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| LAB MECHANICAL DATA Dimensions in mm SEME 2N4240 NPN TRANSISTOR MEDIUM POWER HIGH VOLTAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. APPLICATIONS 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 24.33 (0.958) 24.43 (0.962) Designed for switching regulator applications where high frequency and high voltage swings are required. 14.48 (0.570) 14.99 (0.590) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 Package. ABSOLUTE MAXIMUM RATINGS (Tcase=25C unless otherwise stated) VCEO VCB VEB IC IC IB PD TJ , Tstg RqJC Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Continuous Peak (1) Base Current Total Power Dissipation Derate above 25 C Operating and Storage Junction Temperature Range Thermal Resistance , Junction To Case 300V 500V 6V 2A 5A 1A 35W 0.2W / C -65 to 200 C 5.0C / W NOTES: (1) Pulse Test: Pulse Width = 5.0 ms , Duty Cycle 10%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 8/93 2N4240 ELECTRICAL CHARACTERISTICS (Tcase = 25C , unless otherwise stated) OFF CHARACTERISTICS Parameter Test Conditions Collector - Emitter VCEO(sus) IC = 200mA , IB = 0 Sustaining Voltage Collector Cutoff Current VCE = 150V , IB = 0 ICEO VCE = 450V , VBE(off) = 1.5V ICEX Collector Cutoff Current VCE = 450V , VBE(off) = 1.5V , TC =150C IEBO Emitter Cutoff Current VBE = 6V , IC = 0 ON CHARACTERISTICS (1) Parameter hFE VCE(sat) VBE(sat) VBE(on) Is/b Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter On Voltage Second Breakdown Collector Current Test Conditions IC = 0.1A , VCE = 10V IC = 0.75A , VCE = 2V IC = 0.75A , VCE = 10V IC = 0.75A , IB = 75mA IC = 0.75A , IB = 75mA IC = 0.1A , VCE = 10V (VCC = 100V) 350 Min. 300 5.0 2.0 5.0 0.5 Typ. Max. Unit. V mA mA mA Min. 40 10 30 Typ. Max. 100 150 1.0 1.8 1.4 Unit. -- V V V mA DYNAMIC CHARACTERISTICS Parameter Test Conditions Current Gain - IC = 200mA , VCE = 10V fT (2) f Bandwidth Product test = 5.0MHz Cob Output Capacitance VCB = 10V , IE = 0 , f = 1.0MHz SWITCHING CHARACTERISTICS Parameter tr ts tf Rise Time Storage Time Fall Time Test Conditions VCC = 200V , IC = 0.75A RL = 200W , IB1 = 100mA VCC = 200V , IC = 0.75A IB1 = IB2 = 75mA VCC = 200V , IC = 0.75A IB1 = IB2 = 75mA Min. 15 Typ. Max. Unit. MHz 120 pF Min. Typ. Max. 0.5 6.0 3.0 Unit. mS mS mS NOTES: (1) Pulse Test: Pulse Width = 300 ms , Duty Cycle 2% (2) fT = |hfe| * ftest FIGURE 1 - SWITCHING TIME TEST CIRCUIT RB AND RC varied to obtain desired current levels. D1 must be fast recovery type. For td and tr , D1 is disconnected and V2 = 0. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 8/93 |
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