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| HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581(Z) Rev 0 Features * Low capacitance (C = 8.5pF max) and can protect ESD of signal line. * Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.2Z Laser Mark 62Z Package Code URP Outline HZU6.2Z Absolute Maximum Ratings (Ta = 25C) Item Power dissipation Junction temperature Storage temperature Note: Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW C C 1. Two device total, See Fig.2. Electrical Characteristics (Ta = 25C) Item Zener voltage Reverse current Capacitance Dynamic resistance Symbol VZ IR C rd Min 5.90 -- -- -- Typ -- -- 8.0 -- Max 6.50 3 8.5 60 Unit V A pF Test Condition I Z = 5 mA, 40ms pulse VR = 5.5V VR = 0V, f = 1 MHz I Z = 5 mA 2 HZU6.2Z Main Characteristic 3 HZU6.2Z Main Characteristic 4 HZU6.2Z Package Dimensions Unit : mm 5 |
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