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SFH6941T
LOW CURRENT INPUT MINI OPTOCOUPLER
Preliminary Data Sheet
Package Dimensions in mm
FEATURES
* * * * * * * * * * * * Transistor Optocoupler in SOT223 Package End Stackable, 1.27 mm Spacing Low Current Input Very High CTR, 150% Typical at IF=1 mA, VCE=0.5 V Good CTR Linearity Versus Forward Current Minor CTR Degradation Field Effect Stable by TRIOS(R) (TRansparent IOn Shield) High Collector-Emitter Voltage, VCEO=70 V Low Coupling Capacitance High Common Mode Transient Immunity Isolation Test Voltage: 2500 VDC Available in Tape and Reel (suffix T)
APPLICATIONS * Telecommunication * SMT * PCMCIA * Instrumentation
N
DESCRIPTION
The SFH6941T is a four channel mini-optocoupler suitable for high density packaged PCB application. It has a minimum of 2500 VDC isolation from input to output. The device consists of four phototransistors as detectors. Each channel is individually controlled. The optocoupler is housed in a SOT223 package. All the cathodes of the input LEDs and all the collectors of the output transistors are commoned enabling a pin count reduction from 16 pins to 10 pins--a significant space savings as compared to four channels that are electrically isolated individually. Absolute Maximum Ratings Emitter (GaAlAs) Reverse Voltage..................................................................... 3 V DC Forward Current............................................................ 5 mA Surge Forward Current (tP10 s) .................................. 100 mA Total Power Dissipation.................................................... 10 mW Detector (Si Phototransistor) Collector-Emitter Voltage .................................................... 70 V Emitter-Collector Voltage ....................................................... 7 V Collector Current............................................................... 10 mA Surge Collector Current (tP1 ms) .................................... 20 mA Total Power Dissipation.................................................... 20 mW Package Insulation Isolation Test Voltage (between emitter and detector, refer to climate DIN 40046, part 2, Nov. 74)............ 2500 VDC Creepage ..........................................................................4 mm Clearance..........................................................................4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1......................................175 Isolation Resistance VIO=100 V, TA=25C ...................................................1011 VIO=100 V, TA=100C .................................................1010 Storage Temperature Range ............................... -55 to +150C Ambient Temperature Range............................... -55 to +100C Junction Temperature ........................................................100C Soldering Temperature (t=10 sec. max.) ..........................260C Dip soldering plus reflow soldering processes
Specifications subject to change.
Semiconductor Group
4-51
10.95
This document was created with FrameMaker 4.0.3
Characteristics (TA=25C, unless otherwise specified)
Description Emitter (IR GaAs) Forward Voltage, IF=5 mA Reverse Current, VR=3 V Capacitance, VR=0 V, f=1 MHz Thermal Resistance Detector (Si Phototransistor) Collector-Emitter Voltage, ICE=10 A Emitter-Collector Voltage, IEC=10 A Capacitance, VCE=5 V, f=1 MHz Thermal Resistance Package Coupling Capacitance CC 1 pF VCEO VECO CCE RthJA 70 7 6 500 V V pF K/W VF IR C0 RthJA 1.25 0.01 5 1000 10 V A pF K/W Symbol Min. Typ. Max. Unit
Values Description Coupling Transfer Ratio IF=1 mA, VCE=0.5 V IF=0.5 mA, VCE=1.5 V Collector-Emitter Saturation Voltage IF=1 mA Collector-Emitter Leakage Current VCE=10 V Symbol -3 -4 -5 Unit
IC/ IF IC/ IF VCEsat ICEO
100-200 120 (50) 0.25 (0.4) (IC=0.5 mA) 50
160-320 200 (80) 0.25 (0.4) (IC=0.8 mA) 50
250-500 300 (125) 0.25 (0.4) (IC=1.25 mA) 50
%
V
nA
Switching times, typical IF RL GND IC
47
VCC
Description Turn-on Time Rise Time Turn-off Time Fall Time
Symbol ton tr toff tf
Values 3 2.6 3.1 2.8
Unit
Test Conditions
s
IF=2 mA RL=100 TA=25C VCC=5 V
SFH6941T Semiconductor Group 4-52
LED current versus LED voltage VF=f(IF)
85 50 2 5 -2 5
Saturated current transfer ratio normalized to IIF=1 mA, NCTR=f(IF)
2.0 1.8 1.6 VCE=0.5V T A = 2 5C I F =1mA
Non-saturated current transfer normalized to IIF=1 mA, NCTR=f(IF)
2.0 1.8 1.6 1.4 1.2 NCTR 1.0 .8 .6 .4 .2 VCE=1.5V T A = 2 5C I F =1mA
101
100
1.4 1.2
IF/mA
NCTR 10 -1
1.0 .8 .6 .4 .2
10 -2
.8
.9
1 1.1 VF/V
1.2 1.3 1.4
0 10-4 IF/A
10-3
10-2
0 10-4 IF/A
10-3
1 0 -2
Transistor output characteristics TA=25C, ICE=f(VCE, IF)
25
Transistor capacitance (typ.) TA=25C, f=1MHz, CCE=f(VCE)
25.0 22.5
Collector-emitter leakage current (typ.) IF=0, TA=25C, ICEO=f(VCE)
10 3
20
I F =5mA
20.0 17.5
10 2
101
15 ICE/mA
I F =4mA
CCE/PF
15.0 12.5 10.0 7.5 5.0
10
I F =3mA I F =2mA
ICEO/nA 10 0 101 102
CCE
100
10 -1
5
I F =1mA
0 10-2 10-1 100 VCE/V 101 102
10 -2
2.5 0
10 -2
10 -1
10 -3
0
10
20 30 40 VCE/ V
50 60 70
VCE/V
Permissible forward current diode IF=f(TA=25C)
8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90 100 TA/C
Permissible power dissipation Ptot=f(TA)
30
TA=25C, IF=1 mA, VCC=5 V, ton, tr, toff, tt=f(RL)
103
25
10
Transistor 20
toff tf
15 Ptot/mW
IF/mA
t / us
ton 101 tr
Diode 10
5
0 0 10 20 30 40 50 60 70 80 90 100 T A / C
100 102
103 RL/OHM
104
105
SFH6941T Semiconductor Group 4-53

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