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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII * Improved Efficiency Due to the Low Base Drive Requirements: -- High and Flat DC Current Gain hFE -- Fast Switching * Robustness Thanks to the Technology Developed to Manufacture this Device * Motorola "6 SIGMA" Philosophy Providing Tight and Reproducible Parametric Distributions Designer's and SWITCHMODE are trademarks of Motorola, Inc. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data The BUH51 has an application specific state-of-art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush current during either the start-up conditions or under a short circuit across the load. This High voltage/High speed product exhibits the following main features: This document contains information on a new product. Specifications and information herein are subject to change without notice. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Advance Information SWITCHMODE NPN Silicon Planar Power Transistor SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds Thermal Resistance -- Junction to Case -- Junction to Ambient Operating and Storage Temperature *Total Device Dissipation @ TC = 25_C *Derate above 25C Base Current -- Continuous Base Current -- Peak (1) Collector Current -- Continuous -- Peak (1) Emitter-Base Voltage Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Rating Symbol TJ, Tstg VCBO VCEO VEBO VCES RJC RJA IC ICM IB IBM PD TL - 65 to 150 POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS Value 260 800 800 500 2.5 100 50 0.4 10 2 4 3 8 BUH51 CASE 77-07 TO-225AA TYPE Order this document by BUH51/D Watt W/_C _C/W Unit Adc Adc Vdc Vdc Vdc Vdc _C _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I I I I I I I 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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I I II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I BUH51 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) DYNAMIC CHARACTERISTICS DYNAMIC SATURATION VOLTAGE ON CHARACTERISTICS OFF CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 5 Vdc) DC Current Gain (IC = 0.8 Adc, VCE = 5 Vdc) DC Current Gain (IC = 2 Adc, VCE = 5 Vdc) Dynamic Saturation Voltage: Determined 3 s after rising IB1 reaches 90% of final IB1 Base-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) Collector Base Current (VCB = Rated VCBO, VEB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Input Capacitance (VEB = 8 Vdc, f = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) Current Gain Bandwidth (IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz) DC Current Gain (IC = 1 Adc, VCE = 1 Vdc) Collector-Emitter Saturation Voltage (IC = 1 Adc, IB = 0.2 Adc) Emitter-Cutoff Current (VEB = 9 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Emitter-Base Breakdown Voltage (IEBO = 1 mA) Collector-Base Breakdown Voltage (ICBO = 1 mA) Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) IC = 2 Adc, IB1 = 0.4 Adc VCC = 300 V IC = 1 Adc, IB1 = 0.2 Adc VCC = 300 V Characteristic @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C VCEO(sus) VCE(dsat) VCE(sat) VBE(sat) Symbol VCBO VEBO ICBO ICEO IEBO ICES Cob hFE Cib fT Min 800 500 10 14 18 10 8 8 6 5 4 0.3 0.32 0.92 0.8 12.5 Typ 200 950 550 5.1 1.7 7.5 6.2 34 23 15 10 8 20 25 14 13 6 100 1000 100 1000 Max 500 100 100 100 0.5 0.6 1.1 Adc Adc Adc Adc MHz Unit Vdc Vdc Vdc Vdc Vdc pF pF -- -- -- -- V V V V 2 Motorola Bipolar Power Transistor Device Data IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I I I II I I I IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I I I I 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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 s) Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-off Time Turn-on Time Turn-off Time Turn-on Time IC = 2 Adc, IB1 = 0.4 Adc IB2 = 0.4 Adc VCC = 300 Vdc IC = 1 Adc, IB1 = 0.2 Adc IB2 = 0.2 Adc VCC = 300 Vdc Characteristic IC = 2 Adc IB1 = 0.4 Adc IB2 = 0.4 Adc IC = 1 Adc IB1 = 0.2 Adc IB2 = 0.2 Adc @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C @ TC = 25C @ TC = 125C Symbol ton ton toff toff tsi tsi tc tc tfi tfi Min 700 1250 1.75 2.1 Typ 400 725 140 300 350 640 200 320 110 125 2.3 2.8 3.4 4 3.5 4.1 1000 2.75 3.75 Max 600 200 500 300 150 2 4 Motorola Bipolar Power Transistor Device Data hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 100 10 1 0.001 TJ = - 20C TJ = 125C Figure 1. DC Current Gain @ 1 Volt 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 25C TYPICAL STATIC CHARACTERISTICS VCE = 1 V 10 100 10 1 0.001 TJ = - 20C TJ = 125C Figure 2. DC Current Gain @ 3 Volt 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) TJ = 25C VCE = 3 V BUH51 Unit s s s s ns ns ns ns ns ns 3 10 BUH51 TYPICAL STATIC CHARACTERISTICS 100 VCE = 5 V hFE , DC CURRENT GAIN VCE , VOLTAGE (VOLTS) 10 IC/IB = 5 TJ = 125C 1 TJ = 25C TJ = - 20C 0.1 TJ = 125C 10 TJ = - 20C TJ = 25C 