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| D1-28Z NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The D1-28Z is Designed for General Purpose Class C Amplifier Applications up to 1.0 GHz. PACKAGE STYLE .280 4L STUD A 45 C B FEATURES: * PG = 8.0 dB Typ. at 1 W/1,000 MHz * Emitter Ballasting for Ruggedness * OmnigoldTM Metallization System D E B C E J E F G I MAXIMUM RATINGS IC VCB PDISS TJ T STG JC 1.0 A 45 V 7 W @ TC = 25 OC -65 to +200 OC -65 to +150 OC 25 C/W O H K DIM A B C D E F G H I J K .175 / 4.45 .275 / 6.99 .245 / 6.22 .640 / 16.26 MINIMUM inches / mm #8-32 UNC MAXIMUM inches / mm 1.010 / 25.65 .220 / 5.59 .270 / 6.86 .003 / 0.08 .117 / 2.97 .572 / 14.53 .130 / 3.30 1.055 / 26.80 .230 /5.84 .285 / 7.24 .007 / 0.18 .137 / 3.48 .255 / 6.48 .217 / 5.51 .285 / 7.24 ORDER CODE: ASI10807 CHARACTERISTICS SYMBOL BV CBO BV CER BV EBO ICBO hFE Cob PG C IC = 1 mA IC = 20 mA IE = 1 mA VCE = 28 V VCE = 5.0 V VCB = 28 V VCE = 28 V TC = 25 OC TEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 45 45 3.5 250 UNITS V V V A --pF dB % IC = 100 mA f = 1.0 MHz POUT = 1.0 W f = 1,000 MHz 15 150 5.0 7.0 65 8.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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