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 HRU0103A
Silicon Schottky Barrier Diode for Rectifying
ADE-208-450 (Z) Rev 0 June 1996 Features
* * Low forward voltage drop and suitable for high effifiency forward current. Ultra small Resin Package (URP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRU0103A Laser Mark S1 Package Code URP
Outline
Cathode mark Mark 1
S1
2 1. Cathode 2. Anode
HRU0103A
Absolute Maximum Ratings (Ta = 25C)
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Note Note Symbol VRRM*1 Io*2 Value 30 100 3 125 -55A+150 Unit V mA A C C
IFSM*3
Tj Tstg
1. See Fig.3 2. See Fig.4 3. 10msec sine wave 1 pulse
Electrical Characteristics (Ta = 25C)
Item Forward voltage Reverse current Thermal resistance Note 1. Symbol VF IR Rth(j-a) Min Typ Max 0.44 50 Unit V A Test Condition IF = 100 mA VR = 30V
A\ A\ A\
A\ A\
600
A\
C/W Polyimide substrate*1
Polyimide PCB
20hx15wx0.8t
1.5
3.0
0.8
Unit: mm
1.5
HRU0103A
Main Characteristic
1.0 Pulse test 10 Forward current I F (A)
-1
10
-2
Pulse test 10
-3
10
-2
Reverse current I R (A)
Ta=75C
10
-4
10
-3
Ta=25C
Ta=75C 10
-5
10
-4
Ta=25C 10
-6
10
-5
10
-6
0
0.2
0.4
0.6
0.8
1.0
10 0
-7
10
20
30
40
50
Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage
35 30 Repetitive peak reverse voltage (V)
DC
120 Average forward current (mA)
*Duty : Reverse bias
100
DC Duty=2/3
25 20 15 10 5 0 0 25 50 75 100 125 150 Ambient temperature Ta (C)
80
Duty=1/2
60
Duty=1/3
40 20 0
0
25
50
75 100 125 150
Ambient temperature Ta (C) Fig.4 Average forward current Vs. Ambient temperature
Fig.3 Repetitive peak reverse voltage Vs. Ambient temperature
HRU0103A
Package Dimensions
Unit : mm
Cathode Mark
1
S1
1.70.15 2.50.15
2 0.30.15
1.250.15
1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) URP -- -- 0.004 0 to 0.10 0.90.15


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