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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHPM6B5A120D/D
Hybrid Power Module
Integrated Power Stage for 460 VAC Motor Drives
These VersaPowerTM modules integrate a 3-phase inverter in a single convenient package. They are designed for 1.0, 2.0 and 3.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user's control board. * Short Circuit Rated 10 s @ 125C, 600 V * Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) * Compact Package Outline * Access to Positive and Negative DC Bus Recognized * UL * Visit our website at http://www.mot-sps.com/tsg/
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
Motorola Preferred Devices
5.0, 10, 15 AMP, 1200 V HYBRID POWER MODULES
MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted)
Rating IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 5A120 10A120 15A120 Symbol VCES VGES ICmax
CASE 464-03 ISSUE B
Value 1200 20 5.0 10 15 10 20 30 5.0 10 15 10 20 30 43 65 82 19 38 38 19 29 36 8.3 17 17 - 40 to +150 10 Unit V V A
Repetitive Peak IGBT Collector Current (1)
IC(pk)
A
Continuous Free-Wheeling Diode Current
IFmax
A
Repetitive Peak Free-Wheeling Diode Current (1)
IF(pk)
A
IGBT Power Dissipation per die (TC = 25C)
PD
W
Diode Power Dissipation per die (TC = 25C)
PD
W
IGBT Power Dissipation per die (TC = 95C)
PD
W
Diode Power Dissipation per die (TC = 95C)
PD
W
Junction Temperature Range Short Circuit Duration (VCE = 600 V, TJ = 125C) (1) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
TJ tsc
C
ms
VersaPower is a trademark of Motorola, Inc.
REV 2
Motorola IGBT Device (c) Motorola, Inc. 1998
Data
1
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted) -- continued
Rating Isolation Voltage Operating Case Temperature Range Storage Temperature Range Mounting Torque -- Heat Sink Mounting Holes (#8 or M4 screws) Symbol VISO TC Tstg -- Value 2500 - 40 to +95 - 40 to +125 12 Unit Vac C C lb-in
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic DC AND SMALL SIGNAL CHARACTERISTICS Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) TJ = 125C Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) TJ = 125C Diode Forward Voltage (IF = IFmax, VGE = 0 V) TJ = 125C Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz) 5A120 10A120 15A120 IGES ICES VGE(th) V(BR)CES VCE(SAT) VF Cies -- -- 4.0 1200 -- -- -- -- -- -- -- -- -- -- -- 6.0 2000 6.0 -- 2.54 2.33 1.67 1.31 930 1840 2800 31 65 100 20 100 8.0 -- 3.5 -- 2.0 -- -- -- -- -- -- -- A A V V V V pF Symbol Min Typ Max Unit
Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)5A120 10A120 15A120
QT
nC
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25C)
Recommended Gate Resistor Turn-On 5A120 10A120 15A120 RG(on) -- -- -- -- 270 220 220 20 -- -- -- --
W
Turn-Off Turn-On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 Turn-Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) Turn-On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 Turn-Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 Diode Reverse Recovery Time (IF = IFmax, V = 600 V, RG as specified) 5A120 10A120 15A120
RG(off) td(on)
ns -- -- -- 255 350 425 -- -- -- ns -- -- -- 140 250 225 170 290 0.96 2.8 4.0 0.15 0.39 0.52 130 170 165 -- -- -- ns -- -- 500 -- -- -- mJ -- -- -- 1.0 2.0 2.5 ns -- -- -- -- -- -- ns mJ -- -- -- --
tr
td(off) tf Eon
Eoff
trr
2
Motorola IGBT Device Data
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
Characteristic Symbol Min Typ Max Unit
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25C) - continued
Peak Reverse Recovery Current (IF = IFmax, V = 600 V, RG as specified) Irrm 5A120 10A120 15A120 Qrr 5A120 10A120 15A120 -- -- -- 335 575 860 -- -- -- -- -- -- 5.0 6.0 9.6 -- -- -- nC A
Diode Stored Charge (IF = IFmax, V = 600 V, RG as specified)
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125C)
Turn-On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 Turn-Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) Turn-On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 Turn-Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified) 5A120 10A120 15A120 Diode Reverse Recovery Time (IF = IFmax, V = 600 V, RG as specified) trr 5A120 10A120 15A120 Irrm 5A120 10A120 15A120 Qrr 5A120 10A120 15A120 -- -- -- 825 2100 2500 -- -- -- -- -- -- 8.4 10 15 -- -- -- nC -- -- -- 190 375 310 -- -- -- A Eoff -- -- -- 0.711 1.290 1.939 -- -- -- ns td(off) -- tf -- Eon -- -- -- 1.3 3.9 5.5 -- -- -- mJ 676 -- mJ 176 -- ns tr -- -- -- 130 220 235 -- -- -- ns td(on) -- -- -- 230 315 375 -- -- -- ns ns
Peak Reverse Recovery Current (IF = IFmax, V = 600 V, RG as specified)
Diode Stored Charge (IF = IFmax, V = 600 V, RG as specified)
THERMAL CHARACTERISTICS (Each Die)
Thermal Resistance -- IGBT 5A120 10A120 15A120 5A120 10A120 15A120 RqJC -- -- -- -- -- -- 2.30 1.54 1.21 5.28 2.61 2.61 2.88 1.92 1.52 6.60 3.26 3.26 C/W
Thermal Resistance -- Free-Wheeling Diode
RqJC
C/W
Motorola IGBT Device Data
3
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
TYPICAL CHARACTERISTICS
(see also application information) 2.0 TJ = 125C IF, FORWARD CURRENT (NORMALIZED: IF/IFmax ) 1.5 25C 2.0
VGE = 18 V
12 V
IC , COLLECTOR CURRENT (NORMALIZED: I C /I Cmax)
1.5 15 V 1.0 TJ = 25C 0.5 9.0 V
1.0
0.5
0 0 0.5 1.0 1.5 2.0 2.5 VF, FORWARD VOLTAGE (VOLTS)
0 0 1.0 2.0 3.0 4.0 5.0 6.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Forward Characteristics -- Free-Wheeling Diode
Figure 2. Forward Characteristics, TJ = 25C
2.0
15 VGE, GATE-EMITTER VOLTAGE (VOLTS) VGE = 18 V 12 V
5A120
10A120 15A120
IC , COLLECTOR CURRENT (NORMALIZED: IC /I Cmax )
1.5 15 V TJ = 125C
10
1.0
0.5
9.0 V
5.0 VCE = 500 V 0
0 0 1.0 2.0 3.0 4.0 5.0 6.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
20
40
60
80
100
120
140
Qg, TOTAL GATE CHARGE (nC)
Figure 3. Forward Characteristics, TJ = 125C
Figure 4. Gate-Emitter Voltage versus Total Gate Charge
1000 TJ = 125C, 800 toff t, TIME (ns) tf toff tf VCE = 600 V, VGE = 15 V, RG(off) = 20 W 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 td(off) td(off) 1.8 2.0 2.2 TJ = 25C
1400 1200 1000 800 600 toff 400 200 0 0 td(off) 20 40 60 80 100 120 tf td(off) toff tf TJ = 125C TJ = 25C
t, TIME (ns)
600
VCE = 600 V VGE = 15 V IC = ICmax
400
200 0
IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax)
RG(off), GATE RESISTANCE (OHMS)
Figure 5. Inductive Switching Times versus Collector Current 4
Figure 6. Inductive Switching Times versus Gate Resistance Motorola IGBT Device Data
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
TYPICAL CHARACTERISTICS
(see also application information) 10 t, TIME (NORMALIZED: TIME/t r(typ) ) t, TIME (NORMALIZED: TIME/t r(typ) ) VCE = 600 V, VGE = 15 V RG(on) = RG(on)(RECOMMENDED) ton 10 ton td(on) tr 1.0
1.0
td(on)
tr TJ = 125C TJ = 25C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax)
VCE = 600 V VGE = 15 V IC = ICmax 0.1 0 0.5
TJ = 125C TJ = 25C
1.0 1.5 2.0 2.5 RG(on), GATE RESISTANCE (NORMALIZED: RG/RG(on)(RECOMMENDED)
3.0
Figure 7. Inductive Switching Times versus Collector Current
Figure 8. Inductive Switching Times versus Gate Resistance
6.0 Eoff , TURN-OFF ENERGY LOSSES (mJ) E on , TURN-ON AND E off , TURN-OFF ENERGY LOSSES (mJ) Eon 5.0 4.0 Eon 3.0 Eoff 2.0 1.0 0 0 4.0 8.0 12 16 20 24 28 32 36 40 IC, COLLECTOR CURRENT (AMPS) Eoff TJ = 125C TJ = 25C VCE = 600 V, VGE = 15 V RG = RG(RECOMMENDED)
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 RG(off), GATE RESISTANCE (OHMS) VCE = 600 V VGE = 15 V IC = ICmax TJ = 125C
25C
Figure 9. Turn-On and Turn-Off Energy Losses versus Collector Current
E on , TURN-ON ENERGY LOSSES (NORMALIZED: E on /E on @ 25 C WITH RECOMMENDED RG(on))
