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SSM3K11T
Under Development
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Lateral)
SSM3K11T
The information contained herein in subject to change without notice; likewise, product development may be discontinued.
DC-DC Converter High Speed Switching Applications
* * * * * Ultra-high-speed switching achieved using a lateral structure ton = 6.4 ns, toff = 4.9 ns Low reverse transfer capacitance: Crss = 6.8 pF (typ.) Thin package Low ON-resistance: RDS (ON) = 1.2 (typ.) VGS = 2.5 V Direct drive by CMOS possible
Unit in: mm
Maximum Ratings (Ta = 25C)
Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP (Note2) PD (Note1) Tch Tstg Rating 40 10 500 2 1250 150 -55~150 Unit V V mA A mW C C
JEDEC EIAJ TOSHIBA
TO-236MOD SC-59 2-3S1B
Note1: Mounted on FR4 board 2 (25.4 mm x 25.4 mm x 1.6 t, Cu pad: 645 mm , t = 10 s) Note2: The pulse width limited by max channel temperature.
Weight: 10 mg
Handling Precaution
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account.
000707EAA1
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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SSM3K11T
Equivalent Circuit
S
Marking
KX
G
D
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss tr ton tf toff VDD = 10 V, ID = 250 mA VGS = 0~2.5 V Test Condition VGS = 10 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 40 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 500 mA ID = 250 mA, VGS = 2.5 V ID = 500 mA, VGS = 4 V (Note3) (Note3) (Note3) Min 40 0.8 0.55 Typ. 1.1 1.2 1.0 64 6.8 38 2.9 6.4 2.1 4.9 Max 0.1 1 1.4 1.8 1.3 ns Unit A V A V S pF pF pF
VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz
Note3: Pulse test
Switching Time Test Circuit
(a) Test circuit
1 s 2.5 V IN RG 0 RL ID OUT VDD = 10 V RG = 50 D.U. < 1% = VIN: tr, tf < 5 ns Common source Ta = 25C
(b) VIN
2.5 V 90% 10%
(c) VOUT
0 VDD
10% 90%
VDD
VDS (ON) ton
tr toff
tf
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 A for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on this product.
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