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| TPD1035F Preliminary Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1035F Low-Side Power Switch for Motor, Solenoid and Lamp Drivers TPD1035F is a low-side switch. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC offers intelligent self-protection functions. Features * A monolithic power IC with a new structure combining a control block and a vertical power MOSFET (L2--MOS) on a single chip. Can directly drive a power load from a CMOS or TTL logic. Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter). Low Drain-Source ON-resistance: RDS (ON) = 0.4 (max) (@VIN = 5 V, ID = 1 A, Tch = 25C) Low Leakage Current: IDSS = 10 A (max) (@VIN = 0 V, VDS = 30 V, Tch = 25C) Low Input Current: IIN = 300 A (max) (@VIN = 5 V, Tch = 25C) 3-pin package for surface mounting can be packed in tape. 12 3 123 * * * * * * Weight HSIP3-P-2.30B: 0.36 g (typ.) HSOP3-P-2.30A: 0.28 g (typ.) Pin Assignment (top view) DRAIN Marking side 1 IN 2 3 DRAIN SOURCE Note1: That because of its MOS structure, this product is sensitive to static electricity. 980910EBA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-03-07 1/6 TPD1035F Preliminary Block Diagram DRAIN 2 IN 1 Overheat Detection /Protection SOURCE 3 Overcurrent Detection /Protection Pin Description Pin No. Symbol Input pin 1 IN This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently. Drain pin Drain current is limited (by current limiter) if it exceeds 3 A (min) in order to protect the IC. 3 SOURCE Source pin Pin Description 2 DRAIN 2000-03-07 2/6 TPD1035F Preliminary Timing Chart Input Signal Overcurrent Protection Overtemperature Protection Output Current Current limiting (limiter) Overtemperature protection (Note2) Note2: The overheating detector circuits feature hysteresis. After overheating is detected, normal operation is restored only when the channel temperature falls by the hysteresis amount (5C typ.) in relation to the overheating detection temperature. Truth Table IN L H L H L H VOUT H L H H H H Overtemperature Overcurrent Mode Normal Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain current Input voltage Power dissipation Tc = 25C Ta = 25C Symbol VDS (DC) ID VIN PD Topr Tch Tstg Rating 20 Internally Limited -0.3 to 7 10 1 -40 to 110 150 -55 to 150 C C C Unit V A V W Operating temperature Channel temperature Storage temperature 2000-03-07 3/6 TPD1035F Preliminary Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 12.5 125 Unit C/W C/W Electrical Characteristics (Tch = 25C) Characteristics Drain-source clamp voltage Input threshold voltage Protective circuit operation input voltage range Draint cut-off current Symbol V (CL) DSS Vth VIN (opr) IDSS IIN (1) Input current IIN (2) Drain-source on resistance Overtemperature protection Overcurrent protection Switching time Source-drain diode forward voltage RDS (ON) TS IS tON tOFF VDSF Test Circuit 1 1 Test Condition VIN = 0 V, ID = 1 mA VDS = 13 V, ID = 10 mA VIN = 0 V, VDS = 30 V VIN = 5 V, at normal operation VIN = 5 V, when protective circuit is actuated VIN = 5 V, ID = 1 A VIN = 5 V VIN = 5 V VDD = 13 V, VIN = 5 V, ID = 1 A IF = 3 A, VIN = 0 V Min 40 1.0 3 150 3 Typ. 0.25 160 Max 60 2.8 7 10 300 390 0.4 30 60 1.7 A C A s V Unit V V V A Test Circuit 1 Switching time measuring circuit Test Circuit Measured Waveforms 5V TPD1035F IN OUT GND To be set so that ID = 1 A. 13 V VIN Waveform 10% 90% 90% VOUT Waveform tON 10% tOFF 13 V P.G V 2000-03-07 4/6 TPD1035F Preliminary Package Dimensions Weight: 0.36 g (typ.) 2000-03-07 5/6 TPD1035F Package Dimensions Weight: 0.28 g (typ.) 2000-03-07 6/6 |
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