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 N EW
IL388
HIGH PERFORMANCE LINEAR OPTOCOUPLER for Optical DAA in Telecommunications
Preliminary Data Sheet
Package Dimensions in Inches (mm)
K1 .225 (5.6) .336 (8.4) .215 (5.4) .010 (.25) Pin One ID K4 .230 (5.75) .220 (5.5) .015 (.375) .002 (.050) .042 (1.05) Ref. .094 (1.25) .084 (2.1) .043 (1.08) .033 (.83) .050 (1.25) Typ. .016 (.41) Typ. 10 Typ. .006 (.15) Typ. 3-7 40 .047 (1.175) .002 (.050) K1 5 N.C A2 A3 K2 8K 7A 6 N.C
FEATURES * 2.3 mm High SMT Package * High Sensitivity (K1) at Low Operating LED Current * Couples AC and DC Signals * Low Input-Output Capacitance * Isolation Voltage, 2500 VDC * Low Distortion, below -80 db * 0.4 mm Internal Insulation Thickness APPLICATIONS * Optical DAA for V.34 FAX/Modem PCMCIA Cards * Digital Telephone Line Isolation DESCRIPTION The IL388 family of Linear Optocoupler consist of an IRLED optically coupled to two photodiodes. The emitter is located such that both photodiodes receive approximately an equal amount of infrared light. The diodes produce a proportional amount of photocurrents. The ratio of the photocurrents stays constant with high accuracy when either the LED current changes or the ambient temperature changes. Thus one can control the output diode current optically by controlling the input photodiode current. The IL388 optocouplers can be used with the aid of operational amplifiers in closed loop conditions to achieve highly linear and electrically isolated AC and or DC signal amplifiers.
.291 (7.28) 010 (.250)
Absolute Maximum Ratings
Emitter Reverse Voltage Forward Current Surge Current Pulse Width <10 s Power Dissipation, TA=25C Dearate Linearly from 25C Junction Temperature Detector (each) Reverse Voltage Power Dissipation Derate Linearly from 25C Junction Temperature Coupler Isolation Test Voltage Total Package Power Dissipation Derate Linearly from 25C Storage Temperature Operating Temperature Lead Soldering Time at 260C Isolation Resistance VIO=500 V, TA=25C VIO=500 V, TA=100C 1012 1011 JANUARY 1996 TS TOP -40 0 VISOL Pt 2500 250 2.8 150 75 10 VDC mW mW/C C C sec. TJ VR P 15 50 0.65 100 V mW mW/C C TJ Sym VR IF IPK PLED Min. Max. 3 30 150 150 2 100 Units V mA mA mW mW/C C
Electrical Characteristics (TA=25C)
LED Emitter Symbol Min. Typ. Max. Units Test Conditions
Forward Voltage Reverse Current VF Temperature Coefficient Junction Capacitance Dynamic Resistance
Detector
VF IR VF/C CJ VF/IF
1.8 .01 -2.2 TBD 6
2.1 10
V A mV/C pF W
IF=10 mA VR=3 V
VF=0 V, f=1 MHz
Junction Capacitance
AC Characteristics Photovoltaic Mode
CJ
12
pF
VF=0 V, f=1 MHz
Frequency Response Phase Response Rise Time
Package
BW(-3dB)
1.0 45 350
MHz Deg. ns
IP1=25 A Modulation current IP1=6 A
Input-Output Capacitance Common Mode Capacitance
Coupled Characteristics
CIO Ccm
1 0.5
Min. Typ.
pF pF
Max.
VF=0 V, f=1 MHz VF=0 V, f=1 MHz
Units
K1 at IF=2 mA, VD=0 V THD at 0=316, IPI=35 A, VD=0 V K3=K2/K1, IF=2 mA, VD=0 V Bin table for K3
Bin Min. Max.
0.007 -83 0.690 1.311 db
C D E F G H
0.690 0.765 0.851 0.945 1.051 1.169
0.773 0.859 0.955 1.061 1.181 1.311
IL388
2


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