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| 2SK3273-01MR Trench Gate MOSFET > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 6,5m 70A 70W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) VGS E AV PD T ch T stg Rating 60 70 280 +30 / -20 700.6 70 150 -55 ~ +150 * L=0,19mH, VCC=24V > Equivalent Circuit Unit V A A V mJ* W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=40A VGS=40V VDS=10V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=80A RGS=10 Tch=25C L = 100H IF=80A VGS=0V Tch=25C IF=50A VGS=0V -dIF/dt=100A/s Tch=25C ID=40A Min. 60 2,5 Typ. 3,0 1,0 10,0 10 5,0 50 9000 1250 700 50 200 150 135 1,0 85 0,25 Max. 3,5 100,0 500,0 100 6,5 Unit V V A A nA m S pF pF pF ns ns ns ns A V ns C fs iss oss rss d(on) r d(off) f AV SD rr rr 25 70 1,5 - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to ambient channel to case Min. Typ. Max. 62,5 1,79 Unit C/W C/W N-channel MOS-FET 60V 6,5m 70A 70W 2SK3273-01MR Trench Gate MOSFET Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=25A; VGS=10V > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [m] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test; TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [m] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=80A; Tch=25C Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; Tch=25C C [F] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Maximum Avalanche Energy vs. starting Tch EAV=f(starting Tch): VCC=24V; IAV 80A Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Zth(ch-c) [K/W] Transient Thermal impedance Zthch=f(t) parameter:D=t/T EAV [mJ] 10 ID [A] 12 starting Tch [C] VDS [V] t [s] This specification is subject to change without notice! |
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