Figure 10. Turn-Off Energy Losses versus Gate Resistance
TJ = 125C 1.5 25C
Irr , PEAK REVERSE RECOVERY CURRENT t rr, REVERSE RECOVERY TIME (NORMALIZED: t rr /t rr(typ), 10 * I rr /I rr(typ))
2.0
10 Irr
1.0
1.0
trr
0.5
VCE = 600 V VGE = 15 V IC = ICmax 0 0.5 1.0 1.5 2.0 RG(on), GATE RESISTANCE (NORMALIZED: RG(on)/RG(on)(RECOMMENDED))
V = 600 V 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
TJ = 125C TJ = 25C 1.8 2.0 2.2
0 2.5
IF, FORWARD CURRENT (NORMALIZED: IF/IFmax)
Figure 11. Turn-On Energy Losses versus Gate Resistance Motorola IGBT Device Data
Figure 12. Reverse Recovery Characteristics -- Free-Wheeling Diode 5
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
TYPICAL CHARACTERISTICS
(see also application information) 1000 IC , COLLECTOR CURRENT (AMPS) Cies 50 +VGE = 15 V -VGE = 0 V RG = RECOMMENDED RG(on) TJ = 25C 15A120
C, CAPACITANCE (NORMALIZED TO I Cmax (pF/A))
100 Coes 10 Cres 1.0
40
30
20
10A120
10 0
5A120
0.1 0 20 40 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
200
400
600
800
1000
1200
1400
1600
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Capacitance Variation
Figure 14. Reverse Biased Safe Operating Area (RBSOA)
1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 10A120 DIODE 0.8 15A120 DIODE 5A120 DIODE 15A120 IGBT 0.4 10A120 IGBT 5A120 IGBT 15A120 IGBT 10A120 IGBT
0.6
0.2 0
0.01
0.1
1.0
10 t, TIME (ms)
100
1,000
10,000
Figure 15. Thermal Response
+15 V MBRS130LT3 ton td(on) OUTPUT, Vout INVERTED 10% 90% INPUT, Vin 50% 10% PULSE WIDTH 50% MBRS130LT3 tr 90% td(off) 90% RG(off) toff tf MC33153 RG(on)
MBRS130LT3
Figure 16. Switching Waveforms
Figure 17. Recommended Gate Drive Circuit
6
Motorola IGBT Device Data
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
APPLICATION INFORMATION
These modules are designed to be used as the power stage of a three-phase AC induction motor drive. They may be used for up to 460 VAC applications. Switching frequencies up to 10 kHz have been considered in the design. Gate resistance recommendations have been listed. Separate turn-on and turn-off resistors are listed, to be used in a circuit resembling Figure 17. All switching characteristics are given based on following these recommendations, but appropriate graphs are shown for operation with different gate resistance. In order to equalize across the three different module ratings, a normalization process was used. Actual typical values are listed in the second section of this specification sheet, "Electrical Specifications," but many of the graphs are given in normalized units. The first three graphs, the DC characteristics, are normalized for current. The devices are designed to operate the same at rated maximum current (5.0, 10 and 15 A). The curves extend to IC(pk), the maximum allowable instantaneous current. The next graph, turn-off times versus current, is again normalized to the rated maximum current. The following graph, turn-off times versus RG(off), is intentionally not normalized, as all three modules behave similarly during turn-off. Turn-on times have been normalized. Again, the graph showing variation due to current has been normalized for rated maximum current. The graph showing variation due to gate resistance normalizes against the recommended RG(on) for each module. In addition, the times are normalized to tr at the appropriate temperature. For example, td(on) for a 10 A module operating at 125C at 4.0 A can be found by multiplying the typical tr for a 10 A module at 125C (220 ns) by the value shown on the graph at a normalized current of 0.4 (1.4) to get 308 ns. The most salient features demonstrated by these graphs are the general trends: rise time is a larger fraction of total turn-on time at 125C, and in general, larger gate resistance results in