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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHPM6B10A60D/D
Hybrid Power Module
Integrated Power Stage for 230 VAC Motor Drives
These VersaPowerTM modules integrate a 3-phase inverter in a single convenient package. They are designed for 1.0 and 2.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user's control board. * Short Circuit Rated 10 s @ 25C, 300 V * Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) * Compact Package Outline * Access to Positive and Negative DC Bus Recognized * UL * Visit our website at http://www.mot-sps.com/tsg/
MHPM6B10A60D MHPM6B20A60D
Motorola Preferred Devices
10, 20 AMP, 600 V HYBRID POWER MODULES
CASE 464-03 ISSUE B
MAXIMUM DEVICE RATINGS (TJ = 25C unless otherwise noted)
Rating IGBT Reverse Voltage Gate-Emitter Voltage Continuous IGBT Collector Current Repetitive Peak IGBT Collector Current (1) Continuous Free-Wheeling Diode Current Repetitive Peak Free-Wheeling Diode Current (1) IGBT Power Dissipation (TC = 25C) Diode Power Dissipation (TC = 25C) IGBT Power Dissipation (TC = 95C) Diode Power Dissipation (TC = 95C) Junction Temperature Range Short Circuit Duration (VCE = 300 V, TJ = 25C) Isolation Voltage Operating Case Temperature Range Storage Temperature Range Mounting Torque -- Heat Sink Mounting Holes (#8 or M4 screws) (1) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol VCES VGES 10A60 20A60 10A60 20A60 10A60 20A60 10A60 20A60 10A60 20A60 10A60 20A60 10A60 20A60 10A60 20A60 ICmax IC(pk) IFmax IF(pk) PD PD PD PD TJ tsc VISO TC Tstg --
Value 600 20 10 20 20 40 10 20 20 40 52 78 19 38 23 34 8.3 17 - 40 to +150 10 2500 - 40 to +95 - 40 to +125 12
Unit V V A A A A W W W W C
ms
Vac C C in-lb
VersaPower is a trademark of Motorola, Inc.
REV 2
(c) Motorola, Inc. 1998
Motorola IGBT Device Data
1
MHPM6B10A60D MHPM6B20A60D
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
DC AND SMALL SIGNAL CHARACTERISTICS
Gate-Emitter Leakage Current (VCE = 0 V, VGE = 20 V) Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V) TJ = 125C Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) TJ = 125C Diode Forward Voltage (IF = IFmax, VGE = 0 V) TJ = 125C Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz) 10A60 20A60 Input Gate Charge (VCE = 300 V, IC = ICmax, VGE = 15 V) 10A60 20A60 IGES ICES VGE(th) V(BR)CES VCE(SAT) VF Cies -- -- QT -- -- 75 135 -- -- 2300 4400 -- -- nC -- -- 4.0 600 -- -- -- -- -- 6.0 2000 6.0 -- 2.35 2.31 1.23 1.12 20 100 8.0 -- 3.5 -- 2.0 -- A A V V V V pF
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25C)
Recommended Gate Resistor Turn-On Turn-Off Turn-On Delay Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Rise Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Turn-Off Delay Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) Fall Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) Turn-On Energy (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Turn-Off Energy (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Diode Reverse Recovery Time (IF = IFmax, V = 300 V, RG as specified) Peak Reverse Recovery Current (IF = IFmax, V = 300 V, RG as specified) Diode Stored Charge (IF = IFmax, V = 300 V, RG as specified) 10A60 20A60 Qrr 10A60 20A60 -- -- 560 1060 -- -- 10A60 20A60 RG(on) RG(off) td(on) -- -- tr -- -- td(off) -- tf -- Eon -- -- Eoff -- -- trr -- Irrm -- -- 6.8 12 -- -- 150 -- 0.17 0.4 1.0 2.0 0.85 1.6 1.0 2.0 210 500 219 -- 160 125 -- -- 375 215 -- -- -- -- -- 180 47 20 -- -- --
W
ns
ns
ns ns mJ
mJ
ns A
nC
2
Motorola IGBT Device Data
MHPM6B10A60D MHPM6B20A60D
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125C)
