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| Silicon Switching Diodes BAS 79 A ... BAS 79 D Switching applications q High breakdown voltage q Common cathode q Type BAS 79 A BAS 79 B BAS 79 C BAS 79 D Marking BAS 79 A BAS 79 B BAS 79 C BAS 79 D Ordering Code (tape and reel) Q62702-A914 Q62702-A915 Q62702-A916 Q62702-A917 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol BAS 79 A Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 s Total power dissipation, TS = 114 C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Values BAS BAS 79 B 79 C 100 100 1 1 10 1.2 150 - 65 ... + 150 200 200 Unit BAS 79 D 400 400 A V VR VRM IF IFM IFS Ptot Tj Tstg 50 50 W C Rth JA Rth JS 170 30 K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAS 79 A ... BAS 79 D Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 A V(BR) BAS 79 A BAS 79 B BAS 79 C BAS 79 D VF - - IR - - - - 1 50 - - 1.6 2 A Values typ. max. Unit V 50 100 200 400 - - - - - - - - Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VR max VR = VR max, TA = 150 C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 measured at IR = 20 mA Test circuit for reverse recovery time CD trr - - 10 1 - - pF s Pulse generator: tp = 5 s, D = 0.05 tr = 0.6 ns, Rj = 50 Vp = VR + IF x Rj Oscillograph: R = 50 tr = 0.35 ns C 1 pF 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 BAS 79 A ... BAS 79 D Forward current IF = f (TA*; TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25 C Reverse current IR = f (TA) VCE = 10 V Semiconductor Group 3 |
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