slower switching. Graphs of switching energies follow a similar structure. The first of these graphs, showing variation due to current, is not normalized, as any of these devices operating within its limits follows the same trend. Eoff does not need to be normalized to show variation with RG(off), as all three are specified with the same nominal resistance. Eon, however, has been appropriately normalized. Gate resistance has been normalized to the recommended RG(on). In order to show the effect of elevated temperature, all energies were normalized to Eon at 25C using the recommended RG(on). Reverse recovery characteristics are also normalized. IF is normalized to rated maximum current. Irrm is normalized so that at maximum current at either 25C or 125C, the graph indicates "10", while trr is normalized to be "1" at maximum current at either temperature. Capacitance values are normalized for ICmax. Due to poor scaling, gate charge and thermal characteristics are shown separately for each module. Many issues must be considered when doing PCB layout. Figure 19 shows the footprint of a module, allowing for reasonable tolerances. A polarizing post is provided near pin 1 to ensure that the module is properly inserted during final assembly. When laying out traces, two issues are of primary importance: current carrying capacity and voltage clearance. Many techniques may be used to maximize both, including using traces on both sides of the PCB to double total copper thickness, providing cut-outs in high-current traces near high-voltage pins, and even removing portions of the board to increase "over-the-surface" creapage distance. Some additional advantage may be gained by potting the entire board assembly in a good dielectric. Consult appropriate regulatory standards, such as UL 840, for more details on high- voltage creapage and clearance.
1
2
3
4
5
6
7
8
Q1
D1
Q3
D3
Q5
D5
Q2
D2
Q4
D4
Q6
D6
16
15
14
13
12
11
10
9
Figure 18. Schematic of Internal Circuit, Showing Package Pin-Out
Motorola IGBT Device Data
7
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
RECOMMENDED PCB LAYOUT VIEW OF BOARD FROM HEAT SINK (All Dimensions Typical) NON-PLATED THRU-HOLE 0.140 0.265 KEEP-OUT ZONES (x4) 0.270
0.175
0.250
0.625 0.270 PIN 1
PLATED THRU-HOLES (x16)
0.065 0.250 3.500
PACKAGE "SHADOW"
0.450
0.625
0.175
0.175
1.350 1.530
OPTIONAL NON-PLATED THRU-HOLES FOR ACCESS TO HEAT SINK MOUNTING SCREWS (x2)
Figure 19. Package Footprint
NOTE: 1. Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non-plated thru-hole in the footprint. 2. Dimension of plated thru-holes indicates net size after plating. 3. Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.
8
Motorola IGBT Device Data
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
PACKAGE DIMENSIONS
A AA U Q 3 PL Y 2 PL
1 2 3 4 5 6 7 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H ...) ARE TO THE CENTER OF THE LEAD. MILLIMETERS MIN MAX 88.39 89.41 38.35 39.37 12.32 13.59 0.89 1.65 8.64 9.65 0.13 0.64 5.97 6.73 33.91 34.67 0.41 1.22 16.26 17.27 3.71 4.72 5.46 6.48 10.92 11.94 24.89 25.91 2.01 2.62 16.76 17.53 15.49 16.26 75.69 76.71 55.88 57.15 29.97 30.99 5.26 5.77 11.30 12.07 2.29 2.79 16.26 17.27 INCHES MIN MAX 3.480 3.520 1.510 1.550 0.485 0.535 0.035 0.065 0.340 0.380 0.005 0.025 0.235 0.265 1.335 1.365 0.016 0.048 0.640 0.680 0.146 0.186 0.215 0.255 0.430 0.470 0.980 1.020 0.079 0.103 0.660 0.690 0.610 0.640 2.980 3.020 2.200 2.250 1.180 1.220 0.207 0.227 0.445 0.475 0.090 0.110 0.640 0.680
J
BPN R
16 15 14 13 12 11 10 9
H F DETAIL Z
16 PL
S D 16 PL
G 14 PL
M 4 PL DETAIL Z
AB
CX
K E L W
V
DIM A B C D E F G H J K L M N P Q R S U V W Y X AA AB
CASE 464-03 ISSUE B
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
MHPM6B5A120D/D
9

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