![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572 A (Z) 2nd. Edition September 1997 Features * Build in Biasing Circuit; To reduce using parts cost & PC board space. * Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) * Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions. * Provide mini mold packages; MPAK-4(SOT-143mod) Outline * Note 1 Marking is "BW-". * Note 2 BB302M is individual type number of HITACHI BBFET. BB302M Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate1 to source voltage Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 -0 Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature 10 25 150 150 -55 to +150 V mA mW C C Unit V V 2 BB302M Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current I G1SS Gate2 to source cutoff current I G2SS Gate1 to source cutoff voltage VG1S(off) Gate2 to source cutoff voltage VG2S(off) Drain current I D(op) -- -- +100 nA V(BR)G2SS 10 -- -- V V(BR)G1SS +10 -- -- V Symbol V(BR)DSS Min 12 Typ -- Max -- Unit V Test Conditions I D = 200A VG1S = VG2S = 0 I G1 = +10A VG2S = VDS = 0 I G2 = 10A VG1S = VDS = 0 VG1S = +9V VG2S = VDS = 0 -- -- 100 nA VG2S = 9V VG1S = VDS = 0 0.4 -- 1.0 V VDS = 9V, VG2S = 6V I D = 100A 0.4 -- 1.0 V VDS = 9V, VG1S = 9V I D = 100A 9 13 18 mA VDS = 9V, VG1 = 9V VG2S = 6V RG = 120k Forward transfer admittance |yfs| 15 20 -- mS VDS = 9V, VG1 = 9V VG2S =6V RG = 120k, f = 1kHz Input capacitance Output capacitance c iss c oss 2.2 0.8 -- 22 3.0 1.1 0.017 26 4.0 1.5 0.04 -- pF pF pF dB VDS = 9V, VG1 = 9V VG2S =6V, RG = 120k f = 1MHz VDS = 9V, VG1 = 9V VG2S =6V Noise figure NF -- 1.7 2.2 dB RG = 120k f = 200MHz Reverse transfer capacitance c rss Power gain PG 3 BB302M Main Characteristics 4 BB302M 5 BB302M 6 BB302M 7 BB302M 8 BB302M 9 BB302M Sparameter (V DS = VG1 = 9V, VG2S = 6V, RG = 120k, Zo = 50) S11 f (MHz) MAG 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 0.988 0.986 0.979 0.964 0.948 0.939 0.920 0.904 0.885 0.864 0.848 0.826 0.808 0.789 0.773 0.755 0.735 0.721 0.703 0.677 ANG -5.2 -10.4 -16.0 -21.5 -26.9 -32.0 -37.3 -42.3 -47.1 -51.7 -56.5 -60.9 -65.0 -69.4 -73.7 -77.9 -82.1 -86.3 -90.7 -93.9 S21 MAG 2.13 2.13 2.12 2.08 2.04 2.00 1.95 1.91 1.86 1.81 1.76 1.70 1.66 1.61 1.56 1.51 1.47 1.42 1.39 1.34 ANG 174.1 167.9 161.6 155.2 149.1 143.0 137.3 131.5 125.7 120.1 115.1 110.1 104.7 100.3 95.4 90.5 85.9 81.3 76.9 72.4 S12 MAG 0.00052 0.00087 0.00156 0.00226 0.00254 0.00339 0.00335 0.00338 0.00351 0.00347 0.00355 0.00300 0.00289 0.00246 0.00211 0.00166 0.00165 0.00123 0.00176 0.00204 ANG 90.0 72.5 79.4 78.4 71.0 72.0 59.0 66.3 62.2 56.6 61.5 61.4 51.1 57.6 70.0 77.5 114.5 114.5 145.8 164.0 S22 MAG 0.985 0.993 0.992 0.990 0.987 0.985 0.982 0.978 0.974 0.970 0.966 0.961 0.957 0.952 0.947 0.943 0.937 0.933 0.927 0.923 ANG -1.3 -3.6 -5.5 -7.5 -9.6 -11.4 -13.3 -15.3 -17.1 -18.9 -21.0 -22.7 -24.5 -26.6 -28.3 -30.2 -32.2 -34.1 -35.9 -37.9 10 BB302M Package Dimensions Unit: mm 11 BB302M When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 12 |
Price & Availability of BB302M
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |