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| CMY 211 GaAs MMIC Preliminary Data l l l l l l l l l l RF or IF GND LO in 3 2 1 Linear Mixer with integrated LO-Buffer High Input-IP3 of typical 17.5dBm Very low LO-Power demand of typ. 0dBm Suited for Up- and Down-Conversion Wide LO-Frequency Range <500MHz to >2,5GHz Wide LO-Level Range Single ended Ports RF- and IF-Port Impedance 50 Ohm Operating Voltage Range: < 3 to 6V Very low Current Consumption of typical 2.5mA 6 5 4 V DD GND IF or RF ESD: Electrostatic discharge sensitive device Observe handling Precautions! Type Marking Ordering code (tape and reel) Package 1) CMY211 Maximum Ratings Characteristics Supply Voltage DC-Voltage at LO Input DC-Voltage at RF-IF Ports Power into RF-IF Ports Power into LO Input Channel Temperature Storage Temperature Thermal Resistance Characteristics 2) M4s Q62702M17 MW-6 Port 4 3 1, 6 1, 6 3 Symbol min VDD V3 V1,6 Pin,RF Pin,LO TCh Tstg -55 0 -3 - 0,5 Value max 6 0,5 + 0,5 10 10 150 150 Unit V V V dBm dBm C C Channel to Soldering Point (GND) 1) For detailed dimensions see page 7. Symbol RthChS Value 100 Unit K/W 2) For DC test purposes only, no DC voltages at pins 1, 6 in application Siemens Aktiengesellschaft Semiconductor Group 1 1 03.06.1998 1998-11-01 HL HF PE GaAs CMY 211 Electrical Characteristics Test conditions: Ta = 25C; VDD= 3V, see test circuit; fRF = 808MHz; fLO = 965MHz; PLO = 0dBm; fIF = 157MHz, unless otherwise specified: Parameter, Test Conditions Operating Current Conversion Loss SSB Noise Figure 2 Tone 3rd Order IMD PRF1 = PRF2 = -3dBm fRF1 = 806MHz; fRF2 = 810MHz; fLO =965MHz 3rd Order Input Intercept Point P-1dB Input Power LO Leakage at RF/IF-Port (1,6) Symbol Iop Lc Fssb dIM3 min typ 2.5 6.0 6.0 41 max Unit mA dB dB dBc IP3in P-1dB PLO 1,6 - 17.5 tbf. -13 - dBm dBm dBm Siemens Aktiengesellschaft Semiconductor Group 2 2 03.06.1998 1998-11-01 HL HF PE GaAs CMY 211 Test circuit / application example L2 in/ out RF 50 Ohm C2 L1 C1 out/ in IF 50 Ohm CMY211 LOin C3 L3 3 1 6 4 2,5 C4 L4 Vdd Notes for external elements: L1, C1: Filter for upper frequency; C2, L2: Filter for lower frequency; each filter is a throughpath for the desired frequency (RF or IF) and isolates the other frequency (IF or RF) and its harmonics. These two filters must be connected to pin 1 and pin 6 directly. Parasitic capacitances at the ports 1 and 6 must be as small as possible. L4 and C4 are optimized by indicating lowest Iop at used LO-frequency; same procedure for L3. The ports 1, 3 and 6 must be DC open. Element values for 800MHz test and application circuit: f LO MHz 965 F RF MHz 808 F IF MHz 157 L1 nH 8.2 C1 pF 3.9 L2 nH 8.2 C2 pF 3.9 L3 nH 6.8 C3 pF 47 L4 nH 15 C4 pF 33 Siemens Aktiengesellschaft Semiconductor Group 3 3 03.06.1998 1998-11-01 HL HF PE GaAs CMY 211 PCB-Layout for 800MHz test and application circuit: 33pF 33pF 6.8nH 15nH 3.9pF CMY211 3.9pF 8.2nH 8.2nH Actual size General description and notes: The CMY 211 is an all port single ended general purpose Up- and Down-Converter. It combines small conversion losses and excellent intermodulation characteristics with a low demand of LO- and DC-power. The internal level controlled LO-Buffer enables a good performance over a wide LO level range. The internal mixers principle with one port RF and IF requires a frequency separation at pin 1 and 6 respectively. Note 1: Best performance with lowest conversion loss is achieved when each circuit or device for the frequency separation meets the following requirements: Input Filter: Throughpass for the signal to be mixed; reflection of the mixed signal and the harmonics of both. Output Filter: Throughpass for the mixed signal and reflection of the signal to be mixed and the harmonics of both. The impedance for the reflecting frequency range of each filter toward the ports 1 and 6 should be as high as possible. In the simplest case a series- and a parallel- resonator circuit will meet these requirements but also others as appropriate drop in filters or micro stripline elements can be used. The two branches with filters should meet immediately at the package leads of the port 1 and 6. Parasitic capacitances at these ports must be kept as small as possible. The mixer also can be driven with a source- and a load impedance different to 50, but performance will degrade at larger deviations. Note 2: Siemens Aktiengesellschaft Semiconductor Group 4 4 03.06.1998 1998-11-01 HL HF PE GaAs CMY 211 The LO-Buffer needs an external inductor L4 at port 4; the value of inductance depends on the LO frequency. It is tuned for minimum Iop consumption into port 4. Note 3: The LO Input impedance at Port 3 can be matched with a series inductor. It also can be tuned for a minimum current Iop into port 4. C3 is a DC blocking capacitor. Since the input impedance of port 3 can be slightly negative at lower frequencies, the source reflection coefficient should be kept below 0.8 ( Z0 = 50 ) within this frequency range. The Conversion Noise Figure Fssb is corresponding with the value of Conversion Loss Lc. The LO signal must be clean of noise and spurious at the frequencies fLO f IF. Siemens Aktiengesellschaft Semiconductor Group 5 5 03.06.1998 1998-11-01 HL HF PE GaAs CMY 211 Semiconductor Device Outline MW-6 Dim. A A1 A2 b b1 c D E |e| |e1| HE LE a q min. nom. max. 1.1 0.1 1.0 Gradient Remark 0.3 0.6 0.08 2.8 1.2 0.95 1.9 2.6 0.6 max 10 2...30 1 0.15 3.0 1.4 1. Applicable on all case top sides Siemens Aktiengesellschaft Semiconductor Group 6 6 03.06.1998 1998-11-01 HL HF PE GaAs CMY 211 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstrae 73, D-81541 Munchen. copyright Siemens AG 1996. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and cirucits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Siemens Aktiengesellschaft Semiconductor Group 7 7 03.06.1998 1998-11-01 HL HF PE GaAs |
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