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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6027/D Programmable Unijunction Transistors 2N6027 2N6028 PUTs 40 VOLTS 300 mW Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to "program" unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Application includes thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO-92 plastic package for high-volume requirements, this package is readily adaptable for use in automatic insertion equipment. * * * * * Programmable -- RBB, , IV and IP. Low On-State Voltage -- 1.5 Volts Maximum @ IF = 50 mA Low Gate to Anode Leakage Current -- 10 nA Maximum High Peak Output Voltage -- 11 Volts Typical Low Offset Voltage -- 0.35 Volt Typical (RG = 10 k ohms) G A K A GK CASE 29-04 (TO-226AA) STYLE 16 MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Rating *Power Dissipation Derate Above 25C *DC Forward Anode Current Derate Above 25C *DC Gate Current Repetitive Peak Forward Current 100 s Pulse Width, 1% Duty Cycle *20 s Pulse Width, 1% Duty Cycle Non-repetitive Peak Forward Current 10 s Pulse Width *Gate to Cathode Forward Voltage *Gate to Cathode Reverse Voltage *Gate to Anode Reverse Voltage *Anode to Cathode Voltage(1) Operating Junction Temperature Range *Storage Temperature Range *Indicates JEDEC Registered Data 1. Anode positive, RGA = 1000 ohms Anode negative, RGA = open Symbol PF 1/JA IT IG ITRM 1 2 ITSM VGKF VGKR VGAR VAK TJ Tstg 5 40 -5 40 40 -50 to +100 -55 to +150 Amps Volts Volts Volts Volts C C Value 300 4 150 2.67 50 Unit mW mW/C mA mA/C mA Amps (c)Motorola Thyristor Device Data Motorola, Inc. 1995 1 2N6027 2N6028 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic *Peak Current (VS = 10 Vdc, RG = 1 M) (VS = 10 Vdc, RG = 10 k ohms) *Offset Voltage (VS = 10 Vdc, RG = 1 M) (VS = 10 Vdc, RG = 10 k ohms) *Valley Current (VS = 10 Vdc, RG = 1 M) (VS = 10 Vdc, RG = 10 k ohms) (VS = 10 Vdc, RG = 200 ohms) *Gate to Anode Leakage Current (VS = 40 Vdc, TA = 25C, Cathode Open) (VS = 40 Vdc, TA = 75C, Cathode Open) Gate to Cathode Leakage Current (VS = 40 Vdc, Anode to Cathode Shorted) *Forward Voltage (IF = 50 mA Peak) *Peak Output Voltage (VG = 20 Vdc, CC = 0.2 F) Pulse Voltage Rise Time (VB = 20 Vdc, CC = 0.2 F) *Indicates JEDEC Registered Data. 2N6027 2N6028 2N6027 2N6028 1 2N6027 2N6028 (Both Types) 1,4,5 2N6027 2N6028 2N6027 2N6028 2N6027 2N6028 -- IGAO -- -- -- 1,6 3,7 3 IGKS VF Vo tr -- -- 6 -- 1 3 5 0.8 11 40 10 -- 50 1.5 -- 80 nAdc Volts Volt ns IV -- -- 70 25 1.5 1 18 18 150 150 -- -- 50 25 -- -- -- -- VT 0.2 0.2 0.2 0.70 0.50 0.35 1.6 0.6 0.6 A Fig. No. 2,9,11 Symbol IP -- -- -- -- 1.25 0.08 4 0.70 2 0.15 5 1 Volts Min Typ Max Unit A mA nAdc FIGURE 1 - ELECTRICAL CHARACTERIZATION IA +VB A G VAK K VF VV 1A - Programmable Unijunction with "Program" Resistors R1 and R2 1B - Equivalent Test Circuit for Figure 1A used for electrical characteristics testing (also see Figure 2) IGAO IP IV IF IA R2 IA RG + VAK RG VS R1 + R1 )R2 R2 VA VS - VP VT = VP - VS * VS + R1 R1 R2 VB ) R1 IC - Electrical Characteristics FIGURE 2 - PEAK CURRENT (IP) TEST CIRCUIT -- IP (SENSE) 100 V = 1.0 nA + 2N5270 VB 0.01 F Scope 20 Put Under Test R RG = R/2 CC VS = VB/2 (See Figure 1) FIGURE 3 - Vo AND tr TEST CIRCUIT +VB +V 510 k 16 k Vo 6V Adjust for Turn-on Threshold 100k 1.0% vo 20 27 k 0.6 V tr t R 2 Motorola Thyristor Device Data 2N6027 2N6028 TYPICAL VALLEY CURRENT BEHAVIOR FIGURE 4 - EFFECT OF SUPPLY VOLTAGE 1000 500 FIGURE 5 - EFFECT OF TEMPERATURE IV , VALLEY CURRENT ( A) RG = 10 k I V , VALLEY CURRENT ( A) 100 RG = 10 k 100 100 k 100 k 1 M 1 M 10 10 5 10 15 VS, SUPPLY VOLTAGE (VOLTS) 20 5 -50 -25 0 +25 +50 +75 TA, AMBIENT TEMPERATURE (C) +100 FIGURE 6 - FORWARD VOLTAGE 10 V F , PEAK FORWARD VOLTAGE (VOLTS) 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IF, PEAK FORWARD CURRENT (AMP) 2.0 5.0 V o , PEAK OUTPUT VOLTAGE (VOLTS) TA = 25C 25 FIGURE 7 - PEAK OUTPUT VOLTAGE TA = 25C (SEE FIGURE 3) CC = 0.2 F 20 15 10 1000 pF 5.0 0 0 5.0 10 15 20 25 30 VS, SUPPLY VOLTAGE (VOLTS) 35 40 FIGURE 8 PROGRAMMABLE UNIJUNCTION A G E A P N P N K B2 R2 G + RT A G R1 K R2 R1 + R1 ) R2 + R1 R1 R2 ) R BB CC K Circuit Symbol B1 Equivalent Circuit with External "Program" Resistors R1 and R2 Typical Application Motorola Thyristor Device Data 3 2N6027 2N6028 TYPICAL PEAK CURRENT BEHAVIOR 2N6027 FIGURE 9 - EFFECT OF SUPPLY VOLTAGE AND RG 10 5.0 I P , PEAK CURRENT ( A) I P , PEAK CURRENT ( A) 3.0 2.0 1.0 0.5 0.3 0.2 0.1 5.0 10 15 VS, SUPPLY VOLTAGE (VOLTS) 20 RG = 10 k 100 k 1.0 M TA = 25C (SEE FIGURE 2) FIGURE 10 - EFFECT OF TEMPERATURE AND RG 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 -50 -25 RG = 10 k 100 k 1.0 M 0 +25 +50 TA, AMBIENT TEMPERATURE (C) +75 +100 VS = 10 VOLTS (SEE FIGURE 2) 2N6028 FIGURE 11 - EFFECT OF SUPPLY VOLTAGE AND RG 1.0 0.7 0.5 I P , PEAK CURRENT ( A) 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 5.0 10 15 VS, SUPPLY VOLTAGE (VOLTS) 20 1.0 M TA = 25C (SEE FIGURE 2) I P , PEAK CURRENT ( A) RG = 10 k 100 k 10 50 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 -50 -25 0 +25 +50 TA, AMBIENT TEMPERATURE (C) +75 +100 RG = 10 k 100 k 1.0 M VS = 10 VOLTS (SEE FIGURE 2) FIGURE 12 - EFFECT OF TEMPERATURE AND RG 4 Motorola Thyristor Device Data 2N6027 2N6028 PACKAGE DIMENSIONS A R P SEATING PLANE B F L K STYLE 16: PIN 1. 2. 3. 3. ANODE GATE CATHODE SOURCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- XX G H V 1 D J C SECTION X-X N N CASE 029-04 (TO-226AA) Motorola Thyristor Device Data 5 2N6027 2N6028 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 *2N6027/D* Motorola Thyristor Device Data 2N6027/D |
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