.3 -0.1 I Absolute Maximum Ratings Ta = 25C (0.65) JEDEC: TO-236 EIAJ: SC-59 Mini Type Package Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V A mA mW C C Marking Symbol * 2SB0710 : C * 2SB0710A : D I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Symbol ICBO 2SB0710 2SB0710A 2SB0710 2SB0710A VEBO hFE1 hFE2 *2 Conditions VCB = -20 V, IE = 0 IC = -10 A, IE = 0 IC = -10 mA, IB = 0 IE = -10 A, IC = 0 VCE = -10 V, IC = -150 mA VCE = -10 V, IC = -500 mA IC = -300 mA, IB = -30 mA IC = -300 mA, IB = -30 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz Min -30 -60 -25 -50 -5 85 40 Typ Max - 0.1 Unit A V VCBO VCEO 340 - 0.35 -1.1 200 6 15 - 0.6 -1.5 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Marking symbol 2SB0710 2SB0710A VCE(sat) VBE(sat) fT Cob MHz pF Q 85 to 170 CQ DQ R 120 to 240 CR DR S 170 to 340 CS DS No-rank 85 to 340 C D Product of no-rank is not classified and have no indication for rank. 0.40.2 5 V V V V 1 2SB0710, 2SB0710A PC Ta 240 -1 200 Transistors IC VCE Ta = 25C -800 -700 IC I B VCE = -10 V Ta = 25C Collector power dissipation PC (mW) 200 -1 000 Collector current IC (mA) 160 -800 IB = -10 mA -9 mA -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA 120 -600 80 -400 40 -200 0 0 0 40 80 120 160 Collector current IC (mA) -600 -500 -400 -300 -200 -100 0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 -12 0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) -10 -3 -1 - 0.3 - 0.1 25C Ta=75C -25C IC / IB = 10 -100 -30 -10 3 VBE(sat) IC IC / IB = 10 600 hFE IC VCE = -10 V Forward current transfer ratio hFE 500 400 25C -1 Ta = -25C 75C 300 Ta = 75C 200 25C -25C - 0.03 - 0.01 - 0.3 - 0.1 - 0.003 - 0.001 -1 -3 -10 -30 -100 -300 -1 000 - 0.03 - 0.01 -1 -3 -10 -30 -100 -300 -1 000 100 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (mA) Collector current IC (mA) Collector current IC (A) fT I E 240 24 Cob VCB Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V) VCB = -10 V Ta = 25C IE = 0 f = 1 MHz Ta = 25C -120 VCER RBE IC = -2 mA Ta = 25C Transition frequency fT (MHz) 200 20 -100 160 16 -80 120 12 -60 2SB0710A -40 2SB0710 -20 80 8 40 4 0 1 2 3 5 10 20 30 50 100 0 -1 -2 -3 -5 -10 -20-30 -50 -100 0 1 3 10 30 100 300 1 000 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 |
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