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BB201M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-713A (Z) 2nd. Edition Dec. 1998 Features
* Build in Biasing Circuit; To reduce useing parts cost & PC board space. * Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) * Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditins. * Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
Notes: 1. Marking is "AV-". 2. BB201M is individual type number of HITACHI BBFET.
BB201M
Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 -0 6 25 150 150 -55 to +150 Unit V V V mA mW C C
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol V(BR)DSS Min 6 +6 6 -- -- 0.2 0.4 10 16 1.2 0.7 -- 16 -- Typ -- -- -- -- -- 0.45 0.7 15 22 1.7 1.1 0.012 20 2.0 Max -- -- -- +100 100 0.8 1.0 20 -- 2.2 1.5 0.03 -- 3.0 Unit V V V nA nA V V mA mS pF pF pF dB dB Test Conditions I D = 200A, VG1S = VG2S = 0 I G1 = +10A, V G2S = VDS = 0 I G2 = 10A, VG1S = VDS = 0 VG1S = +5V, V G2S = VDS = 0 VG2S = 5V, VG1S = VDS = 0 VDS = 5V, VG2S = 4V I D = 100A VDS = 5V, VG1S = 5V I D = 100A VDS = 5V, VG1 = 5V, VG2S = 4V RG = 220k VDS = 5V, VG1 = 5V, VG2S =4V RG = 220k, f = 1kHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 220k f = 1MHz VDS = 5V, VG1 = 5V, VG2S =4V RG = 220k, f = 900MHz
Gate1 to source breakdown voltage V(BR)G1SS Gate2 to source breakdown voltage V(BR)G2SS Gate1 to cutoff current Gate2 to cutoff current Gate1 to source cutoff voltage Gate2 to source cutoff voltage Drain current Forward transfer admittance Input capacitance Output capacitance Reverse capacitance Power gain Noise figure I G1SS I G2SS VG1S(off) VG2S(off) I D(op) |yfs| c iss c oss c rss PG NF
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Main Characteristics
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Package Dimensions
Unit: mm
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Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
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