Characteristic Turn-On Delay Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Rise Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Turn-Off Delay Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) Fall Time (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) Turn-On Energy (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Turn-Off Energy (VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified) 10A60 20A60 Diode Reverse Recovery Time (IF = IFmax, V = 300 V, RG as specified) Peak Reverse Recovery Current (IF = IFmax, V = 300 V, RG as specified) Diode Stored Charge (IF = IFmax, V = 300 V, RG as specified) 10A60 20A60 Qrr 10A60 20A60 -- -- 1330 2400 -- -- Symbol td(on) -- -- tr -- -- td(off) -- tf -- Eon -- -- Eoff -- -- trr -- Irrm -- -- 10 18 -- -- nC 240 -- A 0.44 0.82 -- -- ns 1.2 2.2 -- -- mJ 460 -- mJ 230 -- ns 160 125 -- -- ns 335 200 -- -- ns Min Typ Max Unit ns
THERMAL CHARACTERISTICS (Each Die)
Thermal Resistance -- IGBT Thermal Resistance -- Free-Wheeling Diode 10A60 20A60 10A60 20A60 RqJC RqJC -- -- -- -- 1.94 1.28 5.28 2.61 2.43 1.60 6.60 3.26 C/W C/W
Motorola IGBT Device Data
3
MHPM6B10A60D MHPM6B20A60D
TYPICAL CHARACTERISTICS
(see also application information) 2.0 2.0 VGE = 18 V IC , COLLECTOR CURRENT (NORMALIZED: I C /I Cmax ) IF, FORWARD CURRENT (NORMALIZED: I F/I Fmax ) 1.5 1.5 12 V 15 V
1.0 TJ = 125C 0.5 25C
1.0 9.0 V 0.5 TJ = 25C
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF, FORWARD VOLTAGE (VOLTS)
0 0 1.0 2.0 3.0 4.0 5.0 6.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Forward Characteristics -- Free-Wheeling Diode
Figure 2. Forward Characteristics, TJ = 25C
2.0 VGE, GATE-EMITTER VOLTAGE (VOLTS) VGE = 18 V IC , COLLECTOR CURRENT (NORMALIZED: I C /I Cmax) 1.5 15 V 12 V
15 VCE = 300 V 10A60 20A60 10
1.0 9.0 V
5.0
0.5
TJ = 125C
0 0 1.0 2.0 3.0 4.0 5.0 6.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0 0 20 40 60 80 100 120 140 Qg, TOTAL GATE CHARGE (nC)
Figure 3. Forward Characteristics, TJ = 125C
Figure 4. Gate-Emitter Voltage versus Total Gate Charge
800 700 600 tf t, TIME (ns) toff t, TIME (ns) 500 400 300 200 100 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax) td(off) tf TJ = 125C TJ = 25C td(off) toff VCE = 300 V, VGE = 15 V RG(off) = 20 W
1400 1200 1000 toff 800 600 toff 400 200 0 0 td(off) 20 40 60 80 100 120 tf td(off) tf TJ = 125C TJ = 25C
VCE = 300 V VGE = 15 V IC = ICmax
RG(off), GATE RESISTANCE (OHMS)
Figure 5. Inductive Switching Times versus Collector Current 4
Figure 6. Inductive Switching Times versus Gate Resistance Motorola IGBT Device Data
MHPM6B10A60D MHPM6B20A60D
TYPICAL CHARACTERISTICS
(see also application information) 10 t, TIME (NORMALIZED: TIME/t r(typ)) t, TIME (NORMALIZED: TIME/t r(typ)) VCE = 300 V, VGE = 15 V RG(on) = RG(on)(RECOMMENDED) ton 10 ton td(on) tr 1.0
1.0
td(on) tr tr TJ = 125C TJ = 25C
VCE = 300 V VGE = 15 V IC = ICmax 0 0 0.5
TJ = 125C TJ = 25C 3.0
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax)
1.0 1.5 2.0 2.5 RG(on), GATE RESISTANCE (NORMALIZED: RG/RG(on)(RECOMMENDED))
Figure 7. Inductive Switching Times versus Collector Current
Figure 8. Inductive Switching Times versus Gate Resistance
2.5 E on , TURN-ON AND E off , TURN-OFF ENERGY LOSSES (mJ)
Eoff , TURN-OFF ENERGY LOSSES (mJ/A)
Eon
0.05 TJ = 125C TJ = 25C Eon Eoff TJ = 125C 0.04 VCE = 300 V VGE = 15 V IC = ICmax
2.0
1.5 VCE = 300 V, VGE = 15 V RG = RG(RECOMMENDED) Eoff
0.03
1.0
0.02
25C
0.5 0 0 10 20 30
0.01
0 40 50 0 20 40 60 80 100 120 IC, COLLECTOR CURRENT (AMPS) RG(off), GATE RESISTANCE (OHMS)
Figure 9. Turn-On and Turn-Off Energy Losses versus Collector Current
E on , TURN-ON ENERGY LOSSES (NORMALIZED: Eon /E on @ 25 C WITH RECOMMENDED RG(on))
