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| ON Semiconductort Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5088 30 35 3.0 50 625 5.0 1.5 12 -55 to +150 2N5089 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C 2N5088 2N5089 1 2 3 CASE 29-11, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W 2 BASE COLLECTOR 3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min 1 EMITTER Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. RJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO 2N5088 2N5089 V(BR)CBO 2N5088 2N5089 ICBO 2N5088 2N5089 IEBO -- -- 50 100 -- -- 50 50 nAdc 35 30 -- -- nAdc 30 25 -- -- Vdc Vdc (c) Semiconductor Components Industries, LLC, 2001 1 November, 2001 - Rev. 1 Publication Order Number: 2N5088/D 2N5088 2N5089 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) hFE 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 VCE(sat) VBE(on) 300 400 350 450 300 400 -- -- 900 1200 -- -- -- -- 0.5 0.8 Vdc Vdc -- (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(2) Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base-Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc)(2) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2N5088 2N5089 NF 2N5088 2N5089 -- -- 3.0 2.0 fT Ccb Ceb hfe 350 450 1400 1800 dB 50 -- -- -- 4.0 10 MHz pF pF -- RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 2N5088 2N5089 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE 30 20 en , NOISE VOLTAGE (nV) BANDWIDTH = 1.0 Hz en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS 0 30 BANDWIDTH = 1.0 Hz 20 RS 0 f = 10 Hz 100 Hz 10 kHz 10 7.0 5.0 10 7.0 5.0 1.0 kHz 3.0 300 A 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 100 kHz 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 2. Effects of Frequency 10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 RS 0 10 20 10 A 50 100 200 20 16 NF, NOISE FIGURE (dB) 12 8.0 4.0 0 10 Figure 3. Effects of Collector Current BANDWIDTH = 1.0 Hz IC = 10 mA 3.0 mA 1.0 mA 300 A 100 A 30 A BANDWIDTH = 10 Hz to 15.7 kHz 500 A 100 A 10 A IC = 1.0 mA 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 4. Noise Current 100 Hz NOISE DATA 300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 20 BANDWIDTH = 1.0 Hz 100 A 3.0 mA 1.0 mA 300 A 30 A 10 A IC = 10 mA NF, NOISE FIGURE (dB) 16 12 8.0 Figure 5. Wideband Noise Figure IC = 10 mA 3.0 mA 1.0 mA 300 A 100 A 4.0 0 BANDWIDTH = 1.0 Hz 10 20 30 A 10 A 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Figure 7. Noise Figure http://onsemi.com 3 2N5088 2N5089 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 2.0 VCE = 5.0 V TA = 125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 10 -55C Figure 8. DC Current Gain 1.0 0.8 V, VOLTAGE (VOLTS) 0.6 0.4 0.2 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 VBE @ VCE = 5.0 V RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) TJ = 25C to 125C -55C to 25C 20 50 100 50 100 Figure 9. "On" Voltages BANDWIDTH PRODUCT (MHz) Figure 10. Temperature Coefficients 8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25C 500 300 200 f T, CURRENT-GAIN 100 70 50 1.0 VCE = 5.0 V TJ = 25C 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 11. Capacitance Figure 12. Current-Gain -- Bandwidth Product http://onsemi.com 4 2N5088 2N5089 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX G H V 1 D J C SECTION X-X N N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR DIM A B C D G H J K L N P R V http://onsemi.com 5 2N5088 2N5089 Notes http://onsemi.com 6 2N5088 2N5089 Notes http://onsemi.com 7 2N5088 2N5089 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N5088/D |
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