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| SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.012 @ VGS = 10 V 0.014 @ VGS = 4.5 V ID (A) 75 70 D TO-220AB TO-263 G DRAIN connected to TAB G GDS Top View SUP75N06-12L SUB75N06-12L N-Channel MOSFET DS Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD PD TJ, Tstg Limit 60 "20 75 53 Unit V A 180 60 180 142b 3.75c -55 to 175 W _C mJ Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 70807 S-59182--Rev. B, 07-Sep-98 www.vishay.com S FaxBack 408-970-5600 RthJC RthJA 62.5 1.05 Symbol Limit 40 Unit _C/W 2-1 SUP/SUB75N06-12L Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125_C DiS OS Ri Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 30 A VGS = 4.5 V, ID = 30 A, TJ = 125_C VGS = 4.5 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 60 0.0105 75 0.0085 0.012 0.019 0.024 0.014 0.0225 0.03 S W 60 V 1 2 "100 1 50 150 A mA A nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 30 V, RL = 0.4 W , ID ] 75 A, VGEN = 10 V, RG = 2.5 W VDS = 30 V, VGS = 10 V, ID = 75 A V V VGS = 0 V, VDS = 25 V f = 1 MH V V, MHz 3170 550 170 59 10 13.5 9 8 77 20 20 20 ns 150 40 100 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Is ISM VSD trr IRM(REC) Qrr IF = 60 A di/d = 100 A/ A, di/dt A/ms IF = 75 A, VGS = 0 V 45 2 0.045 75 A 180 1.4 V ns A mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70807 S-59182--Rev. B, 07-Sep-98 SUP/SUB75N06-12L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 VGS = 10 thru 5 V 90 I D - Drain Current (A) 120 4V 80 I D - Drain Current (A) 120 Transfer Characteristics 160 60 30 TC = 125_C 25_C -55_C 40 3V 2V 0 0 2 4 6 8 10 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 100 TC = -55_C r DS(on) - On-Resistance ( W ) 80 g fs - Transconductance (S) 25_C 60 0.017 0.020 On-Resistance vs. Drain Current 125_C 0.014 VGS = 4.5 V VGS = 10 V 0.008 40 0.011 20 0 0 10 20 30 40 50 60 0.005 0 20 40 60 80 100 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Capacitance 5000 20 Gate Charge 4000 C - Capacitance (pF) Ciss 3000 V GS - Gate-to-Source Voltage (V) 16 VDS = 30 V ID = 75 A 12 2000 8 1000 Crss 0 0 12 24 Coss 4 0 36 48 60 0 20 40 60 80 100 120 VDS - Drain-to-Source Voltage (V) Document Number: 70807 S-59182--Rev. B, 07-Sep-98 Qg - Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB75N06-12L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.0 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) I S - Source Current (A) 1.5 TJ = 150_C 100 Source-Drain Diode Forward Voltage 1.0 10 TJ = 25_C 0.5 0 -50 1 -25 0 25 50 75 100 125 150 175 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Case Temperature 100 300 Limited by rDS(on) 10 ms Safe Operating Area 80 I D - Drain Current (A) I D - Drain Current (A) 100 100 ms 60 40 10 1 ms TC = 25_C Single Pulse 20 10 ms 100 ms dc 10 100 0 0 25 50 75 100 125 150 175 1 0.1 1 TC - Case Temperature (_C) 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70807 S-59182--Rev. B, 07-Sep-98 2-4 |
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