Figure 10. Turn-Off Energy Losses versus Gate Resistance
2.0 TJ = 125C 1.5 25C 1.0 Irr , PEAK REVERSE RECOVERY CURRENT t rr, REVERSE RECOVERY TIME (NORMALIZED: t rr /t rr(typ), 10 * I rr /I rr(typ))
10
Irr
1.0
trr
0.5
VCE = 300 V VGE = 15 V IC = ICmax 0 1.0 1.5 2.0 RG(on), GATE RESISTANCE (NORMALIZED: RG(on)/RG(on)(RECOMMENDED)) 0.5 2.5
V = 300 V 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
TJ = 125C TJ = 25C 1.8 2.0 2.2
0
IF, FORWARD CURRENT (NORMALIZED: IF/IFmax)
Figure 11. Turn-On Energy Losses versus Gate Resistance Motorola IGBT Device Data
Figure 12. Reverse Recovery Characteristics -- Free-Wheeling Diode 5
MHPM6B10A60D MHPM6B20A60D
TYPICAL CHARACTERISTICS
(see also application information) 1000 IC , COLLECTOR CURRENT (AMPS) Cies C, CAPACITANCE (NORMALIZED TO ICmax (pF/A)) 100 Cres 10 50 20A60 40
30 10A60 20 +VGE = 15 V -VGE = 0 V RG = RECOMMENDED RG(on) TJ = 25C 0 100 200 300 400 500 600 700 800
1.0
Coes
10 0
0.1 0 20 40 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Capacitance Variation
Figure 14. Reverse Biased Safe Operating Area (RBSOA)
1.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 20A60 DIODE
0.8
0.6
10A60 DIODE 10A60 IGBT 20A60 IGBT
0.4
0.2 0
0.01
0.1
1.0
10 t, TIME (ms)
100
1,000
10,000
Figure 15. Thermal Response
+15 V MBRS130LT3 ton td(on) OUTPUT, Vout INVERTED 10% 90% INPUT, Vin 50% 10% PULSE WIDTH 50% MBRS130LT3 tr 90% td(off) 90% RG(off) toff tf MC33153 RG(on)
MBRS130LT3
Figure 16. Switching Waveforms
Figure 17. Recommended Gate Drive Circuit
6
Motorola IGBT Device Data
MHPM6B10A60D MHPM6B20A60D
APPLICATION INFORMATION
These modules are designed to be used as the power stage of a three-phase AC induction motor drive. They may be used for up to 230 VAC applications. Switching frequencies up to 10 kHz have been considered in the design. Gate resistance recommendations have been listed. Separate turn-on and turn-off resistors are listed, to be used in a circuit resembling Figure 17. All switching characteristics are given based on following these recommendations, but appropriate graphs are shown for operation with different gate resistance. In order to equalize across the two different module ratings, a normalization process was used. Actual typical values are listed in the second section of this specification sheet, "Electrical Specifications," but many of the graphs are given in normalized units. The first three graphs, the DC characteristics, are normalized for current. The devices are designed to operate the same at rated maximum current (10 and 20 A). The curves extend to IC(pk), the maximum allowable instantaneous current. The next graph, turn-off times versus current, is again normalized to the rated maximum current. The following graph, turn-off times versus RG(off), is intentionally not normalized, as both modules behave similarly during turn- off. Turn-on times have been normalized. Again, the graph showing variation due to current has been normalized for rated maximum current. The graph showing variation due to gate resistance normalizes against the recommended RG(on) for each module. In addition, the times are normalized to tr at the appropriate temperature. For example, td(on) for a 10 A module operating at 125C at 4.0 A can be found by multiplying the typical tr for a 10 A module at 125C (160 ns) by the value shown on the graph at a normalized current of 0.4 (1.6) to get 256 ns. The most salient features demonstrated by these graphs are the general trends: rise time is a larger fraction of total turn-on time at 125C, and in general, larger gate resistance results in slower switching. Graphs of switching energies follow a similar structure. The first of