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QRMM0010 QUALIFICATION REPORT
M36DR864CB/DB: 64 Mbit (x16, Burst) Flash Memory and 8 Mbit (x16) SRAM, 1.8V Multiple Memory Product
INTRODUCTION The M36DR864CB/DB is a Multiple Memory Product which combines two memory technologies: a 64 Mbit 1.8V supply Flash memory and an 8 Mbit 1.8V supply Asynchronous SRAM. The Flash and SRAM components have separate power supplies and grounds and are distinguished by three chip enable inputs. The Flash memory component is the ST's M58CR064C/D that features a Dual Bank, Burst architecture. It is manufactured with the ST advanced CMOS 0.15 micron process which has been specially developed for Flash memory products. The memory features a fast access time, low power consumption in all operations and an endurance of 100,000 Program/Erase cycles per block. The SRAM component features a fully static operation and a low power standby. It is manufactured by CYPRESS with a 0.16 micron process technology. Qualification Report History - May 2003 - Stacked LFBGA66 12x8mm package, ANAM assy line. ST recognizes that the quality of a product must be built-in during the design, material procurement, manufacturing and testing. Also that the reliability must be demonstrated before the product is released for full mass production. The qualification of new products and the certification of new processes is a rigorous task undertaken by Quality and Reliability professionals, to ensure stable products and processes capable of fully meeting customer requirements. A key step of this activity is the Design Review where ST assures that, - adequate and realistic product specifications have been developed; - design and layout rules, as documented in the Design Rules Manual, have been respected; - critical performance parameters and process variables have been identified; - previously untested design techniques or manufacturing processes are recognized; - manufacturability concerns are identified; - comprehensive and efficient qualification programs are defined. Product Qualification is made on all new products and new packages. Qualification is also remade on existing products when there are major changes to the design or manufacturing. The tests performed are tailored to the parameters affected by the major change or the combination of new die or new package to be evaluated. The results of the tests for this Flash memory are on the attached pages of this qualification report.
Manager of Flash Memory Quality Control & Reliability Flavia REDAELLI
July 2003
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QRMM0010 QUALIFICATION REPORT - M36DR864CB/DB 0.15m Technology
Table 1. Stacked LFBGA66 (12 x 8mm) - Package Related Tests, Amkor Assembly Line
Subgroup 1 Test Procedure MIL-STD-883 Procedure 2016 Results Test Conditions Lots 1 1 Samp. 5 5 Fail 0 0 Note
Physical Dimensions Coplanarity LFBGA Package
2 3 4 5
Bond Strength Die Attach Strength Radiography Internal Visual and Mechanical Resistance to Surface Mounting LFBGA Package
2011 2019 or 2027 2012 2014
1 1 1 1
5 5 15 5
0 0 0 0
6
(Note 1)
MSL 3
1
15
0
Note: 1. Preconditioning specification: JEDEC 020B. Test performed using 260C peak reflow.
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QRMM0010 QUALIFICATION REPORT - M36DR864CB/DB 0.15m Technology
Table 2. Stacked LFBGA66 (12 x 8mm) - Die/Package Related Tests (Amkor)
Subgroup 1 Test Procedure Operating Life Test MIL-STD-883 Procedure 1005 Results Test Conditions Lots 125C, VCC = 2.6V, - 168 hrs - 500 hrs 150C - 168 hrs - 500 hrs - 1000 hrs 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Samp. 75 75 60 60 60 60 60 60 60 60 60 60 60 60 Fail 1 0 0 0 0 0 1 0 0 0 1 0 0 0 1 0 0 0 Note
2
Retention Bake
1008
3
Temperature, Humidity, Bias
CECC 90,000 85C, RH = 85%, VCC = 2.2V - 168 hrs - 500 hrs - 1000 hrs 1010C -40 to 150C, - 100 cycles - 500 cycles - 1000 cycles 121C, 2 Atm, RH = 100% - 96 hrs - 168 hrs - 240 hrs
4
Temperature Cycling
5
Pressure Pot
Note: 1. Samples previously submitted to preconditioning flow MSL3 for surface Mounting devices according to JEDEC 020B. Test performed using 260C peak reflow.
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QRMM0010 QUALIFICATION REPORT - M36DR864CB/DB 0.15m Technology
If you have any questions or suggestion concerning the matters raised in this document please send them to the following electronic mail address:
ask.memory@st.com
(for general enquiries)
Please remember to include your name, company, location, telephone number and fax number.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China -Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States www.st.com
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