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| ADE-208-439 F (Z) HAT2020R Silicon N Channel Power MOS FET 7th. Edition Jan. 1996 Application SOP-8 High speed power switching 8 5 76 Features * * * * Low on-resistance Capable of 4V gate drive Low drive current High density mounting 56 7 8 DD D D 3 12 4 4 G Ordering Information ---------------------------------------- Hitachi Cord EIAJ Cord JEDEC Cord FP-8DA -- MS-012AA SSS 123 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain ---------------------------------------- ---------------------------------------- ---------------------------------------- Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 30 20 8 64 8 2.5 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** When using the glass epoxy board (FR4 40 x 40x 1.6 mm), PW 10 s HAT2020R Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 30 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.020 10 10 2.0 0.028 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ID = 4A VGS = 10V * ID = 4A VGS = 4V * ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz VGS = 4 V, ID = 4 A VDD = 10 V ------------------------------------------------ -- 0.030 0.050 -------------------------------------------------------------------------------------- Forward transfer admittance |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 7 11 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 780 560 240 35 240 50 100 0.8 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 8A, VGS = 0 IF = 8A, VGS = 0 diF / dt = 20 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 55 -- ns -------------------------------------------------------------------------------------- HAT2020R Power vs. Temperature Derating 4.0 Pch (W) I D (A) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s 3.0 100 30 10 Maximum Safe Operation Area 10 s 100 s PW DC Op 1 m = s 10 m 3 Drain Current 2.0 s Channel Dissipation er n( 1 Operation in PW this area is < 10 s 0.3 limited by R DS(on) ati o )* * 1.0 0.1 0.03 Ta = 25 C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage V DS (V) ** When using the glass epoxy board (FR4 40 x 40x 1.6 mm) 0 50 100 150 Ta (C) 200 Ambient Temperature Typical Output Characteristics 20 10V 6V 5V 4.5 V 4V 3V Typical Transfer Characteristics 20 V DS = 10 V Pulse Test (A) ID Drain Current 16 3.5 V I D (A) 16 Pulse Test 12 12 25C Tc = 75C -25C 4 Drain Current 8 8 4 VGS = 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 5 4 V GS (V) HAT2020R Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) (m ) 0.10 Static Drain to Source on State Resistance vs. Drain Current 500 Pulse Test 200 100 50 20 10 V 10 5 0.2 0.08 Drain to Source Voltage 0.06 ID=2A 0.04 1A 0.5 A 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) VGS = 4 V 0.02 0.5 1 2 Drain Current 10 I D (A) 5 20 Static Drain to Source on State Resistance R DS(on) (m ) Pulse Test 80 Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 100 50 Forward Transfer Admittance vs. Drain Current 20 10 5 2 1 0.5 0.2 Tc = -25 C 25 C 60 I C = 0.5 A, 1 A, 2 A 40 V GS = 4 V 0.5 A, 1 A, 2 A 10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) 75 C 20 V DS = 10 V Pulse Test 0.5 1 2 5 10 20 Drain Current I D (A) HAT2020R 500 Reverse Recovery Time trr (ns) 200 100 50 Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 10000 3000 1000 300 100 30 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Ciss Coss Crss VGS = 0 f = 1 MHz 20 10 5 0.2 di/dt = 20 A/s V GS = 0, Ta = 25C 0.5 1 2 5 10 20 Reverse Drain Current I DR (A) Capacitance C (pF) Dynamic Input Characteristics V DS (V) I D= 8 A V DD = 5 V 10 V 25 V V DS V GS 20 8 V GS (V) 50 20 1000 500 Switching Time t (ns) Switching Characteristics 40 16 Drain to Source Voltage 30 12 Gate to Source Voltage 200 100 50 tr tf t d(off) t d(on) V GS = 4 V, V DD = 10 V PW = 3 s, duty < 1 % 0.5 1 2 Drain Current 5 10 I D (A) 20 10 V DD = 25 V 10 V 5V 8 16 24 32 Gate Charge Qg (nc) 4 0 40 20 10 0.2 0 HAT2020R Reverse Drain Current vs. Souece to Drain Voltage 20 Reverse Drain Current I DR (A) Pulse Test 16 12 V GS = 0 V 5V 8 4 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) Package Dimensions * SOP-8 Unit : mm 5.0 Max 8 5 1 4 4.0 Max 1.75 Max 6.2 Max 0.25 Max 0 - 8 1.27 0.51 Max 0.25 Max 1.27 Max 0.15 0.25 M Hitachi Code FP-8DA -- EIAJ MS-012AA JEDEC |
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