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| BC 846PN NPN/PNP Silicon AF Transistor Array Preliminary data * For AF input stages and driver applivations * High current gain * Low collector-emitter saturation voltage * Two (galvanic) internal isolated NPN/PNP Transistors in one package Tape loading orientation PIN Configuration NPN-Transistor PNP-Transistor Type BC 846PN Marking 1Os Ordering Code Q627021=E 4=E 2=B 5=B 6=C 3=C Package SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 115C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 65 80 80 5 100 200 250 150 - 65 ... + 150 Unit V VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg mA mW C RthJA RthJS 275 140 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-27-1996 BC 846PN Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC Characteristics per Transistor Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 65 140 220 90 200 700 900 660 - V IC = 10 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 80 IC = 10 A, IB = 0 Collector-emitter breakdown voltage V(BR)CES 80 IC = 10 A, VBE = 0 Base-emitter breakdown voltage V(BR)EBO 5 IE = 10 A, IC = 0 Collector cutoff current ICBO 15 5 nA VCB = 30 V, IE = 0 , TA = 25 C VCB = 30 V, IE = 0 , TA = 150 C DC current gain hFE 110 450 - IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage 1) VCEsat 300 650 750 820 mV IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) VBEsat - IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage VBE 580 - IC = 10 mA, VCE = 5 V 1) Pulse test: t < 300s; D < 2% Semiconductor Group 2 Nov-27-1996 BC 846PN Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. AC Characteristics per Transistor Transition frequency Values typ. max. Unit fT 250 2 10 4.5 2 330 30 - MHz pF k 10-4 S - IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb Ceb - VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance h11e IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transfer ratio h12e IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transfer ratio h21e IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance h22e IC = 2 mA, VCE = 5 V, f = 1 kHz Semiconductor Group 3 Nov-27-1996 BC 846PN Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy 300 mW Ptot 200 TS TA 150 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load Ptotmax / PtotDC = f(tp) 10 3 10 3 K/W - RthJS 10 2 Ptotmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Nov-27-1996 BC 846PN Collector-base capacitance CCBO = f (VCBO) Transition frequency fT = f (IC) Emitter-base capacitance CEBO = f (VEBO) VCE = 5V Collectot cutoff current ICBO = f (TA) VCB = 30V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 Semiconductor Group 5 Nov-27-1996 BC 846PN DC current gain hFE = f (IC) VCE = 5V Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 h-parameter he = f (IC) VCE = 5V h parameter he = f (VCE) IC = 2mA Semiconductor Group 6 Nov-27-1996 |
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