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| Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 0.600.05 Unit: mm Features * Compatible between high breakdown voltage and high cut-off frequency * Low noise, high-gain amplification * Optimal size reduction and high level integration for ultra-small packages 3 2 1 1.000.05 0.39+0.01 -0.03 0.150.05 0.050.03 0.350.01 0.250.05 0.500.05 0.250.05 1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 1 100 100 125 -55 to +125 Unit V V V mA mW C C 3 0.650.01 2 0.050.03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 5Y Note) *: Copper plate at the collector is 5.0 mm2 on substrate at 10 mm x 12 mm x 0.8 mm. Electrical Characteristics Ta = 25C 3C Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency * * Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 15 mA VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 15 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz Min Typ Max 1 1 1 Unit A A A GHz dB 100 17 6.0 9.0 1.4 0.6 220 Forward transfer gain * Noise figure Collector output capacitance (Common base, input open circuited) * 2.0 0.9 dB pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Observe precautions for handling. Electrostatic sensitive devices. 3. *: Verified by random sampling Publication date: November 2004 SJC00320BED 1 MSG43004 PC Ta 120 14 IB = 10 A step 12 IC VCE 180 160 hFE IC VCE = 3 V Collector power dissipation PC (mW) 100 Forward current transfer ratio hFE 80 A 70 A 60 A Collector current IC (mA) 140 120 100 80 60 40 20 0 10 8 80 60 50 A 40 A 30 A 20 A 6 4 2 0 40 20 10 A 0 1 2 3 4 5 6 0 0 40 80 120 0 0 1 10 100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (mA) fT I C Collector output capacitance C (pF) (Common base, input open circuited) ob 25 VCE = 3 V f = 2 GHz Cob VCB 1 f = 1 MHz Ta = 25C 15 GP I C VCE = 3 V f = 2 GHz Transition frequency fT (GHz) 20 10 15 Power gain GP (dB) 0.1 0 2 4 6 8 10 12 5 10 0 5 -5 0 1 10 100 -10 0.1 1 10 100 Collector current IC (mA) Collector-base voltage VCB (V) Collector current IC (mA) S21e2 IC 14 12 VCE = 3 V f = 2 GHz 7 6 NF IC VCE = 3 V f = 2 GHz S11 , S22 1.0 0.5 2.0 VCE = 3 V IC = 30 mA Forward transfer gain S21e (dB) 2 Noise figure NF (dB) 10 8 6 5 4 S11 0 0.3 S22 1.0 3.0 3 4 2 0 2 1 - 0.5 1 10 100 0 0.1 1 10 100 -2.0 -1.0 Collector current IC (mA) Collector current IC (mA) 2 SJC00320BED MSG43004 S21e2 , S12e2 f 50 40 Forward transfer gain S21e , 2 Reverse transfer gain S12e (dB) 30 20 10 0 S21e 2 2 -10 -20 -30 -40 -50 0 0.5 1.0 1.5 2.0 2.5 3.0 S12e 2 Frequency f (GHz) SJC00320BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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