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| AVD250 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI AVD250 is Designed for Class C, DME/TACAN Applications up to 1150 MHz. PACKAGE STYLE .400 2NL FLG A .0 2 5 x 4 5 2X B C F OD E 4 x .0 6 2 x 4 5 FEATURES: H G I J K P M D IM A M IN IM U M inches / m m * Internal Input/Output Matching Networks * PG = 6.2 dB at 250 W/1150 MHz * OmnigoldTM Metalization System L N M A X IM U M inches / m m .0 2 0 / 0 .5 1 .1 0 0 / 2 .5 4 .3 7 6 / 9 .5 5 .1 1 0 / 2 .7 9 .3 9 5 / 1 0 .0 3 .1 9 3 / 4 .9 0 .4 5 0 / 1 1 .4 3 .1 2 5 / 3 .1 8 .6 4 0 / 1 6 .2 6 .8 9 0 / 2 2 .6 1 .3 9 5 / 1 0 .0 3 .0 0 4 / 0 .1 0 .0 5 2 / 1 .3 2 .1 1 8 / 3 .0 0 .0 3 0 / 0 .7 6 MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC 17.8 A 55 V 600 W @ TC 80 C -65 C to +250 C -65 C to +200 C 0.2 C/W B C D E F G H I J K L M N P .3 9 6 / 1 0 .0 6 .1 3 0 / 3 .3 0 .4 0 7 / 1 0 .3 4 .6 6 0 / 1 6 .7 6 .9 1 0 / 2 3 .1 1 .4 1 5 / 1 0 .5 4 .0 0 7 / 0 .1 8 .0 7 2 / 1 .8 3 .1 3 1 / 3 .3 3 .2 3 0 / 5 .8 4 ORDER CODE: ASI10565 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICES hFE PG C IC = 10 mA IC = 25 mA IE = 1.0 mA VCE = 50 V VCE = 5.0 V VCC = 50 V TC = 25 C NONETEST CONDITIONS RBE = 10 MINIMUM TYPICAL MAXIMUM 65 65 3.5 25 UNITS V V V mA --dB % IC = 1.0 A POUT = 250 W f = 1025 - 1150 MHz 15 6.2 40 120 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1 |
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