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| (R) STN851 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Ordering Code STN851 s Marking N851 Shipment Tape & Reel s s s VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN CHARACTERISTIC FAST-SWITCHING SPEED SURFACE-MOUNTING SOT-223 MEDIUM POWER PACKAGE IN TAPE & REEL 2 1 SOT-223 2 3 APPLICATIONS: EMERGENCY LIGHTING s VOLTAGE REGULATORS s RELAY DRIVERS s HIGH EFFICIENCY LOW VOLTAGE SWITCHING APPLICATIONS s DESCRIPTION The device is manufactured in NPN Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T amb = 25 C Storage Temperature Max. Operating Junction Temperature o Value 150 60 7 5 10 1 2 1.6 -65 to 150 150 Unit V V V A A A A W o o C C March 2003 1/4 STN851 THERMAL DATA R thj-amb Thermal Resistance Junction-ambient 2 Max 78 o C/W * Device mounted on a P.C.B. area of 1 cm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO I EBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 120 V V CB = 120 V V EB = 7 V I C = 100 A 150 T j = 100 o C Min. Typ. Max. 50 1 10 Unit nA A nA V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage I C = 10 mA 60 V I E = 100 A 7 V V CE(sat) IC IC IC IC = = = = 100 mA 1A 2A 5A I B = 5 mA I B = 50 mA I B = 50 mA I B = 200 mA I B = 200 mA V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V I C = 100 mA f = 1 MHz 150 150 90 30 10 70 140 320 1 0.89 300 270 140 50 130 50 50 120 250 500 1.15 1 mV mV mV mV V V V BE(sat) V BE(on) h FE Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain IC = 4 A IC = 4 A IC IC IC IC = = = = 10 mA 2A 5A 10 A 350 fT C CBO Transition frequency Collector-Base Capacitance RESISTIVE LOAD Turn- on Time Storage Time Fall Time V CE = 10 V V CB = 10 V MHz pF t on ts tf IC = 1 A I B1 = - I B2 = 0.1 A V CC = 10 V 50 1.35 120 ns s ns * Pulsed: Pulse duration = 300s, duty cycle = 1.5 % 2/4 STN851 SOT-223 MECHANICAL DATA mm MIN. A B B1 c D e e1 E H V A1 0.02 3.30 6.70 0.60 2.90 0.24 6.30 0.70 3.00 0.26 6.50 2.30 4.60 3.50 7.00 3.70 7.30 10o 0.130 0.264 TYP. MAX. 1.80 0.80 3.10 0.32 6.70 0.024 0.114 0.009 0.248 0.027 0.118 0.010 0.256 0.090 0.181 0.138 0.276 0.146 0.287 10o MIN. inch TYP. MAX. 0.071 0.031 0.122 0.013 0.264 DIM. P008B 3/4 STN851 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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