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 10 Figure 3. DC Current Gain @ 5 Volt Figure 4. Collector-Emitter Saturation Voltage 10 IC/IB = 10 VCE , VOLTAGE (VOLTS) VBE , VOLTAGE (VOLTS) 1.5 IC/IB = 5 1 TJ = - 20C 1 TJ = 25C TJ = - 20C TJ = 125C 0.5 TJ = 25C TJ = 125C 0.1 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 0 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Region 1.5 IC/IB = 10 2 TJ = 25C 4A VCE , VOLTAGE (VOLTS) 1.5 2A 1A 1 3A VBE , VOLTAGE (VOLTS) 1 TJ = - 20C TJ = 25C TJ = 125C 0.5 0.5 VCE(sat) (IC = 500 mA) 1 0.1 IB, BASE CURRENT (A) 10 0 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (AMPS) 10 0 0.01 Figure 7. Base-Emitter Saturation Region Figure 8. Collector Saturation Region 4 Motorola Bipolar Power Transistor Device Data BUH51 TYPICAL STATIC CHARACTERISTICS 1000 TJ = 25C f(test) = 1 MHz C, CAPACITANCE (pF) BVCER (VOLTS) Cib 1000 TJ = 25C 900 800 700 600 500 400 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 10 100 1000 RBE () 10000 100000 BVCER @ 10 mA BVCER(sus) @ 200 mA, 25 mH 100 Cob 10 Figure 9. Capacitance Figure 10. Resistive Breakdown TYPICAL SWITCHING CHARACTERISTICS 2500 IB1 = IB2 VCC = 300 V PW = 40 s 10 IB1 = IB2 VCC = 300 V PW = 40 s 2000 IC/IB = 5 t, TIME ( s) 8 IC/IB = 5 t, TIME (ns) 1500 6 1000 4 500 TJ = 125C TJ = 25C 0 1 2 IC, COLLECTOR CURRENT (AMPS) 3 2 TJ = 125C TJ = 25C 0 1 2 IC, COLLECTOR CURRENT (AMPS) 3 0 0 Figure 11. Resistive Switching, ton Figure 12. Resistive Switch Time, toff 7 IC/IB = 5 5 t, TIME ( s) IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H t, TIME ( s) 4 IC/IB = 10 3 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 2 3 1 TJ = 125C TJ = 25C 1 0 2 1 IC, COLLECTOR CURRENT (AMPS) 3 TJ = 125C TJ = 25C 0 0.5 1 1.5 IC, COLLECTOR CURRENT (AMPS) 2 Figure 13. Inductive Storage Time, tsi Figure 13 Bis. Inductive Storage Time, tsi Motorola Bipolar Power Transistor Device Data 5 BUH51 TYPICAL SWITCHING CHARACTERISTICS 800 IB1 = IB2 VCC = 15 V VZ = 300 V 600 L = 200 H C t, TIME (ns) tc 1000 IB1 = IB2 VCC = 15 V 800 VZ = 300 V LC = 200 H 600 tc tc 400 ttfi fi 200 TJ = 125C TJ = 25C 0 0.5 1.5 1 2 IC, COLLECTOR CURRENT (AMPS) 2.5 tfi t, TIME (ns) 400 tfi 200 TJ = 125C TJ = 25C 0.5 1 1.5 2 IC, COLLECTOR CURRENT (AMPS) 2.5 0 Figure 14. Inductive Storage Time, tc & tfi @ IC/IB = 5 Figure 15. Inductive Storage Time, tc & tfi @ IC/IB = 10 4 450 400 350 IBoff = IB2 VCC = 15 V VZ = 300 V LC = 200 H tsi , STORAGE TIME (s) t fi , FALL TIME (ns) 3 IC = 0.8 A 300 250 200 150 100 50 2 IC = 2 A TJ = 125C TJ = 25C 1 2 4 IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H 8 10 IC = 2 A 3 4 5 TJ = 125C TJ = 25C IC = 0.8 A 6 hFE, FORCED GAIN 0 6 7 hFE, FORCED GAIN 8 9 10 Figure 16. Inductive Storage Time Figure 17. Inductive Fall Time 800 700 t c , CROSSOVER TIME (ns) 600 500 400 300 200 100 3 4 TJ = 125C TJ = 25C IC = 2 A IB1 = IB2 VCC = 15 V VZ = 300 V LC = 200 H IC = 0.8 A 5 6 7 hFE, FORCED GAIN 8 9 10 Figure 18. Inductive Crossover Time 6 Motorola Bipolar Power Transistor Device Data BUH51 TYPICAL SWITCHING CHARACTERISTICS VCE dyn 1 s dyn 3 s 0V 10 9 8 7 6 5 4 90% IB 1 s IB 3 s TIME 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 Vclamp tsi 10% Vclamp IC 90% IC tfi 10% IC tc Figure 19. Dynamic Saturation Voltage Measurements Figure 20. Inductive Switching Measurements Table 1. Inductive Load Switching Drive Circuit +15 V 1 F 150 3W 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3W MTP12N10 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 Volts IC(pk) = 100 mA IB2 Inductive Switching L = 200 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 Volts RB1 selected for desired IB1 Iout IB RB1 VCE IB1 IC PEAK 1 F -Voff TYPICAL THERMAL RESPONSE 1 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 80 120 100 60 TC, CASE TEMPERATURE (C) 140 160 Figure 21. Forward Bias Power Derating Motorola Bipolar Power Transistor Device Data 7 BUH51 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based on T C = 25C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21. TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 4 GAIN 4 3 TC 125C LC = 500 H 10 1 ms 1 DC 5 ms 10 s 1 s 2 EXTENDED SOA 0.1 1 0V -5 V -1.5 V 900 0.01 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0 200 500 300 400 600 700 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 22. Forward Bias Safe Operating Area Figure 23. Reverse Bias Safe Operating Area TYPICAL THERMAL RESPONSE 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE t1 P(pk) RJC(t) = r(t) RJC RJC = 2.5C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.1 1 t, TIME (ms) 10 100 1000 Figure 24. Typical Thermal Response (ZJC(t)) for BUH51 8 Motorola Bipolar Power Transistor Device Data BUH51 PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 9 BUH51 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 10 Motorola Bipolar Power Transistor Device Data *BUH51/D* BUH51/D |
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