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| ADE-208-039D(Z) HSM276S Silicon Schottky Barrier Diode for Balanced Mixer Rev.4 Aug. 1994 Features * High forward current, Low capacitance. * HSM276S which is interconnected in series configuration is designed for balanced mixer use * MPAK package is suitable for high density surface mounting and high speed assembly. 2 Pin Arrangement 3 1 Ordering Information Type No. HSM276S Laser Mark C2 Package Code MPAK (Top View) 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Average forward current Junction temperature Storage temperature * Per one device Symbol VR I o* Tj Tstg Value 3 30 100 -55 to +100 Unit V mA C C Electrical Characteristics (Ta = 25C) * Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD Capability Symbol Min VR IR IF C C -- 3.0 -- 35 -- -- 30 Typ -- -- -- -- -- -- Max -- 50 -- 0.90 0.10 -- Unit V A mA pF pF V Test Condition IR = 1 mA VR= 0.5 V VF= 0.5 V VR = 0.5 V, f = 1 MHz VR = 0.5 V, f = 1 MHz ** C=200pF, Both forward and reverse direction 1 pulse * Per one device ** Failure Criterrion ; IR 100A at VR = 0.5V HSM276S 10 -1 10 -2 Forward current I F (A) 10 -3 Reverse current I R (A) 0.8 0.4 0.6 0.2 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 10 -2 10 -3 10 -4 10 -4 10 -5 10 -5 10 0 1.0 -6 0 4.0 2.0 3.0 1.0 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 5.0 f=1MHz 10 Capacitance C (pF) 1.0 10 -1 10 -1 1.0 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 10 HSM276S Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 1.9 0.3 2.8 + 0.1 - 0.3 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 C2 1.5 0 - 0.10 1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HITACHI Code 1.1 - 0.1 + 0.2 MPAK(1) -- SC-59A 0.011 JEDEC Code EIAJ Code Weight (g) |
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