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| S T M8305 S amHop Microelectronics C orp. May,13 2005 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 7A R DS (ON) ( m W ) Max ID -5.3A R DS (ON) ( m W ) Max 25 @ V G S = 10V 40 @ V G S = 4.5V D1 8 45 @ V G S = -10V 60 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol VDS VGS 25 C 70 C ID IDM IS PD TJ, TS TG N-C hannel P-C hannel 30 20 7 6 29 1.7 2 1.44 -55 to 150 -30 20 -5.3 -4.2 -21 -1.7 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C Ta=70 C Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M8305 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 6.6A VGS =4.5V, ID= 5A VDS = 5V, VGS = 4.5V VDS = 5V, ID = 6.6A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.5 18 32 20 9 630 170 105 3.5 15.2 5.3 22.1 12.8 13.3 7.2 2.9 3.6 18 6 26 15 15 8 3.4 4.2 745 200 125 3 25 40 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =15V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 15V ID = 6.6 A VGS = 10V R GE N = 3 ohm VDS =15V, ID =6.6A,VGS =10V VDS =15V, ID =6.6A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =15V, ID = 6.6 A VGS =10V 2 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M8305 P-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg c Condition VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID = -5A VGS =-4.5V, ID=-4A VDS = -5V, VGS = -10V VDS = -5V, ID= -5A Min Typ C Max Unit -30 -1 V uA 100 nA -1 -1.5 35 48 -12 9 770 180 110 3.3 12.6 9.6 49.5 27.8 14 7.2 2.3 3.2 15 11 56 32 16 8 2.7 3.8 885 205 133 -3 45 60 V m ohm m ohm OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =-15V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = -15V R L = 3 ohm VGS = -10V R GE N = 3 ohm VDS =-15V, ID =-5A,VGS =-10V VDS =-15V, ID =-5A,VGS =-4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =-15V, ID = -5 A VGS =-10V 3 ohm S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge tD(ON) tr tD(OFF) tf Qg ns ns ns ns nC nC nC nC S T M8305 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol b Condition VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.8 -0.8 1.2 -1.2 C DRAIN-SOURCE DIODE CHARACTERISTICS VSD V Notes a.Surface Mounted on FR4 Board, tO10sec. * R JA is 62.5 C/W when mounted on 1in2 FR-4 board with 2oz Copper * R JA is 125 C/W when mounted on 0.02 in2 FR-4 board with 2oz Copper b.Pulse Test:Pulse WidthO300gs, Duty Cycle O 2%. c.Guaranteed by design, not subject to production testing. N-Channel 20 16 VGS=4.5V VGS=5V VGS=10V 25 VGS=4V 20 -55 C 5 ID, Drain Current(A) 12 VGS=3.5V 8 VGS=3V VGS=2.5V 0 0 0.5 1 1.5 2 2.5 3 ID, Drain Current (A) 15 10 Tj=125 C 5 0 0.0 25 C 0.8 1.6 2.4 3.2 4.0 4.8 4 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 2.2 Figure 2. Transfer Characteristics V G S =10V ID=6.6A R DS (ON), On-R es is tance (Normalized) 1.8 1.4 1.0 0.6 0.4 0 -50 C, Capacitance (pF) 800 600 400 200 Crss 0 0 5 10 15 20 25 30 Coss Ciss -25 0 25 50 75 100 125 150 Tj( C) VDS, Drain-to Source Voltage (V) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4 S T M8305 N-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS=V GS ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gFS , T rans conductance (S ) Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS=5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 5 S T M8305 P-C hannel 20 25 -V G S =6V -V G S =10V 16 -V G S =4.5V -V G S =5V -V G S =4V 20 -ID, Drain C urrent (A) -ID, Drain C urrent (A) 12 15 T j=125 C 10 25 C 5 0 -55 C 8 -VGS=3V 4 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C har acter istics F igure 2. Tr ansfer C har acter istics 1200 1000 1.6 1.4 C is s V G S =-10V ID=-5A C , C apacitance (pF ) RDS(ON), On-Resistance (Normalized) 800 600 400 200 C rs s 0 0 5 1.2 1.0 0.8 0.6 0 -50 C os s 10 15 20 25 30 -25 0 25 50 75 100 125 150 Tj=( C ) -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R esistance Var iation with Temper ature 6 S T M8305 P-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -55 -50 -25 0 25 50 75 100 125 V DS=V GS ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 gFS , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS=-5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 7 S T M8305 N-C hannel V G S , G ate to S ource V oltage (V ) 10 ID, Drain C urrent (A) 40 5 8 6 4 2 0 0 V DS=15V ID=6.6A 10 R (O DS N) L im it 10 1s 10m s 0m s 11 DC 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50 3 6 9 12 15 18 21 24 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea P-C hannel -V G S , G ate to S ource V oltage (V ) 10 -ID, Drain C urrent (A) 50 8 6 4 2 0 0 V DS=-15V ID=-5A 10 R DS (O N ) L im it 10 10 0m s ms 11 DC 1s 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 50 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) -V DS , B ody Diode F orward V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea 8 S T M8305 V DD ton V IN D RL V OUT V OUT R GE N G 90% 10% toff tr 90% td(on) td(off) 90% 10% tf 5 VG S INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms N-C hannel 9 Normalized Transient 1 0.5 0.2 Thermal Resistance 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 P-C hannel 9 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 9 S T M8305 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 10 S T M8305 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 11 |
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