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| HRB0502A Silicon Schottky Barrier Diode for Rectifying ADE-208-609(Z) Rev 0 Mar. 1998 Features * Low forward voltage drop and suitable for high efficincy rectifying. * CMPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRB0502A Laser Mark E3 Package Code CMPAK Outline 3 2 1 1 NC 2 Anode 3 Cathode (Top View) HRB0502A Absolute Maximum Ratings (Ta = 25C) Item Repetitive peak reverse voltage Average rectified current Symbol VRRM I O*1 *2 Value 20 500 5 125 -55 to +125 Unit V mA A C C Non-Repetitive peak forward I FSM surge current Junction temperature Storage temperature Tj Tstg Notes 1. See from Fig.4 to Fig.6 Notes 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25C) Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF IR C Rth(j-a) Min -- -- -- -- Typ -- -- 120 450 Max 0.4 200 -- -- Unit V A pF Test Condition I F = 500 mA VR = 20V VR = 0V, f = 1 MHz C/W Polyimide board *1 Notes 1. Polyimide board 20hx15wx0.8t 1.5 3.0 2.0 0.8 Unit: mm 1.5 2 HRB0502A Main Characteristic -1 10 Pulse test 1.0 Ta=75C 10 -1 10 Pulse test -2 10 Reverse current I R (A) Forward current IF (A) 10 -3 Ta=75C Ta=25C 10 -2 10 -4 Ta=25C 10 -5 10 -3 10 -4 0 0.2 0.4 0.6 0.8 1.0 10 -6 0 5 10 15 20 25 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage 10 2 f=1MHz Pulse test Capacitance C (pF) 10 1.0 1.0 10 Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 40 3 HRB0502A Main Characteristic 0.4 Forward power dissipation Pd (W) 0 2.5 0 Reverse power dissipation Pd (W) Io tp T D= tp T D=1/6 D=1/3 Sin wave D=1/2 VR tp T D= tp T 2.0 D=5/6 D=2/3 D=1/2 0.3 Tj =25C Tj =125C 1.5 0.2 DC 1.0 Sin wave 0.5 0 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 25 Forward current @ @IF @(A) Reverse voltage @ @VR @(V) Fig4. Forward power dissipation Vs. Forward current Fig5. Reverse power dissipation Vs. Reverse voltage 0.6 VR=3V @Io (A) Tj =125C Rth(j-a)=450C/W 0.5 DC 0.4 D=1/2 0.3 D=1/6 0.2 0.1 0 -25 Io 0 tp T D= tp T Average rectified current Sin wave D=1/3 0 25 50 75 100 125 Ambient temperature Ta ( C) Fig.6 Average rectified current Vs. Ambient temperature 4 HRB0502A Package Dimensions Unit : mm 0.425 2.0 0.2 Laser Mark 3 0.1 0.3 + 0.05 - 0.16 - 0.06 2.1 0.3 + 0.1 1.25 0.1 E3 1.3 0.2 0.2 0 - 0.1 0.9 0.1 0.425 0.1 0.3 + 0.05 - 0.65 2 1 0.1 0.3 + 0.05 - 0.65 1 NC 2 Anode 3 Cathode Hitachi Code JEDEC Code EIAJ Code Weight (g) CMPAK -- SC-70 0.006 5 HRB0502A When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA. 94005-1897 USA Tel: 800-285-1601 Fax:303-297-0447 Hitachi Europe GmbH Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30-00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 01628-585000 Fax: 01628-585160 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright (c) Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 6 |
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