these graphs, showing variation due to current, is not normalized, as any of these devices operating within its limits follows the same trend. Eoff does not need to be normalized to show variation with RG(off), as both are specified with the same nominal resistance. Eon, however, has been appropriately normalized. Gate resistance has been normalized to the recommended RG(on). In order to show the effect of elevated temperature, all energies were normalized to Eon at 25C using the recommended RG(on). Reverse recovery characteristics are also normalized. IF is normalized to rated maximum current. Irrm is normalized so that at maximum current at either 25C or 125C, the graph indicates "10", while trr is normalized to be "1" at maximum current at either temperature. Capacitance values are normalized for ICmax. Due to poor scaling, gate charge and thermal characteristics are shown separately for each module. Many issues must be considered when doing PCB layout. Figure 19 shows the footprint of a module, allowing for reasonable tolerances. A polarizing post is provided near pin 1 to ensure that the module is properly inserted during final assembly. When laying out traces, two issues are of primary importance: current carrying capacity and voltage clearance. Many techniques may be used to maximize both, including using traces on both sides of the PCB to double total copper thickness, providing cut-outs in high-current traces near high-voltage pins, and even removing portions of the board to increase "over-the-surface" creapage distance. Some additional advantage may be gained by potting the entire board assembly in a good dielectric. Consult appropriate regulatory standards, such as UL 840, for more details on high- voltage creapage and clearance.
1
2
3
4
5
6
7
8
Q1
D1
Q3
D3
Q5
D5
Q2
D2
Q4
D4
Q6
D6
16
15
14
13
12
11
10
9
Figure 18. Schematic of Internal Circuit, Showing Package Pin-Out
Motorola IGBT Device Data
7
MHPM6B10A60D MHPM6B20A60D
RECOMMENDED PCB LAYOUT VIEW OF BOARD FROM HEAT SINK (All Dimensions Typical) NON-PLATED THRU-HOLE 0.140 0.265 KEEP-OUT ZONES (x4) 0.270
0.175
0.250
0.625 0.270 PIN 1
PLATED THRU-HOLES (x16)
0.065 0.250 3.500
PACKAGE "SHADOW"
0.450
0.625
0.175
0.175
1.350 1.530
OPTIONAL NON-PLATED THRU-HOLES FOR ACCESS TO HEAT SINK MOUNTING SCREWS (x2)
Figure 19. Package Footprint
NOTE: 1. Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non-plated thru-hole in the footprint. 2. Dimension of plated thru-holes indicates finished hole size after plating. 3. Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.
8
Motorola IGBT Device Data
MHPM6B10A60D MHPM6B20A60D
PACKAGE DIMENSIONS
A AA U Q 3 PL Y 2 PL
1 2 3 4 5 6 7 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: G, S, R, H ...) ARE TO THE CENTER OF THE LEAD. MILLIMETERS MIN MAX 88.39 89.41 38.35 39.37 12.32 13.59 0.89 1.65 8.64 9.65 0.13 0.64 5.97 6.73 33.91 34.67 0.41 1.22 16.26 17.27 3.71 4.72 5.46 6.48 10.92 11.94 24.89 25.91 2.01 2.62 16.76 17.53 15.49 16.26 75.69 76.71 55.88 57.15 29.97 30.99 5.26 5.77 11.30 12.07 2.29 2.79 16.26 17.27 INCHES MIN MAX 3.480 3.520 1.510 1.550 0.485 0.535 0.035 0.065 0.340 0.380 0.005 0.025 0.235 0.265 1.335 1.365 0.016 0.048 0.640 0.680 0.146 0.186 0.215 0.255 0.430 0.470 0.980 1.020 0.079 0.103 0.660 0.690 0.610 0.640 2.980 3.020 2.200 2.250 1.180 1.220 0.207 0.227 0.445 0.475 0.090 0.110 0.640 0.680
J
BPN R
16 15 14 13 12 11 10 9
H F DETAIL Z
16 PL
S D 16 PL
G 14 PL
M 4 PL DETAIL Z
AB
CX
K E L W
V
DIM A B C D E F G H J K L M N P Q R S U V W Y X AA AB
CASE 464-03 ISSUE B
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
MHPM6B10A60D/D
9

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