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THN5602F
NPN SiGe RF POWER TRANSISTOR
SOT-89
The THN5602F is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor)
4
encapsulated in a plastic SOT-89 SMD package.
The THN5602F can be used as a driver device or
an output device, depending on the specific application.
a
FEATURES
o 4.8 Volt operation o P1dB 28 dBm @f=465MHz o Power gain 10 dB @f=465MHz PIN CONFIGURATION Unit : mm
a
APPLICATIONS
o Hand-held radio equipment in common emitter class-AB operation in 450 MHz communication band.
PIN NO 1 2 3 4
SYMBOL b c e c
DESCRIPTION base collector emitter collector
a
MAXIMUM RATINGS
SYMBOL VCBO VCEO VEBO Ic PT TSTG TJ PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Juction Temperature Ts = 60E ; note 1 CONDITION Open Emitter Open Base Open Collector VALUE 20 8 4 350 1 -65 ~ 150 E E 150 UNIT V V V mA W
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THN5602F
a
THERMAL CHARACTERISTICS
SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITION PT=1W; Ts=60E ;note1 VALUE 55 UNIT K/W
* Note 1. Ts is temperature at the soldering point of the collector pin.
a
QUICK REFERENCE DATA
RF performance at Ts 60 E Mode of Operation CW, class-AB in common emitter test circuit (see Fig 6.) VCE [V] 4.8 PL [mW] 630 A GP [dB] 10 c [%]
f [MHz] 465
C
A 60
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THN5602F
a
DC CHARACTERISTICS
Tj=25 E unless otherwise specified PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance CONDITION open emitte open base open collector MIN. 20 8 3 0.1 60 200 4.5 pF MAX. UNIT V V V mA
SYMBOL BVCBO BVCEO BVEBO IS hFE Cc
160 Hfe 140 120 100 80 60 40 20
6
Cc [pF]
5
4
3
2
0 0.00
0
0.10 0.20 0.30 0.40 Ic(A) 0.50
2
4
6
8
10 VCB [V]
VCE = 4.8V ; Tj =25E
f=900MHz; V CE=4.8V; I CQ=5mA; Ts <
60E
Fig 1. DC Current gain v.s collector current
Fig 2. Collector-base capacitance v.s collectorbase voltage(DC)
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THN5602F
a
APPLICATION INFORMATION
RF performance at Ts 60 E Mode of Operation CW, class-AB in common emitter configuration. VCE [V] 4.8 PL [mW] 630 A GP [dB] 10 c
C
f [MHz] 465
[%]
A 60
THN5602F Source/Load Impedance as a frequency VCE = 4.8V, ICQ = 5mA, Pout = 28dBm ZS [] ZL [] Freq. [MHz] 440 450 460 470 Rs 17.34 17.21 17.12 17.09 Xs 6.91 7.89 8.90 9.95 RL 22.21 19.31 17.20 15.66 XL -0.59 2.58 7.07 19.00
THN5602F Transistor Impedance
ZL
Zs
20
30
ZS [O]
18 16 14 12 10 8 6 4 430 440 450
Rs
ZL [O]
25 20 15 10 5
RL
Xs
XL
0 -5
460
470
480
-10 430 440 450 460 470 480
Freq[MHz]
Freq [MHz]
Fig 3. Source Impedance (series components) as a freq, typical values.
Fig 4. Load Impedance (series components) as a freq, typical values.
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THN5602F
Vcc
Part List C1, C7,C10,C11 C3,C4 C2 C5
RF_OUT
470pF 6pF 8pF 7pF 12pF 1nF 100nF 8.2nH 3turn 8turn 2 mm
50
C6 C9,C12 C8,C13 L1(Chip L : 1608) L2,L3,L4 (Air Coil)
RF IN
:AirCol 79.5
L5,L6 (Air Coil) Air Coil Diameter
Unit : mm
Fig 5. THN5602F Test Circuit Board Layout @ f = 465MHz Test board : FR4 glass epoxy board, dielectric constant = 4.5, thickness = 0.8 mm Test condition : CW test, VCC = 4.8 V, ICQ = 5 mA, frequency = 465 MHz.
THN5602F
THN5602F Test Circuit Schematic Diagram
Fig 6. Test Circuit Schematic Diagram @f = 465MHz
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THN5602F
a
PACKAGE DIMENSION
Fig 7. SOT-89 Package dimension
Sep-203 www.tachyonics.co.kr -6/ Rev1.1

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