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| HRC0103A Silicon Schottky Barrier Diode for Rectifying ADE-208-624 (Z) Rev 0 May. 1998 Features * Low forward voltage drop and suitable for high effifiency rectifying. * Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HRC0103A Laser Mark S1 Package Code UFP Outline Cathode mark Mark 1 S1 2 1. Cathode 2. Anode HRC0103A Absolute Maximum Ratings (Ta = 25C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V *1 RRM Value 30 100 Unit V mA A C C I o*1 IFSM Tj *2 3 125 -55 to +125 Tstg Notes: 1. See from Fig.3 to Fig.5 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25C) Item Forward voltage Reverse current Thermal resistance Note 1. Symbol VF IR Rth(j-a) Min -- -- -- Typ -- -- 500 Max 0.44 50 -- Unit V A Test Condition I F = 100 mA VR = 30V C/W Polyimide board *1 Polyimide board 20hx15wx0.8t 1.5 3.0 0.8 1.5 Unit: mm 2 HRC0103A Main Characteristic 1.0 Pulse test 10 -1 10 -2 Pulse test 10 -3 10 -2 Reverse current I R (A) Forward current I F (A) Ta=75C 10 -4 10 -3 Ta=25C Ta=75C 10 -5 10 -4 Ta=25C 10 -6 10 -5 10 -6 0 0.2 0.4 0.6 0.8 1.0 10 0 -7 10 20 30 40 50 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage 0.10 0A t T Tj =25C Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 0.6 0V Forward power dissipation Pd (W) 0.08 t D= \ T Reverse power dissipation Pd (W) 0.5 T t t D= \ T D=1/6 Sin(=180) D=1/3 D=1/2 DC Tj =125C 0.4 D=5/6 0.3 D=2/3 D=1/2 Sin(=180) 0.1 0 0.06 0.04 0.2 0.02 0 0 0.02 0.04 0.06 0.08 0.10 Forward current I F (A) 0.12 0 10 20 30 Reverse voltage V R@ (V) 40 Fig.3 Forward power dissipation Vs.Forward current Fig.4 Reverse power dissipation Vs.Reverse voltage 3 HRC0103A Main Characteristic 0.12 0.10 Average forward current IO (A) VR=VRRM/2 Tj =125C Rth(j-a)=500C/W DC 0.08 D=1/2 Sin(= 180) 0.06 D=1/3 0.04 D=1/6 0.02 0 -25 0 25 50 75 100 125 Ambient temperature Ta (C) Fig.5 Average forward current Vs. Ambient temperature 4 HRC0103A Package Dimensions Unit : mm Cathode Mark S1 1.2 0.10 1.6 0.10 0.3 0.05 0.8 0.10 1 Cathode 2 Anode 0.6 0.10 HITACHI Code JEDEC Code EIAJ Code Weight (g) UFP -- SC-79 0.0016 5 HRC0103A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA. 94005-1897 USA Tel: 800-285-1601 Fax:303-297-0447 Hitachi Europe GmbH Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30-00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 01628-585000 Fax: 01628-585160 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 6 |
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