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| TG2210FT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2210FT RF SPDT Switch Switch the receive filter for mobile communication Switch the diversity antenna Switch the local signal Features * * * * Low insertion Loss: LOSS = 0.4dB (typ.) High isolation: ISL = 30dB (typ.) Low voltage operation: VC = 0 V/2.5 V Small package: TU6 package (2.0 x 1.25 x 0.6 mm) Weight: 0.008 g (typ.) Pin Connection, Marking (top view) VC1 6 RFcom 5 VC2 4 UL 1 RF2 2 GND 3 RF1 Maximum Ratings (Ta = 25C) Characteristics Control voltage Input power Operating temperature range Storage temperature range Symbol VC1 VC2 Pi Topr Tstg Rating 5 5 1 -40~85 -55~125 Unit V V W C C Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. 000707EAC2 * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. 2000-08-25 1/6 TG2210FT Electrical Characteristics (f = 1 GHz, Ta = 25C, Zg = Zl = 50 ) Characteristics Symbol LOSS (1) Insertion LOSS LOSS (2) ISL (1) Isolation ISL (2) Input power at 1dB gain compression Pi1dB IC1 IC2 Switching time tsw 1 1 1 1 Test Circuit 1 Test Condition VC1 = 2.5 V, VC2 = 0 V, Pi = 0dBmW VC1 = 0 V, VC2 = 2.5 V, Pi = 0dBmW VC1 = 2.5 V, VC2 = 0 V, Pi = 0dBmW VC1 = 0 V, VC2 = 2.5 V, Pi = 0dBmW VC1 = 2.5 V, VC2 = 0 V or VC1 = 0 V, VC2 = 2.5 V VC1 = 0 V, VC2 = 3 V or VC1 = 3 V, VC2 = 0 V VC1 = 0 V, VC2 = 2.5 V or VC1 = 2.5 V, VC2 = 0 V Min 27 27 18 Typ. 0.4 0.4 30 30 200 Max 0.7 0.7 0.01 0.01 Unit dB dB dB dB dBmW mA mA ns Control current Block Diagram RF1 RFcom RF2 Switch Condition Control Voltage VC1 = 2.5 V VC2 = 0 V VC1 = 0 V VC2 = 2.5 V Switch Condition RFcom RF1 OFF RFcom RF2 ON RFcom RF1 ON RFcom RF2 OFF 000707EAC2 * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-08-25 2/6 TG2210FT Test Circuit 1 (RF Test Circuit) RFcom C1 VC1 C2 C2 VC2 Top view C1 C3 GND C1 RF2 RF1 C1: 100 pF C2: 100 pF C3: 7 pF Please fix the value of each capacity for using frequency and circuit. Recommend Capacity 1 GHz 1 2 3 1.6 GHz 100 pF 100 pF 3 pF 2.4 GHz 100 pF 100 pF 1.5 pF 100 pF 100 pF 7 pF Notice The circuits and measurements contained in this document are given only in the context of as examples of applications for these products. Moreover, these example application circuits are not intended for mass production, since the high-frequency characteristics (the AC characteristics) of these devices will be affected by the external components which the customer uses, by the design of the circuit and by various other conditions. It is the responsibility of the customer to design external circuits which correctly implement the intended application, and to check the characteristics of the design. TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications. 2000-08-25 3/6 TG2210FT LOSS (1) - Pi 0.0 0.0 LOSS (2) - Pi (dB) LOSS (1) 1.0 VC2 = 0 V f = 1.0 GHz VC1 = 2.5 V VC1 = 2.7 V VC1 = 3.0 V 2.0 0 10 20 30 LOSS (2) Insertion loss (dB) 1.0 VC1 = 0 V f = 1.0 GHz VC2 = 2.5 V VC2 = 2.7 V VC2 = 3.0 V 2.0 0 10 20 30 Insertion loss Input power Pi (dBmW) Input power Pi (dBmW) ISL (1) - Pi 0 VC2 = 0 V f = 1.0 GHz VC1 = 2.5 V VC1 = 2.7 V VC1 = 3.0 V 0 VC1 = 0 V f = 1.0 GHz ISL (2) - Pi VC2 = 2.5 V VC2 = 2.7 V VC2 = 3.0 V ISL (1) (dB) 20 ISL (2) (dB) Isolation 10 20 30 10 10 20 Isolation 30 30 40 0 40 0 10 20 30 Input power Pi (dBmW) Input power Pi (dBmW) LOSS (1) - f 0.0 0.0 LOSS (2) - f (dB) Insertion loss LOSS (1) 1.0 VC1 = 2.5 V VC2 = 0 V Pi = 0dBmW 1.0 GHz matching 1.6 GHz matching 2.4 GHz matching 2.0 0.0 1.0 2.0 3.0 Insertion loss LOSS (2) (dB) 1.0 VC1 = 0 V VC2 = 2.5 V Pi = 0dBmW 1.0 GHz matching 1.6 GHz matching 2.4 GHz matching 2.0 0.0 1.0 2.0 3.0 Frequency f (GHz) Frequency f (GHz) 2000-08-25 4/6 TG2210FT ISL (1) - f 0 VC1 = 2.5 V VC2 = 0 V Pi = 0dBmW 0 VC1 = 0 V VC2 = 2.5 V Pi = 0dBmW ISL (2) - f ISL (1) (dB) 20 ISL (2) (dB) Isolation 1.0 GHz matching 1.6 GHz matching 2.4 GHz matching 10 10 20 Isolation 30 30 1.0 GHz matching 1.6 GHz matching 2.4 GHz matching 40 0.0 40 0.0 1.0 2.0 3.0 1.0 2.0 3.0 Frequency f (GHz) Frequency f (GHz) LOSS (1), (2) - Ta 0.0 25.0 ISL (1), (2) - Ta (dB) LOSS (1), (2) ISL (1), (2) LOSS (2) VC1 = 2.5 V VC1 = 0 V VC2 = 0 V VC2 = 2.5 V Pi = 0dBmW, f = 1.0 GHz -20 0 20 40 LOSS (1) LOSS (2) 60 80 LOSS (1) (dB) 1.0 27.0 29.0 Insertion loss Isolation 31.0 ISL (1) 33.0 ISL (2) ISL (1) ISL (2) 20 40 60 80 VC1 = 2.5 V VC1 = 0 V VC2 = 0 V VC2 = 2.5 V Pi = 0dBmW, f = 1.0 GHz -20 0 2.0 -40 35.0 -40 Temperature Ta (C) Temperature Ta (C) Switching Time (RAISE) VC Switching Time (FALL) VC 23 ns RF RF 39 ns Time (10 ns/div) Time (10 ns/div) 2000-08-25 5/6 TG2210FT Package Dimensions Weight: 0.008 g (typ.) 2000-08-25 6/6 |
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