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| Preliminary data SPD08N05L SPU08N05L SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * dv/dt rated * 175C operating temperature Type SPD08N05L SPU08N05L VDS 55 V 55 V ID 8.4 A 8.4 A RDS(on) 0.18 0.18 Package P-TO252 P-TO251 Ordering Code Q67000-. . . . - . . Q67000-. . . . - . . Maximum Ratings Parameter Continuous drain current Symbol Values 8.4 5.9 Unit A ID TC = 25 C TC = 100 C Pulsed drain current IDpuls 34 TC = 25 C Avalanche energy, single pulse EAS 35 mJ ID = 8.4 A, VDD = 25 V, RGS = 25 L = 992 H, Tj = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IAR EAR dv/dt 8.4 2.4 A mJ kV/s IS = 8.4 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C Gate source voltage Power dissipation 6 VGS Ptot 14 24 V W TC = 25 C Semiconductor Group 1 16/Oct/1997 Preliminary data SPD08N05L SPU08N05L Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 ** when mounted on 1 " square PCB ( FR4 );for recommended footprint Symbol Values -55 ... + 175 6.25 50 100 55 / 175 / 56 Unit Tj Tstg RthJC RthJA -55 ... + 175 C K/W Thermal resistance, junction - ambient (PCB mount)** RthJA Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 55 1.6 0.1 10 0.13 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 10 A Zero gate voltage drain current IDSS 0.1 1 100 A VDS = 50 V, VGS = 0 V, Tj = -40 C VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS 100 nA 0.18 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 4.5 V, ID = 5.9 A Semiconductor Group 2 16/Oct/1997 Preliminary data SPD08N05L SPU08N05L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 3 6.2 250 80 45 - S pF 315 100 56 ns 10 15 VDS 2 * ID * RDS(on)max, ID = 5.9 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 4.5 V, ID = 8.4 A RG = 25 Rise time tr 70 105 VDD = 30 V, VGS = 4.5 V, ID = 8.4 A RG = 25 Turn-off delay time td(off) 14 22 VDD = 30 V, VGS = 4.5 V, ID = 8.4 A RG = 25 Fall time tf 14 0.25 5 9 4 22 nC 0.38 7.5 14 V - VDD = 30 V, VGS = 4.5 V, ID = 8.4 A RG = 25 Gate charge at threshold Qg(th) Qg(5) - VDD = 40 V, ID = 0.1 A, VGS =0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 8.4 A, VGS =0 to 5 V Gate charge total Qg(total) - VDD = 40 V, ID = 8.4 A, VGS =0 to 10 V Gate plateau voltage V(plateau) VDD = 40 V, ID = 8.4 A Semiconductor Group 3 16/Oct/1997 Preliminary data SPD08N05L SPU08N05L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 1.05 50 0.085 8.4 34 V 1.8 ns 75 C 0.13 Values typ. max. Unit TC = 25 C Inverse diode direct current,pulsed ISM - TC = 25 C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 16.8 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 16/Oct/1997 Preliminary data SPD08N05L SPU08N05L Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 4 V 9 A 26 W 22 Ptot 20 18 16 14 12 10 8 6 4 ID 7 6 5 4 3 2 1 2 0 0 20 40 60 80 100 120 140 C 180 0 0 20 40 60 80 100 120 140 C 180 TC TC Semiconductor Group 5 16/Oct/1997 Preliminary data SPD08N05L SPU08N05L Typ. output characteristics ID = (VDS) parameter: tp = 80 s 19 A 16 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.55 a g VGS [V] a 2.5 Ptot = 24W lk ij h b c d e 0.45 RDS (on) 0.40 0.35 0.30 0.25 0.20 0.15 0.10 VGS [V] = b f g hi j k c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i 6.5 7.0 j 8.0 k 10.0 ID 14 12 e f b c d e 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 10 8 6 4 2 c f g h di j k l 0.05 V 5.0 0.00 0 a 2.5 3.0 b 3.5 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 4 6 8 10 12 A 16 VDS ID Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 30 A ID 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 16/Oct/1997 Preliminary data SPD08N05L SPU08N05L Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 5.9 A, VGS = 4.5 V 0.50 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 10 A 4.6 V 4.0 RDS (on)0.40 0.35 0.30 0.25 0.20 VGS(th) 3.6 3.2 2.8 98% 2.4 98% 2.0 typ 0.15 typ 1.6 2% 1.2 0.10 0.05 0.00 -60 0.8 0.4 -20 20 60 100 C 180 0.0 -60 -20 20 60 100 C 180 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 2 A C pF Ciss IF 10 1 10 2 Coss 10 0 Crss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 5 10 15 20 25 30 V 40 VDS 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 16/Oct/1997 Preliminary data SPD08N05L SPU08N05L Avalanche energy EAS = (Tj) parameter: ID = 8.4 A, VDD = 25 V RGS = 25 , L = 992 H 36 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 8 A 16 V EAS 28 24 VGS 12 10 20 8 16 6 12 8 4 0 20 4 0,2 VDS max 0,8 VDS max 2 0 0 40 60 80 100 120 140 C 180 2 4 6 8 10 nC 13 Tj QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 16/Oct/1997 Preliminary data SPD08N05L SPU08N05L Package Outlines P-TO252 Dimension in mm P-TO251 Dimension in mm Semiconductor Group 9 16/Oct/1997 |
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